Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42086 • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz • High Gain at 1 dB Compression: 13.5 dB Typical G1 dB at 2.0 GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Description Agilent’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085" diameter Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.” plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. 86 Plastic Package Pin Connections EMITTER 4 420 Features BASE 1 The AT-42086 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. COLLECTOR 3 2 EMITTER 2 AT-42086 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Absolute Maximum[1] 1.5 20 12 80 500 150 -65 to 150 Units V V V mA mW °C °C Thermal Resistance [2,4]: θjc = 140°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 7.1 mW/°C for TC > 80°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Part Number Ordering Information Part Number Increment Comments AT-42086-BLK AT-42086-TR1 100 1000 Bulk Reel Note: For more information, see “Tape and Reel Packaging for Semiconductor Devices”. Electrical Specifications, TA = 25°C Symbol |S 21E |2 Parameters and Test Conditions Units Min. Typ. 15.0 16.5 10.5 4.5 Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz dB f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz dBm G1 dB Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA dB GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz fT Gain Bandwidth Product: VCE = 8 V, IC = 35 mA hFE ICBO IEBO CCB Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz P1 dB Note: 1. For this test, the emitter is grounded. 20.5 20.0 13.5 9.0 dB 1.9 3.5 13.0 9.0 dB GHz — µA µA pF Max. 8.0 30 150 0.32 270 0.2 2.0 3 AT-42086 Typical Performance, TA = 25°C 20 20 2.0 GHz G1dB 8 MSG 30 12 2.0 GHz 8 4.0 GHz GAIN (dB) P1dB 12 G1 dB (dB) 35 16 4.0 GHz 16 25 20 MAG 15 |S21E|2 10 4 4.0 GHz 5 4 0 10 20 30 40 0 50 IC (mA) 21 GA 12 4 9 3 NFO 3 0 0.5 2 1 1.0 2.0 0 3.0 4.0 5.0 FREQUENCY (GHz) Figure 4. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10 mA. NFO (dB) 15 6 10 20 30 40 50 Figure 2. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. 24 18 0 0 IC (mA) Figure 1. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. GAIN (dB) 40 1.0 GHz 2.0 GHz |S21E|2 GAIN (dB) P1 dB (dBm) 24 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. 4 AT-42086 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .68 -48 28.0 25.12 153 0.5 .63 -141 20.9 11.07 102 1.0 .63 -176 15.4 5.87 80 1.5 .65 164 12.0 3.98 65 2.0 .66 151 9.5 2.99 53 2.5 .69 142 7.8 2.44 45 3.0 .71 132 6.2 2.04 34 3.5 .73 123 4.8 1.74 24 4.0 .75 115 3.6 1.51 14 4.5 .78 108 2.6 1.34 5 5.0 .80 101 1.6 1.20 -4 5.5 .82 95 0.6 1.08 -12 6.0 .85 89 -0.2 0.97 -21 dB -36.0 -29.9 -27.4 -26.0 -23.9 -23.1 -21.6 -19.7 -18.3 -17.2 -16.0 -14.8 -14.0 S12 Mag. .016 .032 .043 .050 .064 .070 .084 .104 .122 .138 .159 .182 .200 Ang. 65 42 43 46 52 53 54 53 51 50 46 40 35 Mag. .91 .54 .43 .40 .38 .36 .34 .33 .30 .31 .31 .32 .34 S22 dB -37.7 -32.6 -28.7 -24.8 -23.0 -21.0 -19.7 -18.4 -17.3 -15.9 -15.2 -14.3 -13.4 S12 Mag. .013 .023 .037 .057 .071 .089 .104 .121 .136 .161 .174 .193 .213 Ang. 65 57 62 64 61 56 58 55 49 46 43 36 31 Mag. .77 .39 .33 .31 .29 .26 .25 .24 .20 .21 .21 .22 .25 Ang. -15 -30 -30 -34 -40 -46 -54 -67 -80 -94 -110 -129 -148 AT-42086 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 35 mA S21 Freq. S11 GHz Mag. Ang. dB Mag. Ang. 0.1 .48 -94 32.8 43.62 137 0.5 .57 -168 22.4 13.21 92 1.0 .59 168 16.5 6.69 75 1.5 .61 154 13.0 4.48 62 2.0 .63 143 10.5 3.36 51 2.5 .68 137 8.7 2.72 43 3.0 .68 127 7.0 2.25 33 3.5 .71 118 5.7 1.92 24 4.0 .73 111 4.5 1.69 14 4.5 .76 104 3.5 1.49 5 5.0 .78 98 2.4 1.32 -3 5.5 .81 91 1.6 1.20 -12 6.0 .84 85 0.7 1.08 -20 A model for this device is available in the DEVICE MODELS section. AT-42086 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz NFO dB 0.1 0.5 1.0 2.0 4.0 1.0 1.1 1.5 1.9 3.5 Γopt Mag .04 .03 .06 .25 .58 Ang 8 62 168 -146 -100 RN/50 0.13 0.12 0.12 0.12 0.52 S22 Ang. -25 -28 -27 -31 -37 -45 -53 -65 -80 -95 -115 -136 -156 5 86 Plastic Package Dimensions 0.51 ± 0.13 (0.020 ± 0.005) 4 45° C L 3 2.34 ± 0.38 (0.092 ± 0.015) 1 2 1.52 ± 0.25 (0.060 ± 0.010) 2.67 ± 0.38 (0.105 ± 0.15) 5° TYP. 0.66 ± 0.013 (0.026 ± 0.005) 0.203 ± 0.051 (0.006 ± 0.002) 8° MAX 0° MIN 2.16 ± 0.13 (0.085 ± 0.005) 0.30 MIN (0.012 MIN) DIMENSIONS ARE IN MILLIMETERS (INCHES) www.semiconductor.agilent.com Data subject to change. Copyright © 1999 Agilent Technologies 5965-8914E (11/99)