Microsemi APTGL30X120T3G 3 phase bridge trench field stop igbt4 power module Datasheet

APTGL30X120T3G
3 Phase bridge
Trench + Field Stop IGBT4
Power Module
15
VCES = 1200V
IC = 30A @ Tc = 80°C
Application
• Motor control
31
16
23
19
29
14
25
20
30
18
11
10
22
8
4
7
3
28
R1
13
12
2
It is recommended to connect a decoupling capacitor
between pins 31 & 2 to reduce switching overvoltages, if DC
Power is connected between pins 15, 16 & 12.
Pins 15 & 16 must be shorted together.
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
Features
• Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
- Low tail current
- Soft recovery parallel diodes
- Low diode VF
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• RoHS compliant
Absolute maximum ratings
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
TC = 25°C
Reverse Bias Safe Operating Area
Tj = 150°C
50A @ 1100V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
March, 2009
IC
Max ratings
1200
45
30
50
±20
170
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
APTGL30X120T3G – Rev 0
Symbol
VCES
APTGL30X120T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 25A
Tj = 150°C
VGE = VCE , IC = 0.8mA
VGE = 20V, VCE = 0V
Typ
5.0
1.85
2.25
5.8
Min
Typ
Max
Unit
250
2.25
µA
6.5
400
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
QG
Gate charge
Td(on)
Tr
Td(off)
Tf
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE= ±15V ; VCE=600V
IC=25A
Inductive Switching (25°C)
VGE = ±15V
VCE = 600V
IC = 25A
RG = 20Ω
Inductive Switching (150°C)
VGE = ±15V
VCE = 600V
IC = 25A
RG = 20Ω
TJ = 25°C
VGE = ±15V
VCE = 600V
TJ = 150°C
IC = 25A
TJ = 25°C
RG = 20Ω
TJ = 150°C
VGE ≤15V ; VBus = 900V
tp ≤10µs ; Tj = 150°C
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
1430
115
85
pF
0.2
µC
130
20
300
ns
45
150
35
350
80
2
3
1.5
2.2
ns
mJ
mJ
100
A
Reverse diode ratings and characteristics
IRM
Min
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Typ
Max
1200
VR=1200V
IF = 25A
IF = 50A
IF = 25A
IF = 25A
VR = 667V
di/dt =200A/µs
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V
Tj = 25°C
Tj = 150°C
Tc = 80°C
Unit
100
500
Tj = 125°C
Tj = 25°C
25
2.6
3.2
1.8
320
Tj = 125°C
Tj = 25°C
Tj = 125°C
360
480
1800
µA
A
3.1
V
March, 2009
VRRM
Test Conditions
Maximum Peak Repetitive Reverse Voltage
ns
nC
2-5
APTGL30X120T3G – Rev 0
Symbol Characteristic
APTGL30X120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
Min
Typ
Max
0.9
1.4
Unit
T25 = 298.15 K
TC=100°C
RT =
R25
T: Thermistor temperature
1 ⎞⎤ RT: Thermistor value at T
⎡
⎛ 1
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
⎝ T25 T ⎠⎦
⎣
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
2.5
°C/W
V
175
125
100
4.7
110
°C
N.m
g
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGL30X120T3G – Rev 0
28
17
1
March, 2009
SP3 Package outline (dimensions in mm)
APTGL30X120T3G
Typical Performance Curve
Output Characteristics (VGE=15V)
50
Output Characteristics
50
TJ = 150°C
40
TJ=25°C
30
VGE=19V
30
TJ=150°C
IC (A)
IC (A)
40
20
10
VGE=15V
20
VGE=9V
10
0
0
0
1
2
VCE (V)
3
4
0
Transfert Characteristics
50
VCE = 600V
VGE = 15V
RG = 20 Ω
TJ = 150°C
30
6
E (mJ)
IC (A)
TJ=25°C
8
20
4
Eon
4
2
0
0
5
6
7
8
9
10
11
12
0
13
10
20
30
40
50
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
6
60
VCE = 600V
VGE =15V
IC = 25A
TJ = 150°C
4
50
Eon
40
3
IC (A)
5
E (mJ)
3
Eoff
TJ=150°C
10
2
VCE (V)
Energy losses vs Collector Current
10
40
1
Eoff
30
2
20
1
10
0
VGE=15V
TJ=150°C
RG=20 Ω
0
0
20
40
60
Gate Resistance (ohms)
80
0
300
600
900
VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
IGBT
0.9
March, 2009
0.8
0.7
0.6
0.5
0.4
0.2
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGL30X120T3G – Rev 0
Thermal Impedance (°C/W)
1
APTGL30X120T3G
Forward Characteristic of diode
60
VCE=600V
D=50%
RG=20 Ω
TJ=150°C
Tc=75°C
60
TJ=125°C
50
40
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
80
40
30
TJ=25°C
20
20
Hard
switching
10
0
0
0
10
20
30
40
0.0
50
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VF (V)
IC (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.6
1.4
1.2
1
0.8
0.6
Diode
0.9
0.7
0.5
0.3
0.4
0.2
0
0.00001
Single Pulse
0.1
0.05
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGL30X120T3G – Rev 0
March, 2009
rectangular Pulse Duration (Seconds)
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