IRF IRHNA7160 Simple drive requirement Datasheet

PD-91396F
IRHNA7160
JANSR2N7432U
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
REF: MIL-PRF-19500/664
®
™
RAD-Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level
RDS(on)
0.04Ω
0.04Ω
ID
QPL Part Number
51A
51A
JANSR2N7432U
JANSF2N7432U
IRHNA7160
IRHNA3160
100K Rads (Si)
300K Rads (Si)
IRHNA4160
500K Rads (Si)
0.04Ω
51A
JANSG2N7432U
IRHNA8160 1000K Rads (Si)
0.04Ω
51A
JANSH2N7432U
International Rectifier’s RAD-HardTM HEXFET ® technology
provides high performance power MOSFETs for space
applications. This technology has over a decade of proven
performance and reliability in satellite applications. These
devices have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical parameters.
SMD - 2
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
ESD Class: 3B per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
51
32.5
204
300
2.4
±20
500
51
30
7.3
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
3.3 (Typical)
g
For footnotes refer to the last page
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1
03/26/14
IRHNA7160, JANSR2N7432U
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
100
—
—
V
VGS =0 V, ID = 1.0mA
—
0.11
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
2.0
16
—
—
—
—
—
—
—
—
0.040
0.045
4.0
—
25
250
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
310
53
110
35
150
150
130
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
5300
1600
350
—
—
—
Ω
V
S
µA
nA
nC
ns
nH
pF
Test Conditions
VGS = 12V, ID = 32.5A „
VGS = 12V, ID = 51A
VDS = VGS, ID = 1.0mA
VDS >= 15V, IDS = 32.5A „
VDS = 80V,VGS = 0V
VDS = 80V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 51A
VDS = 50V
VDD = 50V, ID = 51A,
VGS = 12V, RG = 2.35Ω
Measured from center of drain
pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
51
204
1.8
520
6.5
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 51A, VGS = 0V Ã
Tj = 25°C, IF = 51A, di/dt ≥ 100A/µs
VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJPCB
Junction-to-Case
Junction-to-PC Board
Min Typ Max
—
—
—
1.6
0.42
—
Units
°C/W
Test Conditions
Solder to a 1” sq. copper clad PC Board
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNA7160, JANSR2N7432U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
VSD
100K Rads(Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage Ã
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Diode Forward Voltage Ã
300K-1000KRads(Si)2
Min
Max
Min
Max
100
2.0
—
—
—
—
—
4.0
100
-100
25
0.045
100
1.25
—
—
—
—
—
4.5
100
-100
50
0.062
—
1.8
—
1.8
Test Conditions
Units
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS = 80V, VGS = 0V
VGS = 12V, ID = 32.5A
V
nA
µA
Ω
V
VGS = 0V, IS = 51A
1. Part number IRHNA7160 (JANSR2N7432U)
2. Part numbers IRHNA3160 (JANSF2N7432U), IRHNA4160 (JANSG2N7432U) and IRHNA8160 (JANSH2N7432U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
(MeV/(mg/cm2))
28
36.8
Energy
(MeV)
285
305
Range
VDS(V)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
43
100
100
100
80
60
39
100
90
70
50
—
120
100
VDS
80
Cu
Br
60
40
20
0
0
-5
-10
-15
-20
-25
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA7160, JANSR2N7432U
1000
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
100
5.0V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
10
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
TJ = 25 ° C
TJ = 150 ° C
10
V DS = 50V
20µs PULSE WIDTH
5
6
7
8
9
10
11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
100
Fig 2. Typical Output Characteristics
1000
1
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
20µs PULSE WIDTH
TJ = 150 °C
5.0V
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
TOP
12
ID = 51A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
10000
20
6000
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
8000
C, Capacitance (pF)
IRHNA7160, JANSR2N7432U
Ciss
4000
Coss
2000
Crss
0
1
10
ID = 51A
16
12
8
4
0
100
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
VDS , Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
100
TJ = 150 ° C
10
TJ = 25 ° C
VGS = 0 V
1.0
1.5
2.0
2.5
3.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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120
160
200
240
280
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
0.5
80
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1
0.0
VDS = 80V
VDS = 50V
VDS = 20V
3.5
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100µs
1ms
10
10ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
DC
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNA7160, JANSR2N7432U
Pre-Irradiation
60
RD
VDS
50
V GS
D.U.T.
ID , Drain Current (A)
RG
+
- VDD
40
V GS
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS
10
0
90%
25
50
75
100
125
150
TC , Case Temperature ( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.1
0.01
0.001
0.00001
0.20
0.10
0.05
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNA7160, JANSR2N7432U
L
D.U.T
RG
VGS
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
TOP
1000
15V
VDS
EAS , Single Pulse Avalanche Energy (mJ)
1200
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
BOTTOM
ID
23A
32A
51A
800
600
400
200
0
25
50
75
100
125
Starting TJ , Junction Temperature( ° C)
150
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.2µF
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNA7160, JANSR2N7432U
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 0.38mH
Peak IL = 51A, VGS = 12V
 ISD ≤ 51A, di/dt ≤ 410A/µs,
VDD ≤ 100V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
80 volt VDS applied and V GS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-2
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Data and specifications subject to change without notice. 03/2014
8
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