NEC NNCD16J Esd noise clipping diode Datasheet

DATA SHEET
ESD NOISE CLIPPING DIODE
NNCD5.6J to NNCD36J
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE
2-PIN ULTRA SUPER MINI MOLD (FLAT TYPE)
DESCRIPTION
products
(Electrostatic
are
a
Discharge)
diode
developed
absorption.
for
Based
ESD
on
1.4 ± 0.1
the
1.0 ± 0.1
IEC-61000-4-2 test on electromagnetic interference (EMI),
0.6 ± 0.1
the diode assures an endurance, thus making itself most
0.3 ± 0.05
These
PACKAGE DRAWING (Unit: mm)
suitable for external interface circuit protection.
These products are can cope with more high density
assembling.
0.5 MAX.
0.13 ± 0.05
Cathode Indication
FEATURES
• Base on the electrostatic discharge immunity test (IEC
61000-4-2),
the product assures the minimum endurance.
0.05 MAX.
• Mounted in the ultra super mini mold (flat) package, the
product can achiever high density and automatic packaging.
APPLICATIONS
• External interface circuit ESD absorption.
• Circuits for waveform clipper, surge absorber
MAXIMUM RATINGS (TA = 25°C)
Item
Symbol
Power Dissipation
P
Surge Reverse Power
PRSM
Junction Temperature
Storage Temperature
Tj
Tstg
Rating
Unit
150
mW
85 (t = 10 µs, 1 pulse)
Remark
Total
W
150
o
−55 to +150
o
C
C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15985EJ3V1DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2003
NNCD5.6J to NNCD36J
ELECTRICAL CHARACTERISTICS (TA = 25°C)
TYPE No.
Breakdown Voltage
Note1
Capacitance
Reverse Leakage
IR (µA)
Ct (pF)
VBR (V)
Note2
(kV)
MIN.
MAX.
IT (mA)
TYP.
Condition
MAX.
VR (V)
MIN.
NNCD5.6J
5.3
6.3
5
110
VR = 0 V
5
2.5
30
C = 150 pF
NNCD6.8J
6.2
7.1
5
90
f = 1 MHz
2
3.5
30
R = 330 Ω
NNCD8.2J
7.7
8.7
5
70
2
5.0
30
Contact
NNCD10J
9.0
11.0
5
55
2
7.0
30
discharge
NNCD16J
15.0
17.0
5
30
2
12.0
30
NNCD18J
16.2
19.8
5
25
2
13.0
23
NNCD24J
22.0
26.0
5
20
2
19.0
15
NNCD36J
34.0
38.0
2
15
2
27.0
12
Notes 1. Tested with pulse (40 ms)
2. Based upon with IEC 61000-4-2
2
ESD Voltage
Data Sheet D15985EJ3V1DS
IT (mA)
NNCD5.6J to NNCD36J
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure 1. POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
TA - Ambient Temperature - °C
Figure 2. IT - VBR CHARACTERISTICS
100000
NNCD5.6J
NNCD8.2J
NNCD16J
NNCD24J
NNCD36J
10000
IT - On-state Current - µA
P - Power Dissipation - mW
180
1000
100
10
1
0.1
NNCD6.8J
NNCD10J
NNCD18J
0.01
0
5
10
15
20
25
30
35
40
45
VBR - Breakdown Voltage - V
Data Sheet D15985EJ3V1DS
3
NNCD5.6J to NNCD36J
Figure 3. Ct - VR CHARACTERISTICS
90
Ct - Capacitance between Terminal - pF
80
TA = 25 ˚C
f = 1 MHz
NNCD5.6J
70
NNCD6.8J
60
50
NNCD8.2J
40
NNCD10J
30
20
NNCD16J
NNCD18J
10
NNCD24J
NNCD36J
0
0.1
1
100
10
VR - Reverse Voltage - V
Figure 4. SURGE REVERSE POWER RATINGS
TA = 25˚C
Non-Repetive
PRSM
PRSM - Surge Reverse Power - W
1000
tT
100
NNCD[ ]J
10
1
1µ
10 µ
100 µ
1m
10 m
100 m
tT - Pulse Width - s
Zth - Transient Thermal Impedance - (ºC/W)
Figure 5. TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
1000
833˚C/W
NNCD[ ]J
100
10
1
100 µ
1m
10m
100 m
1
10
100
1000
t - Time - s
Remark When using ceramic board of 10 x 7.5 x 0.75 mm (Cu film 11 x 2 x 0.035 mm)
4
Data Sheet D15985EJ3V1DS
NNCD5.6J to NNCD36J
• The information in this document is current as of January, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
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M8E 02. 11-1
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