INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICP Collector Current-Pulse 4 A PC Collector Power Dissipation Ta=25℃ 1.75 W PC Collector Power Dissipation TC=25℃ 20 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat)-1* Collector-Emitter Saturation Voltage VCE(sat)-2* MAX UNIT IC= 2A; IB= 8mA 2.0 V Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA 3.0 V VBE(sat)* Base-Emitter Saturation Voltage IC= 4A; IB= 40mA 4.0 V VBE(on)* Base-Emitter On Voltage IC= 2A; VCE= 3V 2.8 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 ICBO Collector Cutoff Current VCB= 50V; IE= 0 20 uA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2 mA hFE-1* DC Current Gain IC= 0.5A; VCE= 3V 500 hFE-2* DC Current Gain IC= 2A; VCE= 3V 1K hFE-3* DC Current Gain IC= 4A; VCE=3V 200 COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 100 pF Current-Gain—Bandwidth Product IC= 0.75A; VCE= 10V 25 MHz fT CONDITIONS MIN TYP. 100 V 12K *:Pulse test PW≤300us,duty cycle≤2% isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 Outline Drawing isc website：www.iscsemi.com 3 isc & iscsemi is registered trademark