Fairchild FJT44 Npn epitaxial silicon transistor Datasheet

FJT44
tm
NPN Epitaxial Silicon Transistor
•
High Voltage Transistor
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T =25°C unless otherwise noted
a
Value
Units
VCBO
Symbol
Collector-Base Voltage
Parameter
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
300
mA
PC
Collector Dissipation
2
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature Range
- 55 ~ +150
°C
(Ta = 25 oC)
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T =25°C unless otherwise noted
a
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient
Value
Units
62.5
°C/W
* Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm. mounting pad for the collector lead min. 6 cm 2
Electrical Characteristics*
Symbol
Ta = 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC = 100uA, IE = 0
500
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 1mA, IB = 0
400
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 100µA, IC = 0
6
V
ICBO
Collector-Base Cutoff Current
VCB = 400V IE = 0
100
nA
ICES
Collector-Emitter Cutoff Current
VCE = 400V, VBE = 0
500
nA
IEBO
Emitter-Base Cutoff Current
VCE = 4V, IC = 0
100
nA
hFE
DC Current Gain
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
40
50
45
40
200
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 1mA, IB = 0.1mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
0.4
0.5
0.75
V
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1mA
0.75
V
Cobo
Output Capacitance
VCB = 20V, IE = 0, f = 1MHz
7
pF
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2006 Fairchild Semiconductor Corporation
FJT44 Rev. B
1
www.fairchildsemi.com
FJT44 NPN Epitaxial Silicon Transistor
September 2006
10
160
VCC=150V
IC/IB=10
o
Ta=25 C
VBE(off)=4V
VCE=10V
140
100
80
t[us], TIME
hFE, DC CURRENT GAIN
120
60
40
1
20
0
tf
-20
td
-40
1
10
100
1000
0.1
10000
1
10
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Turn-On Switching Times
1000
100
o
VCC=150V
IC/IB=10
Ta=25℃
Cib[pF],Cob[pF], CAPACITANCE
Ta=25 C
f=1MHz
t[us], TIME
10
ts
1
tf
100
Cib
1
10
Cob
10
1
0.1
0.1
100
Figure 3. Turn-Off Switching Times
10
100
1000
Figure 4. Capacitance
1.0
0.5
VCE[V] COLLECTOR EMITTER VOLTAGE
o
Ta=25 C
0.8
VBE(sat) @IC/IB=10
[V], VOLTAGE
1
VCB[V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
0.6
VBE(on) @VCE=10V
0.4
0.2
0.0
0.1
VCE(sat)@IC/IB=10
1
10
100
o
IC=10mA
IC=1mA
IC=50mA
Ta=25 c
0.4
0.3
0.2
0.1
0.0
10
1000
IC[mA], COLLECTOR CURRENT
100
1000
10000
100000
IC[mA], COLLECTOR CURRENT
Figure 5. On Voltage
Figure 6. Collector Saturation Region
2
FJT44 Rev. B
100
IC[mA], COLLECTOR CURRENT
www.fairchildsemi.com
FJT44 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
FJT44 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
hFE, SMALL SIGNAL CURRENT GAIN
100
VCE=10V
f=10MHz
o
Ta=25 C
10
1
0.1
0.1
1
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 1. High Frequency Current Gain
3
FJT44 Rev. B
www.fairchildsemi.com
FJT44 NPN Epitaxial Silicon Transistor
Mechanical Dimensions
3.00 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.89)
(0.95)
(0.46)
1.60 ±0.20
2.30 TYP
7.00 ±0.30
(0.60)
0.70 ±0.10
(0.95)
+0.04
0.06 –0.02
(0.60)
3.50 ±0.20
1.75 ±0.20
MAX1.80
0.65 ±0.20
0.08MAX
SOT-223
°
10
+0.10
0.25 –0.05
0°~
Dimensions in Millimeters
4
FJT44 Rev. B
www.fairchildsemi.com
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FAST®
FASTr™
FPS™
FRFET™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
UniFET™
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be reasonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
5
FJT44 Rev. B
www.fairchildsemi.com
FJT44 NPN Epitaxial Silicon Transistor
TRADEMARKS
Similar pages