Intersil IRF9640 11a, 200v, 0.500 ohm, p-channel power mosfet Datasheet

IRF9640, RF1S9640SM
Data Sheet
11A, 200V, 0.500 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon-gate
power field-effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers and as drivers for
other high-power switching devices. The high input
impedance allows these types to be operated directly from
integrated circuits.
Formerly developmental type TA17522.
Ordering Information
PART NUMBER
PACKAGE
July 1999
File Number
2284.2
Features
• 11A, 200V
• rDS(ON) = 0.500Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
BRAND
D
IRF9640
TO-220AB
IRF9640
RF1S9640SM
TO-263AB
RF1S9640
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9640SM9A.
G
S
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN (FLANGE)
4-33
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IRF9640, RF1S9640SM
TC = 25oC, Unless Otherwise Specified
Absolute Maximum Ratings
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 3, 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRF9640, RF1S9640SM
-200
-200
-11
-7
-44
±20
125
1
790
-55 to 150
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = -250µA, VGS = 0V (Figure 10)
-200
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = -250µA
-2
-
-4
V
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
µA
Zero Gate Voltage Drain Current
IDSS
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
On-State Drain Current (Note 2)
ID(ON)
Gate to Source Leakage Current
IGSS
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
rDS(ON)
gfs
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Qg(TOT)
Qgs
Gate to Drain “Miller” Charge
Qgd
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Internal Drain Inductance
LD
-
-
250
-11
-
-
A
-
-
±100
nA
ID = -6A, VGS = -10V (Figures 8, 9)
-
0.350
0.500
Ω
VDS > ID(ON) x rDS(ON)MAX, ID = -6A (Figure 12)
4
6
-
S
VDD = 0.5 x Rated BVDSS, ID ≈ -11A, RG = 9.1Ω
VGS = -10V (Figures 17, 18)
RL = 8.4Ω for VDSS = -100V
RL = 6.1Ω for VDSS = -75V
MOSFET Switching Times are Essentially Independent of Operating Temperature
-
18
22
ns
-
45
68
ns
-
75
90
ns
-
29
44
ns
VGS = -10V, ID = -11A, VDS = 0.8 x Rated BVDSS
Ig(REF) = -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-
70
90
nC
-
55
-
nC
-
15
-
nC
VDS = -25V, VGS = 0V, f = 1MHz
(Figure 11)
-
1100
-
pF
-
375
-
pF
-
150
-
pF
Measured From the
Contact Screw on Tab To
Center of Die
-
3.5
-
nH
-
4.5
-
nH
-
7.5
-
nH
-
-
1.0
oC/W
-
-
62.5
oC/W
VDS > ID(ON) x rDS(ON)MAX, VGS = -10V
VGS = ±20V
Measured From the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
Internal Source Inductance
LS
Measured From the Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad
Modified MOSFET
Symbol Showing the Internal Devices
Inductances
D
LD
G
LS
S
Thermal Resistance Junction to Case
RθJC
Thermal Resistance Junction to Ambient
RθJA
4-34
Typical Socket Mount
IRF9640, RF1S9640SM
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Continuous Source to Drain Current
ISD
Pulse Source to Drain Current
(Note 3)
TEST CONDITIONS
MIN
TYP
MAX
-
-
-11
A
-
-
-44
A
TJ = 25oC, ISD = -11A, VGS = 0V (Figure 13)
-
-
-1.5
V
TJ = 150oC, ISD = -11A, dISD/dt = 100A/µs
TJ = 150oC, ISD = -11A, dISD/dt = 100A/µs
-
300
-
ns
-
1.9
-
µC
Modified MOSFET Symbol Showing the Integral
Reverse
P-N Junction Diode
ISDM
UNITS
D
G
S
Source to Drain Diode Voltage (Note 2)
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
QRR
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 9.8mH, RG = 25Ω, peak IAS = 11A. See Figures 15, 16.
Typical Performance Curves
Unless Otherwise Specified
-15
ID, DRAIN CURRENT (A)
1.0
-10
0.8
0.6
0.4
-5
0.2
0
0
50
100
150
0
0
TC, CASE TEMPERATURE (oC)
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
ZθJC, NORMALIZED
TRANSIENT THERMAL IMPEDANCE
POWER DISSIPATION MULTIPLIER
1.2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
PDM
0.05
0.02
0.01
0.01
10-5
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
10-4
10-3
10-2
10-1
t 1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-35
1
10
IRF9640, RF1S9640SM
Typical Performance Curves
Unless Otherwise Specified (Continued)
-100
-50
100µs
-10
1ms
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
-1
100ms
DC
TC = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = -9V
-30
VGS = -8V
-20
VGS = -7V
VGS = -6V
-10
VGS = -5V
TJ = MAX RATED
SINGLE PULSE
-0.1
-1
-100
VDS, DRAIN TO SOURCE VOLTAGE (V)
-1000
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = -7V
-12
VGS = -6V
-8
VGS = -5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
-50
VDS ≥ I D(ON) x rDS(ON)
VGS = -8V
-4
-10
-20
-30
-40
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
100
PULSE DURATION = 80µs VGS = -10V
DUTY CYCLE = 0.5% MAX
VGS = -9V
-16
VGS = -4V
0
-10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-20
VGS = -10V
-40
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
10µs
VGS = -11V
-10
125oC
25oC
-1.0
-55oC
VGS = -4V
0
0
-4
-2
-6
-8
-10
-0.1
-2
-4
-6
-8
VGS, GATE TO SOURCE VOLTAGE (V)
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE (Ω)
FIGURE 7. TRANSFER CHARACTERISTICS
5µs PULSE TEST
0.8
0.7
VGS = -10V
0.6
0.5
0.4
0.3
VGS = - 20V
0.2
0
0
-15
-30
-45
-60
-75
ID, DRAIN CURRENT (A)
NOTE:
2.5
VGS = -10V, ID = -6A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
0.0
-40
0
40
80
120
TJ , JUNCTION TEMPERATURE (oC)
Heating effect of 5µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
4-36
-10
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
160
IRF9640, RF1S9640SM
Typical Performance Curves
Unless Otherwise Specified (Continued)
2000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
ID = 250µA
1.10
1600
C, CAPACITANCE (pF)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.15
1.05
1.00
0.95
CISS
1200
800
COSS
400
0.90
CRSS
0.85
-80
-40
0
40
80
120
0
160
10
0
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
-100
TJ = -55oC
ISD, DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE (S)
8
TJ = 25oC
TJ = 125oC
6
30
40
50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TJ = 150oC
-10
TJ = 25oC
-1.0
-0.1
0
-10
-20
-30
-40
-50
-0.6
-0.4
I D , DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
VGS, GATE TO SOURCE (V)
-0.8
-1.4
-1.0
-1.2
-1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
ID = -11A
-5
VDS = -40V
VDS = -100V
-10
VDS = -160V
0
20
40
60
80
Qg(TOT), Total GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-37
-1.8
IRF9640, RF1S9640SM
Test Circuits and Waveforms
VDS
tAV
L
0
VARY tP TO OBTAIN
-
RG
REQUIRED PEAK IAS
+
VDD
DUT
0V
VDD
tP
VGS
IAS
IAS
VDS
tP
0.01Ω
BVDSS
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON
tOFF
td(OFF)
td(ON)
tr
0
-
DUT
VGS
VDS
VDD
90%
90%
VGS
0
+
10%
10%
RL
RG
tf
10%
50%
50%
PULSE WIDTH
90%
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
-VDS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
0
VDS
DUT
12V
BATTERY
0.2µF
50kΩ
0.3µF
Qgs
Qg(TOT)
DUT
G
VGS
Qgd
D
VDD
0
S
Ig(REF)
IG CURRENT
SAMPLING
RESISTOR
0
+VDS
ID CURRENT
SAMPLING
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
4-38
Ig(REF)
FIGURE 20. GATE CHARGE WAVEFORMS
IRF9640, RF1S9640SM
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4-39
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