Infineon IPD50N06S3-15 Optimos-t power-transistor Datasheet

IPD50N06S3-15
OptiMOS®-T Power-Transistor
Product Summary
V DS
55
V
R DS(on),max
15
mΩ
ID
50
A
Features
• N-channel - Normal Level - Enhancement mode
• Automotive AEC Q101 qualified
PG-TO252-3-11
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPD50N06S3-15
PG-TO252-3-11
3N0615
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Value
50
Unit
A
35
Pulsed drain current2)
I D,pulse
T C=25 °C
200
Avalanche energy, single pulse2)
E AS
I D=25 A
130
mJ
Avalanche current, single pulse
I AS
50
A
Gate source voltage3)
V GS
±20
V
Power dissipation
P tot
65
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.2
55/175/56
page 1
2009-05-20
IPD50N06S3-15
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
-
2.3
minimal footprint
-
-
62
6 cm2 cooling area4)
-
-
40
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=30 µA
2.1
3.0
4
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1
-
1
100
V DS=55 V, V GS=0 V,
T j=125 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
RDS(on)
V GS=10 V, I D=25 A
-
13
15
mΩ
Rev. 1.2
page 2
2009-05-20
IPD50N06S3-15
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
2980
3400
-
450
675
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
430
645
Turn-on delay time
t d(on)
-
24
-
Rise time
tr
-
59
-
Turn-off delay time
t d(off)
-
24
-
Fall time
tf
-
67
-
Gate to source charge
Q gs
-
24
32
Gate to drain charge
Q gd
-
10
15
Gate charge total
Qg
-
43
50
Gate plateau voltage
V plateau
-
7.5
-
V
-
-
50
A
-
-
200
-
0.9
1.3
V
-
20
-
ns
-
25
-
nC
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=27.5 V,
V GS=10 V, I D=50 A,
R G=18 Ω
pF
ns
Gate Charge Characteristics2)
V DD=11 V, I D=50 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
Reverse recovery time2)
t rr
Reverse recovery charge2)
Q rr
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
V R=27.5 V, I F=I S,
di F/dt =100 A/µs
1)
Current is limited by bondwire; with an R thJC = 2.0 K/W the chip is able to carry 52 A at 25°C. For detailed
information see Application Note ANPS071E.
2)
Defined by design. Not subject to production test.
3)
Qualified at -5V and +20V
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.2
page 3
2009-05-20
IPD50N06S3-15
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
70
60
60
50
50
40
I D [A]
P tot [W]
40
30
30
20
20
10
10
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
0.5
0
1 µs
10
100
0.1
Z thJC [K/W]
10 µs
I D [A]
100 µs
1 ms
10-1
0.05
0.01
10
10-2
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.2
10-7
page 4
2009-05-20
IPD50N06S3-15
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
parameter: V GS
100
200
20 V
5V
12 V
6V
9V
8V
7V
90
160
80
10 V
70
R DS(on) [mΩ]
I D [A]
120
9V
80
8V
40
60
50
40
7V
30
6V
20
10 V
5V
0
10
0
2
4
6
8
0
10
20
40
V DS [V]
60
80
100
120
140
180
I D [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6 V
R DS(on) = f(T j); I D = 50 A; V GS = 10 V
parameter: T j
200
24
150
20
I D [A]
25 °C
100
175 °C
R DS(on) [mΩ]
-55 °C
50
12
0
8
0
2
4
6
8
10
V GS [V]
Rev. 1.2
16
-60
-20
20
60
100
T j [°C]
page 5
2009-05-20
IPD50N06S3-15
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
104
4
3.5
Ciss
300µA
Coss
30µA
C [pF]
V GS(th) [V]
3
2.5
Crss
103
2
1.5
102
1
-60
-20
20
60
100
140
0
180
5
10
T j [°C]
15
25
V DS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
IF = f(VSD)
I AV = f(t AV)
parameter: T j
parameter: T j(start)
100
103
100°C
150°C
2
I F [A]
I AV [A]
10
101
175 °C
25 °C
0.6
0.8
100
25°C
10
1
0
0.2
0.4
1
1.2
1.4
V SD [V]
Rev. 1.2
20
0.1
1
10
100
1000
t AV [µs]
page 6
2009-05-20
IPD50N06S3-15
13 Typical avalanche Energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
65
280
12.5 A
240
60
V BR(DSS) [V]
E AS [mJ]
200
160
25 A
120
80
55
50
50 A
40
45
0
0
50
100
150
-60
200
-20
20
60
100
140
180
T j [°C]
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 50 A pulsed
parameter: V DD
12
V GS
11 V
44 V
Qg
10
V GS [V]
8
V plateau
6
V g s(th)
4
2
Q g (th)
Q sw
Q gs
0
0
10
20
30
40
50
60
70
Q gate
Q gd
80
Q gate [nC]
Rev. 1.2
page 7
2009-05-20
IPD50N06S3-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2009
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.2
page 8
2009-05-20
IPD50N06S3-15
Revision History
Version
Changes
Date
Data Sheet version 1.1
Removal of feature: ultra low
04.10.2007 Rdson
Data Sheet version 1.1
Implementation of avalanche
04.10.2007 current single pulse
Data Sheet version 1.1
04.10.2007 Update of package drawing
Data Sheet version 1.1
Update of avalanche diagram 12
07.11.2007 and 13
Data Sheet version 1.1
implementation of footnote 2 for
07.11.2007 Eas specification
Data Sheet version 1.2
Correction of marking and update
20.05.2009 of disclaimer
Rev. 1.2
page 9
2009-05-20
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