IXYS GWM120-0075P3 Three phase full bridge with trench mosfets in dcb isolated high current package Datasheet

GWM 120-0075P3
VDSS
= 75 V
ID25
= 125 A
Ω
RDSon typ. = 3.7 mΩ
Three phase full bridge
with Trench MOSFETs
in DCB isolated high current package
L+
G3
G5
S3
S5
Pins
Gate
G1
S1
L1
L2
L3
G4
G6
S4
S6
G2
S2
Pow
s
er Pin
L-
Applications
MOSFETs
Conditions
VDSS
TVJ = 25°C to 150°C
Maximum Ratings
VGS
75
V
±20
V
ID25
ID90
TC = 25°C
TC = 90°C
125
95
A
A
IF25
IF90
TC = 25°C (diode)
TC = 90°C (diode)
130
85
A
A
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
RDSon
on chip level at
VGS = 10 V; ID = 60 A
VGSth
VDS = 20 V; ID = 1 mA
IDSS
VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
3.7
6.4
2
4.5 mΩ
mΩ
4
V
1
µA
mA
0.2
µA
0.1
IGSS
VGS = ±20 V; VDS = 0 V
Qg
Qgs
Qgd
VGS= 10 V; VDS = 60 V; ID = 25 A
td(on)
tr
td(off)
tf
VGS= 10 V; VDS = 30 V;
ID = 25 A; RG = 10 Ω
VF
(diode) IF = 60 A; VGS= 0 V
0.9
t rr
(diode) IF = 20 A; -di/dt = 100 A/µs; VDS = 30 V
90
ns
RthJC
RthJH
with heat transfer paste
1.1
0.85 K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
91
19
28
nC
nC
nC
36
56
130
50
ns
ns
ns
ns
1.4
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
V
0604
Symbol
1-3
GWM 120-0075P3
Component
Equivalent Circuits for Simulation
Symbol
Conditions
Maximum Ratings
IRMS
per pin in main current paths (L+, L-, L1, L2, L3)
may be additionally limited by external connections
TVJ
Tstg
VISOL
IISOL ≤ 1 mA; 50/60 Hz; t = 1 min
FC
Mounting force with clip
Symbol
Conditions
300
A
-40...+175
-55...+125
°C
°C
1000
V~
50 - 250
N
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
Rpin to chip
CP
coupling capacity between shorted
pins and mounting tab in the case
Weight
typ.
0.6
mΩ
160
pF
25
g
Thermal Response
junction - case (typ.)
Cth1 = 0.039 J/K; Rth1 = 0.28 K/W
Cth2 = 0.069 J/K; Rth2 = 0.57 K/W
Dimensions in mm (1 mm = 0.0394")
S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1
L2
L1
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
L-
L+
0604
L3
2-3
GWM 120-0075P3
2.4
1.5
VGS = 6 V
8V
10 V
12 V
V
1.2
2.0
RDSon
RDSon(25°C)
1.6
VDS
0.9
1.2
0.6
TVJ = 25°C
0.8
0.3
0.4
0.0
-50
0.0
0
100
A
200
300
0
50
ID
Fig. 1: typ. output characteristics
[VDS = ID (RDSon + 2x Rpin to chip)]
100
TVJ
150 C
Fig. 2: typ. dependence of RDSon on temperature
10
300
A
V
250
VGS
ID
8
200
6
VDS = 14 V
150
VDS = 60 V
4
100
TVJ = 125°C
50
2
TVJ = 25°C
0
0
0
1
2
3
0
5 V 6
4
20
40
Fig. 3: typ.transfer characteristics
80
100
nC
Fig. 4: typ. gate charge characteristics
1
300
A
60
QG
VGS
VGS = 0 V
K/W
250
-ID
0.1
200
ZthJC
0.01
150
100
0.001
TVJ = 125°C
50
TVJ = 25°C
0.0001
0.2
0.4
0.6
0.8 1.0
VSD
1.2
V
Fig. 5: typ. conduction characteristics
of body diode
0.00001
0.001
0.01
0.1
1
s
10
t
Fig. 6: typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
0.0001
0604
0
0
0.0
3-3
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