IRF OM50N05ST Low voltage, low rds(on) power mosfets in hermetic isolated package Datasheet

OM60N06SA OM60N05SA OM50N06ST
OM50N06SA OM50N05SA OM50N05ST
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE
50V And 60V Ultra Low RDS(on)
Power MOSFETs In TO-257 And TO-254
Isolated Packages
FEATURES
•
•
•
•
•
Isolated Hermetic Metal Packages
Ultra Low RDS(on)
Low Conductive Loss/Low Gate Charge
Available Screened To MIL-S-19500, TX, TXV And S Levels
Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate charge simpler drive circuitry.
MAXIMUM RATINGS (Per Device)
PART NO.
OM60N06SA
OM50N06SA
OM50N06ST
OM60N05SA
OM50N05SA
OM50N05ST
VDS (V)
60
60
60
50
50
50
SCHEMATIC
Drain
RDS(on) ( )
.025
.030
.035
.025
.030
.035
ID (A)
60
50
50
60
50
50
T-3 PIN
CONNECTION
Package
TO-254AA
TO-254AA
TO-257AA
TO-254AA
TO-254AA
TO-257AA
3.1
M-PAK PIN
CONNECTION
1 2 3
Gate
1
Source
4 11 R1
Supersedes 3 02 R0
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
3.1 - 65
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
2
3
OM60N06SA - OM50N05ST
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
60N06SA
50N06ST
50N05SA
60N05SA
50N05ST
50N05SA
Units
VDS
Drain-Source Voltage
60
60
50
50
V
VDGR
Drain-Gate Voltage (RGS = 1 M )
60
60
50
50
V
VGS
Gate-Source Voltage, Continuous
+20
+20
+20
+20
V
ID @ TC = 25°C
Continuous Drain
Current2
55
50
55
50
A
ID @ TC = 100°C
Continuous Drain Current2
37
33
37
33
A
IDM
Pulsed Drain Current1
220
200
220
200
A
PD @ TC = 25°C
Maximum Power Dissipation
100
100
100
100
W
PD @ TC = 100°C
Maximum Power Dissipation
40
40
40
40
W
Junction-To-Case
Linear Derating Factor1
.80
.80
.80
.80
W/°C
TJ
Operating and
-55 to 150
-55 to 150
Tstg
Storage Temperature Range
300
300
Lead Temperature (1/16" from case for 10 secs.)
-55 to 150 -55 to 150
300
300
°C
°C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 1.5%.
2 Package Limited SA ID = 25 A, SC SC I D = 35 A @ 25° C
THERMAL RESISTANCE
RthJC
Junction-to-Case
1.25
°C/W
PACKAGE LIMITATIONS
Parameters
ID
TO254AA
Continuous Drain Current
Unit
25
15
A
.020
.015
W/°C
Thermal Resistance, Junction-to-Ambient (Free Air Operation)
50
65
°C/W
Linear Derating, Junction-to-Case
0.8
0.8
W/°C
Linear Derating Factor, Junction-to-Ambient
RthJA
TO-257AA
3.1
PACKAGE OPTIONS
T-3 MECHANICAL OUTLINE
M-PAK MECHANICAL OUTLINE
MOD PAK
Z-TAB
Notes:
• Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the
part number. Example - OMXXXXCSA.
• MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information.
3.1 - 66
6 PIN SIP
OM60N06SA - OM50N05ST
3.1
3.1 - 67
OM60N06SA - OM50N05ST
3.1
3.1 - 68
OM60N06SA - OM50N05ST
3.1
3.1 - 69
OM60N06SA - OM50N05ST
Switching Times Test Circuits
For Resistive Load
Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
TYPICAL CHARACTERISTICS
Gate Charge vs Gate-Source Voltage
Capacitance Variations
Normalized Gate Threshold
Voltage vs Temperature
Normalized On Resistance
vs Temperature
3.1
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