Intersil CA3127M96 High frequency npn transistor array Datasheet

CA3127
High Frequency NPN Transistor Array
August 1996
Features
Description
• Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz
The CA3127 consists of five general purpose silicon NPN
transistors on a common monolithic substrate. Each of the
completely isolated transistors exhibits low 1/f noise and a
value of fT in excess of 1GHz, making the CA3127 useful
from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate
connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides
close electrical and thermal matching of the five transistors.
• Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz
• Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz
• Five Independent Transistors on a Common Substrate
Applications
• VHF Amplifiers
Ordering Information
• Multifunction Combinations - RF/Mixer/Oscillator
• Sense Amplifiers
PART
NUMBER
(BRAND)
• Synchronous Detectors
TEMP.
RANGE (oC)
PACKAGE
PKG.
NO.
• VHF Mixers
CA3127E
-55 to 125
16 Ld PDIP
E16.3
CA3127M
(3127)
-55 to 125
16 Ld SOIC
M16.15
CA3127M96
(3127)
-55 to 125
16 Ld SOIC Tape and Reel M16.15
• IF Converter
• IF Amplifiers
• Synthesizers
• Cascade Amplifiers
Pinout
CA3127
(PDIP, SOIC)
TOP VIEW
1
16
Q1
15
2
Q2
14
3
13
4
Q5
SUBSTRATE
5
12
11
6
Q3
Q4
7
10
8
9
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
5-1
File Number
662.3
CA3127
Absolute Maximum Ratings
Thermal Information
The following ratings apply for each transistor in the device
Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage, VCIO (Note 1). . . . . . . . . . . . . 20V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Thermal Resistance (Typical, Note 2)
θJA (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
175
Maximum Power Dissipation, PD (Any One Transistor). . . . . . 85mW
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . 175oC
Maximum Junction Temperature (Plastic Packages). . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TA = 25oC
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS (For Each Transistor)
Collector-to-Base Breakdown Voltage
IC = 10µA, IE = 0
20
32
-
V
Collector-to-Emitter Breakdown Voltage
IC = 1mA, IB = 0
15
24
-
V
Collector-to-Substrate Breakdown-Voltage
IC1 = 10µA, IB = 0, IE = 0
20
60
-
V
Emitter-to-Base Breakdown Voltage (Note 3)
IE = 10µA, IC = 0
4
5.7
-
V
Collector-Cutoff-Current
VCE = 10V IB = 0
-
-
0.5
µA
Collector-Cutoff-Current
VCB = 10V, IE = 0
-
-
40
nA
DC Forward-Current Transfer Ratio
VCE = 6V
IC = 5mA
35
88
-
IC = 1mA
40
90
-
IC = 0.1mA
35
85
-
IC = 5mA
0.71
0.81
0.91
V
IC = 1mA
0.66
0.76
0.86
V
IC = 0.1mA
Base-to-Emitter Voltage
VCE = 6V
0.60
0.70
0.80
V
Collector-to-Emitter Saturation Voltage
IC = 10mA, IB = 1mA
-
0.26
0.50
V
Magnitude of Difference in VBE
Q1 and Q2 Matched
VCE = 6V, IC = 1mA
-
0.5
5
mV
-
0.2
3
µA
Noise Figure
f = 100kHz, RS = 500Ω, IC = 1mA
-
2.2
-
dB
Gain-Bandwidth Product
VCE = 6V, IC = 5mA
-
1.15
-
GHz
Collector-to-Base Capacitance
VCB = 6V, f = 1MHz
-
pF
VCI = 6V, f = 1MHz
-
See
Fig. 5
-
Collector-to-Substrate Capacitance
-
pF
Magnitude of Difference in IB
DYNAMIC CHARACTERISTICS
Emitter-to-Base Capacitance
VBE = 4V, f = 1MHz
-
Voltage Gain
VCE = 6V, f = 10MHz, RL = 1kΩ, IC = 1mA
-
Power Gain
Cascode Configuration
f = 100MHz, V+ = 12V, IC = 1mA
27
-
Common-Emitter Configuration
VCE = 6V, IC = 1mA, f = 200 MHz
-
Noise Figure
Input Resistance
Output Resistance
-
pF
-
dB
30
-
dB
3.5
-
dB
400
-
Ω
28
-
4.6
-
kΩ
Input Capacitance
-
3.7
-
pF
Output Capacitance
-
2
-
pF
Magnitude of Forward Transadmittance
-
24
-
mS
NOTE:
3. When used as a zener for reference voltage, the device must not be subjected to more than 0.1mJ of energy from any possible capacitance
or electrostatic discharge in order to prevent degradation of the junction. Maximum operating zener current should be less than 10mA.
5-2
CA3127
Test Circuits
V+
10kΩ
BIAS-CURRENT
ADJ
470
pF
RL
2
51Ω
6
4
0.01
µF
1µF
VO
Q2
0.01µF
8
1µF
Q3
470pF
3
470pF
0.01
µF
7
VI GEN
FIGURE 1. VOLTAGE-GAIN TEST CIRCUIT USING CURRENT-MIRROR BIASING FOR Q2
1.5 - 8pF
VO
C2
(NOTE 5)
12
8.2
kΩ
SHIELD
Q5
2
VI
1000pF
13
0.47µH
14
620Ω
1000
pF
1000
pF
TEST
POINT
0.3µH
4
Q2
560Ω
1.8pF
C1
(NOTE 5)
750Ω
1%
3
NOTES:
1000
pF
OHMITE
Z144
6
+12V
25kΩ
8
Q3
1000
pF
7
5
4. This circuit was chosen because it conveniently represents a close approximation in performance to a properly unilateralized single transistor of this type. The use of
Q3 in a current-mirror configuration facilitates simplified
biasing. The use of the cascode circuit in no way implies
that the transistors cannot be used individually.
5. E.F. Johnson number 160-104-1 or equivalent.
FIGURE 2. 100MHz POWER-GAIN AND NOISE-FIGURE TEST CIRCUIT
GENERAL RADIO 1021-P1
100MHz GENERATOR
100MHz
TEST SET
ATTN
BOONTON 91C
RF VOLTMETER
12VDC
POWER SUPPLY
FIGURE 3A. POWER GAIN SET-UP
VHF NOISE SOURCE
HEWLETT PACKARD HP343A
100MHz
TEST SET
100MHz
POST AMPLIFIER
12VDC
POWER SUPPLY
15VDC
POWER SUPPLY
NOISE FIGURE METER
HEWLETT PACKARD HP342A
FIGURE 3B. NOISE FIGURE SET-UP
FIGURE 3. BLOCK DIAGRAMS OF POWER-GAIN AND NOISE-FIGURE TEST SET-UPS
5-3
CA3127
Typical Performance Curves
TA = 25oC
VCE = 6V
RSOURCE = 1kΩ
f = 10Hz
30
f = 100Hz
NOISE FIGURE (dB)
NOISE FIGURE (dB)
30
TA = 25oC
VCE = 6V
RSOURCE = 500Ω
20
f = 1kHz
10
f = 10kHz
f = 100kHz
f = 10Hz
f = 100Hz
20
f = 1kHz
f = 10kHz
10
f = 100kHz
0
0.01
0
0.01
0.1
1.0
COLLECTOR CURRENT (mA)
FIGURE 4. NOISE FIGURE vs COLLECTOR CURRENT
FIGURE 5. NOISE FIGURE vs COLLECTOR CURRENT
1.0
BASE-TO-EMITTER VOLTAGE (V)
TA = 25oC
VCE = 6V
GAIN-BANDWIDTH PRODUCT (GHz)
0.1
1.0
COLLECTOR CURRENT (mA)
1.2
1.1
1.0
0.9
TA = -55oC
0.9
TA = 25oC
0.8
0.7
TA = 125oC
0.6
0.5
0.4
0.8
0
1
2
3
4
5
6
7
8
9
10
0.1
1
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
FIGURE 6. GAIN-BANDWIDTH PRODUCT vs COLLECTOR
CURRENT
FIGURE 7. BASE-TO-EMITTER VOLTAGE vs COLLECTOR
CURRENT
CAPACITANCE (pF)
TA = 25oC
f = 1MHz
TRANSISTOR
2.25
CAPACITANCE (pF)
2.00
1.75
BIAS
(V)
CCI
1.50
1.25
1.00
0.75
CEB
0.50
CCB
0.25
0
1
2
10
3
4
5
6
7
8
9
CCE
CCB
CEB
CCI
PKG TOTAL PKG TOTAL PKG TOTAL PKG TOTAL
-
6V
-
6V
-
4V
-
6V
Q1
0.025 0.190 0.090 0.125 0.365 0.610 0.475 1.65
Q2
0.015 0.170 0.225 0.265 0.130 0.360 0.085 1.35
Q3
0.040 0.200 0.215 0.240 0.360 0.625 0.210 1.40
Q4
0.040 0.190 0.225 0.270 0.365 0.610 0.085 1.25
Q5
0.010 0.165 0.095 0.115 0.140 0.365 0.090 1.35
10
BIAS VOLTAGE (V)
FIGURE 8A. CAPACITANCE vs BIAS VOLTAGE FOR Q2
FIGURE 8B. TYPICAL CAPACITANCE VALUES AT f = 1MHz.
THREE TERMINAL MEASUREMENT. GUARD ALL
TERMINALS EXCEPT THOSE UNDER TEST.
5-4
CA3127
Typical Performance Curves
40
TA = 25oC, VCE = 6V, RL = 100Ω
FOR TEST CIRCUIT SEE FIGURE 19
35
IC = 1mA
30
25
VOLTAGE GAIN (dB)
30
VOLTAGE GAIN (dB)
IC = 5mA
35
IC = 5mA
20
15
IC = 1mA
10
IC = 0.5mA
5
20
IC = 0.2mA
15
10
5
IC = 0.2mA
0
IC = 0.5mA
25
0
-5
TA = 25oC, VCE = 6V, RL = 1kΩ
FOR TEST CIRCUIT SEE FIGURE 19
-5
-10
-10
1
10
100
FREQUENCY (MHz)
1000
1
100
TA = 25oC, VCE = 6V, IC = 1mA
TA = 25oC
8
VCE = 6V
80
70
60
50
40
0.1
1.0
COLLECTOR CURRENT (mA)
OUTPUT CONDUCTANCE (g22) (mS)
SUSCEPTANCE (b11) (mS)
INPUT CONDUCTANCE (g11) OR
7
6
b11
4
3
2
1
0
2
3
4
5
6
7
8
COLLECTOR CURRENT (mA)
3
2
1000
FIGURE 12. INPUT ADMITTANCE (Y11) vs FREQUENCY
g11
1
g11
4
FREQUENCY (MHz)
9
0
5
0
100
TA = 25oC
VCE = 6V
f = 200MHz
5
b11
6
1
10
FIGURE 11. DC FORWARD-CURRENT TRANSFER RATIO (hFE)
vs COLLECTOR CURRENT
8
7
SUSCEPTANCE (b11) (mS)
90
1000
FIGURE 10. VOLTAGE GAIN vs FREQUENCY
INPUT CONDUCTANCE (g11) OR
DC FORWARD CURRENT TRANSFER RATIO
FIGURE 9. VOLTAGE GAIN vs FREQUENCY
10
100
FREQUENCY (MHz)
9
1.3
1.2
1.1
TA = 25oC
VCE = 6V
IC = 1mA
1.0
0.9
0.8
b22
7
0.6
6
0.5
5
0.4
4
0.3
0.2
3
g22
0.1
2
1
0
1000
0
100
10
8
0.7
OUTPUT SUSCEPTANCE (b22) (mS)
40
(Continued)
FREQUENCY (MHz)
FIGURE 13. INPUT ADMITTANCE (Y11) vs COLLECTOR
CURRENT
FIGURE 14. OUTPUT ADMITTANCE (Y22) vs FREQUENCY
5-5
CA3127
0.375
2.7
0.350
2.6
g22
0.325
2.5
0.300
2.4
0.275
2.3
0.250
2.2
0.225
2.1
0.200
2.0
0.175
0
1
2
1.9
3
4 5 6 7 8 9 10 11 12
COLLECTOR CURRENT (mA)
MAGNITUDE OF FORWARD
TRANSADMITTANCE (|Y21|) (mS)
-20
-30
-40
θ21
-50
-60
|Y21|
30
-70
20
-80
10
-90
0
100
150
-100
1000
200
FREQUENCY (MHz)
MAGNITUDE OF REVERSE
TRANSADMITTANCE (|Y12|) (mS)
-10
VCE = 6V
IC = 1mA
-20
|Y21|
60
40
-80
20
1
2
-100
3 4 5 6 7 8 9 10 11 12
COLLECTOR CURRENT (mA)
TA = 25oC
VCE = 6V
f = 200MHz
θ12
0.21
MAGNITUDE OF REVERSE
TRANSADMITTANCE (|Y12|) (mS)
-90
-110
-120
-130
0
1
2
-150
3 4 5 6 7 8 9 10 11 12
COLLECTOR CURRENT (mA)
FIGURE 18. REVERSE TRANSADMITTANCE (Y12) vs
COLLECTOR CURRENT
0.6
-90
θ12
-95
0.4
-100
0.3
-105
|Y12|
-110
-115
0.1
0
100
-80
-100
|Y12|
TA = 25oC
VCE = 6V
IC = 1mA
0.2
-60
θ21
-140
FIGURE 17. FORWARD TRANSADMITTANCE (Y21) vs
FREQUENCY
0.5
-40
FIGURE 16. FORWARD TRANSADMITTANCE (Y21) vs
COLLECTOR CURRENT
PHASE-ANGLE OF FORWARD
TRANSADMITTANCE (|θ21|) (DEGREES)
TA = 25oC
80
0
FIGURE 15. OUTPUT ADMITTANCE (Y22) vs COLLECTOR
CURRENT
0
PHASE-ANGLE OF FORWARD
TRANSADMITTANCE (|θ21|) (DEGREES)
2.8
VCE = 6V
f = 200MHz
100
FREQUENCY (MHz)
-120
1000
FIGURE 19. REVERSE TRANSADMITTANCE (Y12) vs FREQUENCY
5-6
PHASE-ANGLE OF REVERSE
TRANSADMITTANCE (|θ12|) (DEGREES)
b22
PHASE-ANGLE OF REVERSE
TRANSADMITTANCE (|θ12|) (DEGREES)
0.400
TA = 25oC
MAGNITUDE OF FORWARD
TRANSADMITTANCE (|Y21|) (mS)
TA = 25oC
VCE = 6V
f = 200MHz
(Continued)
OUTPUT SUSCEPTANCE (b22) (mS)
OUTPUT CONDUCTANCE (g22) (mS)
Typical Performance Curves
CA3127
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