Diotec BC849C Surface mount si-epitaxial planartransistor Datasheet

BC 846 ... BC 850
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
NPN
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
1.1
2.9 ±0.1
0.4
1.3 ±0.1
2.5 max
3
Type
Code
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
2
1
250 mW
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.9
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1=B
2=E
3=C
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BC 846
BC 847/850
BC 848/849
Collector-Emitter-voltage
B open
VCE0
65 V
45 V
30 V
Collector-Base-voltage
E open
VCB0
80 V
50 V
30 V
Emitter-Base-voltage
C open
VEB0
6V
5V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (DC)
IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
200 mA
Peak Base current – Basis-Spitzenstrom
IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
- IEM
200 mA
Junction temperature – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Group A
Group B
Group C
2
DC current gain – Kollektor-Basis-Stromverhältnis )
VCE = 5 V, IC = 10 :A
hFE
typ. 90
typ. 150
typ. 270
VCE = 5 V, IC = 2 mA
hFE
110...220
200...450
420...800
Small signal current gain
Kleinsignal-Stromverstärkung
hfe
typ. 220
typ. 330
typ. 600
Input impedance – Eingangs-Impedanz
hie
1.6...4.5 kS
3.2...8.5 kS
6...15 kS
Output admittance – Ausgangs-Leitwert
hoe
18 < 30 :S
30 < 60 :S
60 < 110 :S
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
typ.1.5 *10-4
typ. 2 *10-4
typ. 3 *10-4
h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz
1
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
10
01.11.2003
General Purpose Transistors
BC 846 ... BC 850
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspannung 1)
IC = 10 mA, IB = 0.5 mA
VCEsat
–
90 mV
250 mV
IC = 100 mA, IB = 5 mA
VCEsat
–
200 mV
600 mV
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 10 mA, IB = 0.5 mA
VBEsat
–
700 mV
–
IC = 100 mA, IB = 5 mA
VBEsat
–
900 mV
–
VCE = 5 V, IC = 2 mA
VBEon
580 mV
660 mV
700 mV
VCE = 5 V, IC = 10 mA
VBEon
–
–
770 mV
IE = 0, VCB = 30 V
ICB0
–
–
15 nA
IE = 0, VCB = 30 V, Tj = 150/C
ICB0
–
–
5 :A
IEB0
–
–
100 nA
Base-Emitter voltage – Basis-Emitter-Spannung 1)
Collector-Base cutoff current – Kollektorreststrom
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
100 MHz
–
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
–
3.5 pF
6 pF
–
9 pF
–
–
2 dB
10 dB
1.2 dB
4 dB
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEB0
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 :A
RG = 2 kS, f = 1 kHz,
)f = 200 Hz
VCE = 5 V, IC = 200 :A
RG = 2 kS, f = 1 kHz,
f = 30 ... 15000 Hz
BC 846...
F
BC 848
BC 849/850
F
BC 849
F
–
1.4 dB
4 dB
BC 850
F
–
1.4 dB
3 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking of available current gain
groups per type
Stempelung der lieferbaren Stromverstärkungsgruppen pro Typ
420 K/W 2)
RthA
BC 856 ... BC 860
BC 846A = 1A
BC 846B = 1B
BC 847A = 1E
BC 847B = 1F
BC 847C = 1G
BC 848A = 1J
BC 848B = 1K
BC 848C = 1L
BC 849B = 2B
BC 849C = 2C
BC 850B = 2F
BC 850C = 2G
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
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2
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