DSK MBR2030CT Schottky barrier rectifier Datasheet

Diode Semiconductor Korea
MBR2030CT - - - MBR2060CT
VOLTAGE RANGE: 30 - 60 V
CURRENT: 20 A
SCHOTTKY BARRIER RECTIFIERS
FEATURES
2.8± 0.1
TO-220AB
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
4.5± 0.2
10.2± 0.2
1.4± 0.2
φ 3.8± 0.15
19.0± 0.5
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
1
8.9± 0.2
Metal s ilicon junction, m ajority carrier conduction.
PIN
2 3
2.6± 0.2
3.5± 0.3
13.8± 0.5
MECHANICAL DATA
Cas e:JEDEC TO-220AB,m olded plas tic body
0.9± 0.1
Term inals :Solderable per MIL-STD-750,
1 1
0.5± 0.1
2.5± 0.1
Method 2026
Polarity: As m arked
PIN 1
Positive CT
Pos ition: Any
PIN 1
PIN 1
PIN 3
CASE
PIN 2
PIN 3
Negative CT
Suffix "A"
Weight: 0.071ounce, 2.006 grams
CASE
PIN 2
PIN 3
Doubler
Suffix "D"
CASE
PIN 2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBR
2030CT
MBR
2035CT
MBR
2040CT
MBR
2045CT
MBR
2050CT
MBR
2060CT
UNITS
Maximum recurrent peak reverse voltage
V RRM
30
35
40
45
50
60
V
Maximum RMS V oltage
V RMS
21
25
28
32
35
42
V
Maximum DC blocking voltage
V DC
30
35
40
45
50
60
V
Maximum average forw ard total device
m rectified current @TC = 120°C
IF(AV)
20
A
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
IFSM
250
A
Maximum forw ard
(IF=10A,TC=25
voltage
(IF=10A,TC=125
(Note 1)
(IF=20A,TC=25
(I F =20A,T C =125
Maximum reverse current
at rated DC blocking voltage
)
)
)
VF
)
@TC =25
@TC =100
IR
0.57
0.75
0.70
0.84
0.72
0.95
0.85
0.1
0.1
15
50
mA
Maximum thermal resistance (Note2)
R θJC
2.0
Operating junction temperature range
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 150
Storage temperature range
V
/W
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
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Diode Semiconductor Korea
MBR2030CT - - - MBR2060CT
FIG.2 -- FORWARD DERATING CURVE
AVERAGE FORWARD OUTPUT CURRENT,
AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 -- PEAK FORWARD SURGE CURRENT
150
120
8.3ms Single Half Sine Wave
TJ=125
90
60
30
0
1
10
100
20
16
12
8
4
0
0
30
NUMBER OF CYCLES AT 60HZ
MBR2050CT-MBR2060CT
.2
.4
.6
.8
1.0
1 .2
1 .4
1 .6
1 .8
2.0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
2.2
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
INSTANTANEOUS FORWARD CURRENT,
AMPERES
MBR2030CT-MBR2045CT
TJ =25
Pulse width=300 S
1% Duty Cycle
1
120
150
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
200
10
90
CASE TEMPERATURE,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
100
60
10
MBR2050CT-MBR2060CTTc=100℃
MBR2030CT- MBR2045CT
1.0
MBR2050CT-MBR2060CT
0.1
TC=25℃
MBR2030CT -MBR2045CT
.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
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