ADVANCED INFORMATION ADVANCED INFORMATION MMBT4401 SMALL SIGNAL TRANSISTORS (NPN) SOT-23 FEATURES ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) Top View ¨ As complementary type, the PNP transistor MMBT4403 is recommended. .056 (1.43) .052 (1.33) 3 1 .016 (0.4) .045 (1.15) .037 (0.95) .007 (0.175) .005 (0.125) max. .004 (0.1) 2 .037(0.95) .037(0.95) .016 (0.4) ¨ This transistor is also available in the TO-92 case with the type designation 2N4401. .102 (2.6) .094 (2.4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking code: 2X Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 Volts Collector-Emitter Voltage VCEO 40 Volts Emitter-Base Voltage VEBO 6.0 Volts IC 600 mA Power Dissipation FR-5 Board,* TA=25°C Derate above 25°C Ptot 225 1.8 mW mW/°C Power Dissipation Alumina Substrate,** TA=25°C Derate above 25°C Ptot 300 2.4 mW mW/°C RQJA 556 417 °C/W Junction Temperature Tj 150 ¡C Storage Temperature Range TS Ð55 to +150 ¡C Collector Current-Continuous Thermal Resistance, Junction to Ambient *FR-5 = 1.0 x 0.75 x 0.062 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2/18/99 FR-5 Board Alumina Substrate MMBT4401 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. Collector-Base Breakdown Voltage at IC = 0.1 mA, IE = 0 V(BR)CBO 60 Ð Volts Collector-Emitter Breakdown Voltage(1) at IC = 1 mA, IB = 0 V(BR)CEO 40 Ð Volts Emitter-Base Breakdown Voltage at IE = 0.1 mA, IC = 0 V(BR)EBO 6.0 Ð Volts Collector-Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA VCEsat VCEsat Ð Ð 0.40 0.75 Volts Volts Base-Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA VBEsat VBEsat 0.75 Ð 0.95 1.20 Volts Volts Collector Cutoff Current at VEB = 0.4 V, VCE = 35 V ICEX Ð 100 nA Base Cutoff Current at VEB = 0.4 V, VCE = 35 V IBEV Ð 100 nA hFE hFE hFE hFE hFE 20 40 80 100 40 Ð Ð Ð 300 Ð Ð Ð Ð Ð Ð Input Impedance at VCE = 10 V, IC = 1 mA, f = 1 kHz hie 1 15 kW Voltage Feedback Ratio at VCE = 10 V, IC = 1 mA, f = 1 kHz hre 0.1 ¥ 10-4 8 ¥ 10-4 Ð Current Gain-Bandwidth Product at VCE = 10 V, IC = 20 mA, f = 100 MHz fT 250 Ð MHz Collector-Base Capacitance at VCB = 5 V,f = 1 MHz, IE=0 CCBO Ð 6.5 pF Emitter-Base Capacitance at VEB = 0.5 V,f = 1 MHz, IC=0 CEBO Ð 30 pF DC Current Gain at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 2 V, IC = 0.1 mA 1 mA 10 mA 150 mA(1) 500 mA(1) NOTES: (1) Pulse test: pulse width ²300ms, cycle ² 2.0% MAX. UNIT MMBT4401 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz hfe 40 500 Ð Output Admittance at VCE = 10 V, IC = 1 mA, f = 1 kHz hoe 1.0 30 mS Delay Time (see Fig. 1) at IB1 = 15 mA, IC = 150 mA VCC = 30 V, VBE = 40 V td Ð 15 ns Rise Time (see Fig. 1) at IB1 = 15 mA, IC = 150 mA VCC = 30 V, VBE = 40 V tr Ð 20 ns ts Ð 225 ns tf Ð 30 ns Storage Time (see Fig. 2) at IB1 = IB2 = 15 mA, IC = 150 mA VCC = 30 V, IC = 150 mA Fall Time (see Fig. 2) at IB1 = IB2 = 15 mA, IC = 150 mA VCC = 30 V, IC = 150 mA SWITCHING TIME EQUIVALENT TEST CIRCUIT FIGURE 1 - TURN-ON TIME 1.0 to 100 ms, DUTY CYCLE Å 2% FIGURE 2 - TURN-OFF TIME +30V 1.0 to 100 ms, DUTY CYCLE Å 2% 200W +30V 200W +16 V +16 V 0 0 1kW -2 V < 2 ns C S* < 10 pF Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope C S* < 10 pF 1kW -14 V < 20 ns -4 V