LIGITEK LSD505-61-XX-RP20 Single digit led display (0.50 inch) Datasheet

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
SINGLE DIGIT LED DISPLAY (0.50 Inch)
LSD505/61-XX/RP20
DATA SHEET
DOC. NO
:
QW0905- LSD505/61-XX/RP20
REV.
:
A
DATE
: 22 - Nov. - 2005
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/7
PART NO. LSD505/61-XX/RP20
Package Dimensions
12.7
(0.50")
12.7
(0.50")
8.0
(0.315")
19.0
(0.748")
ψ1.5(0.059")
LSD505/61-XX/RP20
LIGITEK
Ø 0.51
TYP
20±0.5
2.45X4=9.8
(0.386")
PIN NO.1
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25(0.01") unless otherwise noted.
2.Specifications are subject to change without notice.
15.24
(0.60")
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Property of Ligitek Only
Page 2/7
PART NO. LSD505/61-XX/RP20
Internal Circuit Diagram
LSD5051-XX/RP20
3,8
A
7
B C D E
6
4
2
1
F
G DP
9 10 5
LSD5061-XX/RP20
3,8
A
7
B C D E
6
4
2
1
F
G DP
9 10 5
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Property of Ligitek Only
Page 3/7
PART NO. LSD505/61-XX/RP20
Electrical Connection
PIN NO.
LSD5051-XX/RP20
PIN NO.
LSD5061-XX/RP20
1
Anode E
1
Cathode E
2
Anode D
2
Cathode D
3
Common Cathode
3
Common Anode
4
Anode C
4
Cathode C
5
Anode DP
5
Cathode DP
6
Anode B
6
Cathode B
7
Anode A
7
Cathode A
8
Common Cathode
8
Common Anode
9
Anode F
9
Cathode F
10
Anode G
10
Cathode G
LIGITEK ELECTRONICS CO.,LTD.
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Page 4/7
PART NO. LSD505/61-XX/RP20
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
H
Forward Current Per Chip
IF
15
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
60
mA
Power Dissipation Per Chip
PD
40
mW
Ir
10
μA
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Reverse Current Per Any Chip
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
common
cathode
or
anode
Material Emitted
CHIP
PART NO
λP
(nm)
△λ
Vf(v)
(nm)
Iv(mcd)
IV-M
Min. Typ. Max. Min. Typ.
Common
Cathode
LSD5051-XX/RP20
GaP
LSD5061-XX/RP20
Electrical
697
Red
90
1.7
2.1
Common
Anode
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ± 15% testing tolerance.
2.6
0.35
0.5
2:1
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Property of Ligitek Only
Page 5/7
PART NO. LSD505/61-XX/RP20
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
Peak Wavelength
λP
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
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Page 6/7
PART NO. LSD505/61-XX/RP20
Typical Electro-Optical Characteristics Curve
H CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
1.0
2.0
3.0
4.0
5.0
1.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
600
700
800
900
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
1000
80
100
LIGITEK ELECTRONICS CO.,LTD.
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Page 7/7
PART NO. LSD505/61-XX/RP20
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95 %
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11
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