STMicroelectronics M48Z35AV-100MH6 256 kbit 32kb x8 zeropower sram Datasheet

M48Z35AY
M48Z35AV
256 Kbit (32Kb x8) ZEROPOWER® SRAM
■
INTEGRATED ULTRA LOW POWER SRAM,
POWER-FAIL CONTROL CIRCUIT and
BATTERY
■
READ CYCLE TIME EQUALS WRITE CYCLE
TIME
■
BATTERY LOW FLAG (BOK)
■
AUTOMATIC POWER-FAIL CHIP DESELECT
and WRITE PROTECTION
■
WRITE PROTECT VOLTAGES
(VPFD = Power-fail Deselect Voltage):
– M48Z35AY: 4.20V ≤ VPFD ≤ 4.50V
– M48Z35AV: 2.7V ≤ V PFD ≤ 3.0V
■
SELF-CONTAINED BATTERY in the CAPHAT
DIP PACKAGE
■
PACKAGING INCLUDES a 28-LEAD SOIC and
SNAPHAT® TOP
■
■
SNAPHAT (SH)
Battery
28
1
28
PCDIP28 (PC)
Battery CAPHAT
1
SOH28 (MH)
Figure 1. Logic Diagram
(to be Ordered Separately)
SOIC PACKAGE PROVIDES DIRECT
CONNECTION for a SNAPHAT TOP which
CONTAINS the BATTERY and CRYSTAL
VCC
PIN and FUNCTION COMPATIBLE with
JEDEC STANDARD 32K x8 SRAMs
DESCRIPTION
The M48Z35AY/35AV ZEROPOWER® RAM is a
32 Kbit x8 non-volatile static RAM that integrates
power-fail deselect circuitry and battery control
logic on a single die. The monolithic chip is available in two special packages to provide a highly integrated battery backed-up memory solution.
Table 1. Signal Names
A0-A14
Address Inputs
DQ0-DQ7
Data Inputs / Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
VCC
Supply Voltage
VSS
Ground
April 2000
15
8
A0-A14
W
DQ0-DQ7
M48Z35AY
M48Z35AV
E
G
VSS
AI02781B
1/16
M48Z35AY, M48Z35AV
Figure 2A. DIP Pin Connections
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
28
1
27
2
26
3
25
4
24
5
23
6
7 M48Z35AY 22
8 M48Z35AV 21
20
9
19
10
18
11
17
12
13
16
14
15
Figure 2B. SOIC Pin Connections
VCC
W
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
28
27
2
26
3
25
4
24
5
23
6
7 M48Z35AY 22
8 M48Z35AV 21
20
9
19
10
18
11
17
12
16
13
15
14
AI02782B
VCC
W
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
AI02783
Table 2. Absolute Maximum Ratings (1)
Symbol
TA
TSTG
TSLD (2)
Parameter
Value
Unit
Ambient Operating Temperature
Grade 1
Grade 6
0 to 70
–40 to 85
°C
Storage Temperature (VCC Off)
SNAPHAT
SOIC
–40 to 85
–55 to 125
°C
260
°C
Lead Solder Temperature for 10 seconds
VIO
Input or Output Voltages
–0.3 to 7
V
VCC
Supply Voltage
–0.3 to 7
V
IO
Output Current
20
mA
PD
Power Dissipation
1
W
Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational section
of this specification is not implied. Exposure to the absolute maximum rating conditions for extended periods of time may affect
reliability.
2. Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer than 30 seconds).
CAUTION: Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
CAUTION: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.
2/16
M48Z35AY, M48Z35AV
Table 3. Operating Modes (1)
VCC
Mode
Deselect
4.5V to 5.5V
or
3.0V to 3.6V
Write
Read
Read
E
G
W
DQ0-DQ7
Power
VIH
X
X
High Z
Standby
VIL
X
VIL
DIN
Active
VIL
VIL
VIH
DOUT
Active
VIL
VIH
VIH
High Z
Active
Deselect
VSO to VPFD (min) (2)
X
X
X
High Z
CMOS Standby
Deselect
≤ VSO
X
X
X
High Z
Battery Back-up Mode
Note: 1. X = VIH or VIL; VSO = Battery Back-up Switchover Voltage.
2. See Table 7 for details.
Figure 3. Block Diagram
A0-A14
LITHIUM
CELL
POWER
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
32K x 8
SRAM ARRAY
DQ0-DQ7
E
VPFD
W
G
VCC
The M48Z35AY/35AV is a non-volatile pin and
function equivalent to any JEDEC standard 32K x8
SRAM. It also easily fits into many ROM, EPROM,
and EEPROM sockets, providing the non-volatility
of PROMs without any requirement for special
write timing or limitations on the number of writes
that can be performed. The 28 pin 600mil DIP
CAPHAT™ houses the M48Z35AY/35AV silicon
with a long life lithium button cell in a single package.
VSS
AI01619B
The 28 pin 330mil SOIC provides sockets with
gold plated contacts at both ends for direct connection to a separate SNAPHAT housing containing the battery. The unique design allows the
SNAPHAT battery package to be mounted on top
of the SOIC package after the completion of the
surface mount process. Insertion of the SNAPHAT
housing after reflow prevents potential battery
damage due to the high temperatures required for
device surface-mounting. The SNAPHAT housing
is keyed to prevent reverse insertion.
3/16
M48Z35AY, M48Z35AV
Figure 4. AC Testing Load Circuit
Table 4. AC Measurement Conditions
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
≤ 5ns
0 to 3V
1.5V
Note that Output Hi-Z is defined as the point where data is no longer
driven.
The SOIC and battery packages are shipped separately in plastic anti-static tubes or in Tape & Reel
form.
For the 28 lead SOIC, the battery package (i.e.
SNAPHAT) part number is "M4Z28-BR00SH1".
The M48Z35AY/35AV also has its own Power-fail
Detect circuit. The control circuitry constantly monitors the single 5V supply for an out of tolerance
condition. When VCC is out of tolerance, the circuit
write protects the SRAM, providing a high degree
of data security in the midst of unpredictable system operation brought on by low VCC. As VCC falls
below approximately 3V, the control circuitry connects the battery which maintains data until valid
power returns.
READ MODE
The M48Z35AY/35AV is in the Read Mode whenever W (Write Enable) is high, E (Chip Enable) is
low. The device architecture allows ripple-through
access of data from eight of 264,144 locations in
the static storage array. Thus, the unique address
specified by the 15 Address Inputs defines which
one of the 32,768 bytes of data is to be accessed.
Valid data will be available at the Data I/O pins
within Address Access time (tAVQV) after the last
address input signal is stable, providing that the E
and G access times are also satisfied. If the E and
G access times are not met, valid data will be
available after the latter of the Chip Enable Access
time (tELQV) or Output Enable Access time
(tGLQV).
The state of the eight three-state Data I/O signals
is controlled by E and G. If the outputs are activat-
4/16
645Ω
DEVICE
UNDER
TEST
CL = 100pF or
5pF
CL includes JIG capacitance
1.75V
AI03211
ed before t AVQV, the data lines will be driven to an
indeterminate state until tAVQV. If the Address Inputs are changed while E and G remain active,
output data will remain valid for Output Data Hold
time (tAXQX) but will go indeterminate until the next
Address Access.
WRITE MODE
The M48Z35AY/35AV is in the Write Mode whenever W and E are low. The start of a write is referenced from the latter occurring falling edge of W or
E. A write is terminated by the earlier rising edge
of W or E. The addresses must be held valid
throughout the cycle. E or W must return high for
a minimum of tEHAX from Chip Enable or tWHAX
from Write Enable prior to the initiation of another
read or write cycle. Data-in must be valid tDVWH
prior to the end of write and remain valid for tWHDX
afterward. G should be kept high during write cycles to avoid bus contention; although, if the output
bus has been activated by a low on E and G, a low
on W will disable the outputs tWLQZ after W falls.
M48Z35AY, M48Z35AV
Table 5. Capacitance (1, 2)
(TA = 25 °C)
Symbol
CIN
CIO (3)
Parameter
Test Condition
Input Capacitance
Input / Output Capacitance
Min
Max
Unit
VIN = 0V
10
pF
VOUT = 0V
10
pF
Note: 1. Effective capacitance measured with power supply at 5V.
2. Sampled only, not 100% tested.
3. Outputs deselected.
Table 6. DC Characteristics
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.5V to 5.5V or 3.0v to 3.6V)
Symbol
Parameter
ILI (1)
Input Leakage Current
ILO (1)
Output Leakage Current
ICC
Supply Current
ICC1
Supply Current (Standby) TTL
ICC2
Supply Current (Standby) CMOS
Test Condition
Min
Max
Unit
0V ≤ VIN ≤ VCC
±1
µA
0V ≤ VOUT ≤ VCC
±5
µA
Outputs open
50
mA
E = VIH
3
mA
E = VCC – 0.2V
3
mA
VIL (2)
Input Low Voltage
–0.3
0.8
V
VIH
Input High Voltage
2.2
VCC + 0.3
V
VOL
Output Low Voltage
IOL = 2.1mA
0.4
V
VOH
Output High Voltage
IOH = –1mA
2.4
V
Note: 1. Outputs deselected.
2. Negative spikes of –1V allowed for up to 10ns once per cycle.
Table 7. Power Down/Up Trip Points DC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C)
Symbol
Parameter
Min
Typ
Max
Unit
VPFD
Power-fail Deselect Voltage (M48Z35AY)
4.2
4.35
4.5
V
VPFD
Power-fail Deselect Voltage (M48Z35AV)
2.7
2.9
3.0
V
VSO
Battery Back-up Switchover Voltage (M48Z35AY)
3.0
V
VSO
Battery Back-up Switchover Voltage (M48Z35AV)
VPFD – 100mV
V
tDR (2)
Expected Data Retention Time
10
YEARS
Note: 1. All voltages referenced to VSS.
2. At 25 °C.
5/16
M48Z35AY, M48Z35AV
Table 8. Power Down/Up AC Characteristics
(TA = 0 to 70 °C or –40 to 85 °C)
Symbol
tPD
Parameter
Min
E or W at VIH before Power Down
Max
Unit
0
µs
tF (1)
VPFD (max) to VPFD (min) VCC Fall Time
300
µs
tFB (2)
VPFD (min) to VSS VCC Fall Time
10
µs
tR
VPFD (min) to VPFD (max) VCC Rise Time
10
µs
tRB
VSS to VPFD (min) VCC Rise Time
1
µs
tREC (3)
VPFD (max) to Inputs Recognized
40
200
ms
Note: 1. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC passes V PFD (min).
2. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
3. tREC (min) = 20ms for industrial temperature grade (6) device.
Figure 5. Power Down/Up Mode AC Waveforms
VCC
VPFD (max)
VPFD (min)
VSO
tF
tR
tFB
tDR
tPD
INPUTS
tRB
RECOGNIZED
tREC
DON'T CARE
RECOGNIZED
HIGH-Z
OUTPUTS
VALID
(PER CONTROL INPUT)
VALID
(PER CONTROL INPUT)
AI01168C
6/16
M48Z35AY, M48Z35AV
Table 9. Read Mode AC Characteristics
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.5V to 5.5V or 3.0V to 3.6V)
Symbol
M48Z35AY
M48Z35AV
-70
-100
Parameter
Min
tAVAV
Read Cycle Time
Max
70
Min
Unit
Max
100
ns
tAVQV (1)
Address Valid to Output Valid
70
100
ns
tELQV (1)
Chip Enable Low to Output Valid
70
100
ns
tGLQV (1)
Output Enable Low to Output Valid
35
50
ns
tELQX (2)
Chip Enable Low to Output Transition
5
10
ns
tGLQX (2)
Output Enable Low to Output Transition
5
5
ns
tEHQZ (2)
Chip Enable High to Output Hi-Z
25
50
ns
tGHQZ (2)
Output Enable High to Output Hi-Z
25
40
ns
tAXQX (1)
Address Transition to Output Transition
10
10
ns
Note: 1. CL = 100pF (see Figure 4).
2. CL = 5pF (see Figure 4).
Figure 6. Read Mode AC Waveforms.
tAVAV
A0-A14
VALID
tAVQV
tAXQX
tELQV
tEHQZ
E
tELQX
tGLQV
tGHQZ
G
tGLQX
DQ0-DQ7
VALID
AI00925
Note: Write Enable (W) = High.
7/16
M48Z35AY, M48Z35AV
Table 10. Write Mode AC Characteristics
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.5V to 5.5V or 3.0V to 3.6V)
Symbol
M48Z35AY
M48Z35AV
-70
-100
Parameter
Min
Max
Min
Unit
Max
tAVAV
Write Cycle Time
70
100
ns
tAVWL
Address Valid to Write Enable Low
0
0
ns
tAVEL
Address Valid to Chip Enable Low
0
0
ns
tWLWH
Write Enable Pulse Width
50
80
ns
tELEH
Chip Enable Low to Chip Enable High
55
80
ns
tWHAX
Write Enable High to Address Transition
0
10
ns
tEHAX
Chip Enable High to Address Transition
0
10
ns
tDVWH
Input Valid to Write Enable High
30
50
ns
tDVEH
Input Valid to Chip Enable High
30
50
ns
tWHDX
Write Enable High to Input Transition
5
5
ns
tEHDX
Chip Enable High to Input Transition
5
5
ns
tWLQZ (1, 2)
Write Enable Low to Output Hi-Z
25
50
ns
tAVWH
Address Valid to Write Enable High
60
80
ns
tAVEH
Address Valid to Chip Enable High
60
80
ns
Write Enable High to Output Transition
5
10
ns
tWHQX (1, 2)
Note: 1. CL = 5pF (see Figure 4).
2. If E goes low simultaneously with W going low, the outputs remain in the high impedance state.
DATA RETENTION MODE
With valid VCC applied, the M48Z35AY/35AV operates as a conventional BYTEWIDE™ static
RAM. Should the supply voltage decay, the RAM
will automatically power-fail deselect, write protecting itself when V CC falls within the VPFD(max),
VPFD(min) window. All outputs become high impedance, and all inputs are treated as "don't care."
Note: A power failure during a write cycle may
corrupt data at the currently addressed location,
but does not jeopardize the rest of the RAM's content. At voltages below VPFD(min), the user can be
assured the memory will be in a write protected
state, provided the VCC fall time is not less than tF.
The M48Z35AY/35AV may respond to transient
noise spikes on V CC that reach into the deselect
8/16
window during the time the device is sampling
VCC. Therefore, decoupling of the power supply
lines is recommended.
When V CC drops below VSO, the control circuit
switches power to the internal battery which preserves data. The internal button cell will maintain
data in the M48Z35AY/35AV for an accumulated
period of at least 10 years (at 25°C) when VCC is
less than VSO.
As system power returns and V CC rises above
VSO, the battery is disconnected, and the power
supply is switched to external VCC. Write protection continues until V CC reaches VPFD(min) plus
tREC(min). Normal RAM operation can resume
tREC after VCC exceeds VPFD(max).
M48Z35AY, M48Z35AV
Figure 7. Write Enable Controlled, Write AC Waveform
tAVAV
VALID
A0-A14
tAVWH
tWHAX
tAVEL
E
tWLWH
tAVWL
W
tWLQZ
tWHQX
tWHDX
DQ0-DQ7
DATA INPUT
tDVWH
AI00926
Figure 8. Chip Enable Controlled, Write AC Waveforms
tAVAV
A0-A14
VALID
tAVEH
tAVEL
tELEH
tEHAX
E
tAVWL
W
tEHDX
DQ0-DQ7
DATA INPUT
tDVEH
AI00927
9/16
M48Z35AY, M48Z35AV
Figure 9. Checking the BOK Flag Status
Figure 10. Supply Voltage Protection
POWER-UP
VCC
READ DATA
AT ANY ADDRESS
VCC
WRITE DATA
COMPLEMENT BACK
TO SAME ADDRESS
0.1µF
DEVICE
VSS
READ DATA
AT SAME
ADDRESS AGAIN
AI02169
IS DATA
COMPLEMENT
OF FIRST
READ?
(BATTERY OK)
YES
NO (BATTERY LOW)
NOTIFY SYSTEM
OF LOW BATTERY
(DATA MAY BE
CORRUPTED)
WRITE ORIGINAL
DATA BACK TO
SAME ADDRESS
CONTINUE
AI00607
Also, as VCC rises, the battery voltage is checked.
If the voltage is less than approximately 2.5V, an
internal Battery Not OK (BOK) flag will be set. The
BOK flag can be checked after power up. If the
BOK flag is set, the first write attempted will be
blocked. The flag is automatically cleared after the
first write, and normal RAM operation resumes.
Figure 9 illustrates how a BOK check routine could
be structured.
For more information on Battery Storage Life refer
to the Application Note AN1012.
10/16
POWER SUPPLY DECOUPLING and
UNDERSHOOT PROTECTION
ICC transients, including those produced by output
switching, can produce voltage fluctuations, resulting in spikes on the VCC bus. These transients
can be reduced if capacitors are used to store energy, which stabilizes the V CC bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1µF (as shown in Figure
10) is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate negative voltage spikes on V CC that drive it to values
below V SS by as much as one Volt. These negative spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to connect a schottky diode from V CC to VSS (cathode
connected to VCC, anode to VSS). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.
M48Z35AY, M48Z35AV
Table 11. Ordering Information Scheme
Example:
M48Z35AY
-70 MH
1
TR
Supply Voltage and Write Protect Voltage
35AY = VCC = 4.5V to 5.5V; VPFD = 4.2V to 4.5V
35AV = VCC = 3.0V to 3.6V; VPFD = 2.7V to 3.0V
Speed
-70 = 70ns (M48Z35AY)
-100 = 100ns (M48Z35AV)
Package
PC = PCDIP28
MH (1) = SOH28
Temperature Range
1 = 0 to 70 °C
6 (2) = –40 to 85 °C
Shipping Method for SOIC
blank = Tubes
TR = Tape & Reel
Note: 1. The SOIC package (SOH28) requires the battery package (SNAPHAT) which is ordered separately under the part number
"M4Zxx-BR00SH1" in plastic tube or "M4Zxx-BR00SH1TR" in Tape & Reel form.
2. Industrial temperature grade available in SOIC package (SOH28) only.
Caution: Do not place the SNAPHAT battery package "M4Z28-BR00SH1" in conductive foam since will drain the lithium button-cell battery.
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you.
Table 12. Revision History
Date
Revision Details
September 1999
First Issue
04/20/00
SH and SH28 packages for 2-pin and 2-socket removed
11/16
M48Z35AY, M48Z35AV
Table 13. PCDIP28 - 28 pin Plastic DIP, battery CAPHAT, Package Mechanical Data
mm
inches
Symb
Typ
Min
Max
A
8.89
A1
Typ
Min
Max
9.65
0.350
0.380
0.38
0.76
0.015
0.030
A2
8.38
8.89
0.330
0.350
B
0.38
0.53
0.015
0.021
B1
1.14
1.78
0.045
0.070
C
0.20
0.31
0.008
0.012
D
39.37
39.88
1.550
1.570
E
17.83
18.34
0.702
0.722
e1
2.29
2.79
0.090
0.110
e3
29.72
36.32
1.170
1.430
eA
15.24
16.00
0.600
0.630
L
3.05
3.81
0.120
0.150
N
28
28
Figure 11. PCDIP28 - 28 pin Plastic DIP, battery CAPHAT, Package Outline
A2
A1
B1
B
e1
A
L
C
eA
e3
D
N
E
1
Drawing is not to scale.
12/16
PCDIP
M48Z35AY, M48Z35AV
Table 14. SOH28 - 28 lead Plastic Small Outline, battery SNAPHAT, Package Mechanical Data
mm
inches
Symb
Typ
Min
Max
A
Typ
Min
3.05
Max
0.120
A1
0.05
0.36
0.002
0.014
A2
2.34
2.69
0.092
0.106
B
0.36
0.51
0.014
0.020
C
0.15
0.32
0.006
0.012
D
17.71
18.49
0.697
0.728
E
8.23
8.89
0.324
0.350
–
–
–
–
eB
3.20
3.61
0.126
0.142
H
11.51
12.70
0.453
0.500
L
0.41
1.27
0.016
0.050
α
0°
8°
0°
8°
N
28
e
1.27
0.050
28
CP
0.10
0.004
Figure 12. SOH28 - 28 lead Plastic Small Outline, battery SNAPHAT, Package Outline
A2
A
C
B
eB
e
CP
D
N
E
H
A1
α
L
1
SOH-A
Drawing is not to scale.
13/16
M48Z35AY, M48Z35AV
Table 15. SH - SNAPHAT Housing for 48 mAh Battery, Package Mechanical Data
mm
inches
Symb
Typ
Min
A
Max
Typ
Min
Max
9.78
0.385
A1
6.73
7.24
0.265
0.285
A2
6.48
6.99
0.255
0.275
A3
0.38
0.015
B
0.46
0.56
0.018
0.022
D
21.21
21.84
0.835
0.860
E
14.22
14.99
0.560
0.590
eA
15.55
15.95
0.612
0.628
eB
3.20
3.61
0.126
0.142
L
2.03
2.29
0.080
0.090
Figure 13. SH - SNAPHAT Housing for 48 mAh Battery, Package Outline
A1
eA
A2
A
A3
B
L
eB
D
E
SHZP-A
Drawing is not to scale.
14/16
M48Z35AY, M48Z35AV
Table 16. SH - SNAPHAT Housing for 120 mAh Battery, Package Mechanical Data
mm
inches
Symb
Typ
Min
A
Max
Typ
Min
Max
10.54
0.415
A1
8.00
8.51
0.315
0.335
A2
7.24
8.00
0.285
0.315
A3
0.38
0.015
B
0.46
0.56
0.018
0.022
D
21.21
21.84
0.835
0.860
E
17.27
18.03
0.680
0.710
eA
15.55
15.95
0.612
0.628
eB
3.20
3.61
0.126
0.142
L
2.03
2.29
0.080
0.090
Figure 14. SH - SNAPHAT Housing for 120 mAh Battery, Package Outline
A1
eA
A2
A
A3
B
L
eB
D
E
SHZP-A
Drawing is not to scale.
15/16
M48Z35AY, M48Z35AV
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