IXYS IXFL70N60Q2 Hiperfet power mosfet q2-class Datasheet

IXFL70N60Q2
HiPerFETTM Power
MOSFET Q2-Class
VDSS =
ID25 =
RDS(on) ≤
≤
trr
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic RG
High dV/dt, Low trr
600V
37A
Ω
92mΩ
250ns
ISOPLUS264
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
600
600
V
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
37
280
A
A
IA
EAS
TC = 25°C
TC = 25°C
35
5
A
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
360
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
260
°C
°C
40..120 / 9..27
N/lb.
2500
3000
V~
V~
z
8
g
z
TL
TSOLD
1.6 mm (0.063 in.) from Case for 10s
Plastic body for 10s
FC
Mounting Force
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Weight
G
D
ISOLATED TAB
S
G = Gate
S = Source
D = Drain
Features
z
z
z
z
z
z
z
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V Electrical Isolation
Fast Intrinsic Diode
Avalanche Rated
Low QG
Low Package Inductance
Advantages
z
High Power Density
Easy to Mount
Space Savings
Applications
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0 V, ID = 1mA
600
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
VGS = ±30 V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 35A, Note 1
TJ = 125°C
© 2009 IXYS CORPORATION, All Rights Reserved
z
z
V
z
5.5
V
z
± 200
nA
z
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
100 μA
5 mA
92 mΩ
DS100068A(06/09)
IXFL70N60Q2
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
36
VDS = 10V, ID = 35A, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 35A
RG = 1Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 35A
Qgd
ISOPLUS264TM (IXFL) Outline
50
S
12
nF
1340
pF
345
pF
26
ns
25
ns
60
ns
12
ns
265
nC
57
nC
120
nC
Note: Bottom heatsink meets
0.35 °C/W
RthJC
RthCS
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Characteristic Values
Min.
Typ.
Max.
70
A
Repetitive, Pulse Width Limited by TJM
280
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
IF = 25A, VGS = 0V
-di/dt = 100 A/μs
VR = 100 V
250
ns
QRM
IRM
1.2
8.0
Ref: IXYS CO 0128
μC
A
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFL70N60Q2
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
70
140
VGS = 10V
7V
60
50
7V
100
6V
I D - Amperes
I D - Amperes
VGS = 10V
120
40
30
20
80
6V
60
40
5V
10
20
0
0
0
1
2
3
4
5
6
5V
0
7
2
4
6
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
16
18
20
Junction Temperature
3.0
VGS = 10V
7V
2.6
RD S (on) - Normalized
60
I D - Amperes
14
Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs.
70
6V
50
40
5V
30
20
VGS = 10V
2.2
I D = 70A
1.8
I D = 35A
1.4
1.0
0.6
10
0.2
-50
0
0
2
4
6
8
10
12
14
16
-25
0
25
50
75
100
125
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to 0.5 I D25 Value vs. I D
Fig. 6. Drain Current vs. Case Temperature
2.8
150
40
2.6
VGS = 1 0V
35
T J = 1 25ºC
2.4
30
2.2
I D - Amperes
RD S (on) - Normalized
8
10
12
VDS - Volts
2.0
1.8
1.6
1.4
1.2
20
15
10
T J = 25ºC
1.0
25
5
0.8
0.6
0
20
40
60
I
D
80
- Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
100
120
140
0
-50
-25
0
25
50
75
100
T C - Degrees Centigrade
125
150
IXFL70N60Q2
Fig. 8. Transconductance
100
100
90
90
80
80
70
70
gf s - Siemens
I D - Amperes
Fig. 7. Input Admittance
T J = 1 25ºC
60
25ºC
50
- 40ºC
40
T J = - 40ºC
25ºC
60
1 25ºC
50
40
30
30
20
20
10
10
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
6.5
10
20
30
V GS - Volts
Fig. 9. Source Current vs. Source-To-Drain
Voltage
D
50
60
70
80
90
100
- Amperes
Fig. 10. Gate Charge
140
10
9
120
VD S = 300V
I D = 35A
I G = 10mA
8
100
7
VG S - Volts
I S - Amperes
40
I
80
60
5
4
3
T J = 1 25ºC
40
6
2
T J = 25ºC
20
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
1.2
40
80
Q
V SD - Volts
120
G
160
200
240
280
- nanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
1.000
100000
Ciss
Z(th)JC - ºC / W
Capacitance - pF
f = 1 MHz
10000
Coss
1000
0.100
Crss
100
0
5
10
15
20
25
30
35
40
V DS - Volts
0.010
1
10
100
1000
Pulse Width - millisecond
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F _70N60Q2(95)5-28-08-A
Similar pages