Seme LAB BUX12 Silicon multi-epitaxial npn transistor Datasheet

SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUX12
•
High Current Capability.
•
Hermetic TO3 Metal package.
•
Ideally suited for Motor Control, Switching
and Linear Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
VCEX
VCEO
VEBO
IC
ICM
IB
PD
TJ
Tstg
Collector – Base Voltage
VBE = -1.5V
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
tp = 10ms
Peak Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
300V
300V
250V
7V
20A
25A
4A
110W
0.63W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
Units
1.59
°C/W
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8172
Issue 1
Page 1 of 3
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUX12
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
ICEO
Collector Cut-Off Current
VCE = 200V
IB = 0
1.5
ICEX
Collector Cut-Off Current
VCE = 300V
VBE = -1.5V
1.5
IEBO
Emitter Cut-Off Current
VEB = 5V
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
IC = 10mA
250
IE = 1.0mA
7
(1)
V(BR)CEO
V(BR)EBO
(1)
VCE(sat)
VBE(sat)
hFE
(1)
(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Forward-current transfer
ratio
Min.
Typ
TC = 125°C
Max.
Units
mA
6
IC = 0
1.0
IC = 5A
IB = 0.5A
1.0
IC = 10A
IB = 1.25A
1.5
IC = 10A
IB = 1.25A
1.5
IC = 5A
VCE = 4V
20
IC = 10A
VCE = 4V
10
IC = 1.0A
VCE = 15V
V
60
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
ton
Turn-On Time
ts
Storage Time
IC = 10A
tf
Fall Time
IB1 = -IB2 = 1.25A
8
MHz
f = 10MHz
IC = 10A
VCC = 150V
IB1 = 1.25A
VCC = 150V
1.0
µs
2
0.5
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8172
Issue 1
Page 2 of 3
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUX12
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
6.35 (0.25)
9.15 (0.36)
2
22.23
(0.875)
max.
1
1.52 (0.06)
3.43 (0.135)
0.97 (0.060)
1.10 (0.043)
16.64 (0.655)
17.15 (0.675)
29.9 (1.177)
30.4 (1.197)
38.61 (1.52)
39.12 (1.54)
10.67 (0.42)
11.18 (0.44)
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO3 (TO-204AA) METAL PACKAGE
Underside View
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8172
Issue 1
Page 3 of 3
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