ADPOW ARF1519 Rf power mosfet Datasheet

ARF1519
D
ARF1519
BeO
104T-100
G
RF POWER MOSFET
S
N - CHANNEL ENHANCEMENT MODE
250V
750W
25MHz
The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF
power generator and amplifier applications up to 25 MHz.
• Specified 250 Volt, 13.56 MHz Characteristics:
•
Output Power = 750 Watts.
•
Gain = 17dB (Class C)
•
Efficiency > 75%
• High Performance Power RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
ARF1519
UNIT
1000
Volts
20
Amps
VGS
Gate-Source Voltage
±30
Volts
PD
Total Device Dissipation @ TC = 25°C
1350
Watts
TJ,TSTG
TL
-55 to 200
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
VDS(ON)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 300µA)
1000
On State Drain Voltage
1
(ID(ON) = 10A, VGS = 10V)
TYP
MAX
5
7
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
300
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
3000
IGSS
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±600
g fs
Forward Transconductance (VDS = 15V, ID = 10A)
IDSS
V isolation
RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)
VGS(TH)
Gate Threshold Voltage (VDS = VGS, ID = 6mA)
3
14
UNIT
Volts
µA
nA
mhos
2500
Volts
2
4
Volts
MAX
UNIT
Characteristic (per package unless otherwise noted)
RθJC
Junction to Case
RθCS
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
0.13
0.09
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
°C/W
050-4935 Rev A
Symbol
5-2005
THERMAL CHARACTERISTICS
ARF1519
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
4600
5600
VDS = 150V
310
350
f = 1 MHz
90
120
MAX
Test Conditions
C iss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS = 0V
UNIT
pF
FUNCTIONAL CHARACTERISTICS
Symbol
GPS
η
ψ
Characteristic
Common Source Amplifier Power Gain
Test Conditions
MIN
TYP
f = 13.56MHz
17
20
dB
70
75
%
VGS = 0V
Drain Efficiency
Electrical Ruggedness VSWR 10:1
VDD = 200V
Pout = 750W
No Degradation in Output Power
1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
60
20,000
CAPACITANCE (pf)
Ciss
1000
Coss
100
Crss
050-4935 Rev A
5-2005
10
.1
1
10
100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
ID, DRAIN CURRENT (AMPERES)
10,000
50
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
40
30
20
10
0
0
UNIT
TJ = +25°C
TJ = +125°C
1
2
3
4
5
6
7
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Transfer Characteristics
1.2
ARF1519
50
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
45
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 3, Typical Threshold Voltage vs Temperature
6.5V
6V
40
35
30
5.5V
25
20
5V
15
10
4.5V
5
4V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Output Characteristics
0.2
D=0.5
0.05
0.2
0.1
0.01
0.05
0.005
0.02
Note:
0.01
PDM
SINGLE PULSE
0.001
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.0001
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 5, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
10
Table 1 - Typical Class AB Large Signal Impedance -- ARF1519
2.0
13.5
Zin (Ω)
10.6 -j 12.2
0.5 -j 2.7
ZOL (Ω)
31 -j 4.7
15.6 -j 16
Zin - Gate shunted with 25Ω IDQ = 100mA
ZOL - Conjugate of optimum load for 750 Watts
output at Vdd = 200V
5-2005
F (MHz)
050-4935 Rev A
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.1
ARF1519 -- 13.56 MHz Test Circuit
200V
L3
C7
C9
Output
L2
RF
Input
C10
C8
L1
C4
C5
T1
C6
DUT
C1
C2
C3
C1-C3 1nF X7R 100V smt
C4 2x 8.2 nF 1kV COG
C5 270pF x2 ATC 100C
C7-C10 8.2 nF 1kv COG
C11 390 + 27 pF ATC 100C
L1 2uH - 22t #24 enam. .312" dia.
L2 368 nH - 5t #12 .625" dia .5" l
L3 500nH 2t on 850u .5" bead
R1 2.2k 0.5W
T1 10:1t transformer
R1
Parts placement - Not to Scale.
13.56 MHz Test Amp
ARF1519
BeO
104T-100
ARF1519
T1
J2
J1
RF 12-04
Thermal Considerations and Package
Mounting:
5-2005
HAZARDOUS MATERIAL WARNING
050-4935 Rev A
The rated 1350W power dissipation is only
available when the package mounting surface is
at 25°C and the junction temperature is 200°C.
The thermal resistance between junctions and
case mounting surface is 0.12°C/W. When installed, an additional thermal impedance of 0.1°C/W
between the package base and the mounting surface is typical. Insure that the mounting surface
is smooth and flat. Thermal joint compound
must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. Use 4-40 or M3 screws torqued to 1.2 Nm.
The ceramic portion of the device between
leads and mounting surface is beryllium oxideBeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling
and mounting to avoid damage to this area
These devices must never be thrown away
with general industrial or domestic waste.
D
.466
.250
G
.500
.150r
S
ARF1519
.250
BeO
.750
1.000
1
104T-100
.125d
.500
2
3
1.250
1.500
4
.300
.200
.005 .040
1
2
3
4
Drain
Source
Source
Gate
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