PHILIPS BUW11F Silicon diffused power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BUW11F; BUW11AF
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 14
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT199 package.
ook, halfpage
APPLICATIONS
• Converters
2
handbook, halfpage
• Inverters
• Switching regulators
1
• Motor control systems.
MBB008
3
PINNING
PIN
DESCRIPTION
1
base
2
collector
3
emitter
mb
1
2
Front view
mounting base;
electrically isolated
3
MSB012
Fig.1 Simplified outline (SOT199) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
PARAMETER
collector-emitter peak voltage
CONDITIONS
MAX.
UNIT
VBE = 0
BUW11F
850
V
BUW11AF
1000
V
BUW11F
400
V
BUW11AF
450
V
1.5
V
3
A
collector-emitter voltage
VCEsat
collector-emitter saturation voltage
ICsat
collector saturation current
open base
BUW11F
2.5
A
IC
collector current (DC)
BUW11AF
see Figs 2 and 4
5
A
ICM
collector current (peak value)
tp < 20 ms; see Fig.2
10
A
Ptot
total power dissipation
Th ≤ 25 °C; see Fig.3
32
W
tf
fall time
resistive load; see Figs 8 and 9
0.8
µs
1997 Aug 14
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
THERMAL CHARACTERISTICS
SYMBOL
Rth j-h
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to external heatsink note 1
3.95
K/W
note 2
3.05
K/W
35
K/W
thermal resistance from junction to ambient
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCESM
VCEO
ICsat
PARAMETER
collector-emitter peak voltage
CONDITIONS
MIN.
MAX.
UNIT
VBE = 0
BUW11F
−
850
V
BUW11AF
−
1000
V
BUW11F
−
400
V
BUW11AF
−
450
V
−
3
A
collector-emitter voltage
open base
collector saturation current
BUW11F
−
2.5
A
IC
collector current (DC)
see Figs 2 and 4
−
5
A
ICM
collector current (peak value)
tp < 20 ms; see Fig.2
−
10
A
BUW11AF
IB
base current (DC)
−
2
A
IBM
base current (peak value)
tp < 20 ms
−
4
A
Ptot
total power dissipation
Th ≤ 25 °C; see Fig.3; note 1
−
32
W
Th ≤ 25 °C; see Fig.3; note 2
−
41
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
VisolM
isolation voltage from all terminals to external heatsink (peak value)
−
1500
V
Cisol
isolation capacitance from collector to external heatsink
−
21
pF
1997 Aug 14
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VCEOsust
PARAMETER
ICES
collector-emitter sustaining voltage
BUW11F
BUW11AF
collector-emitter saturation voltage
BUW11F
BUW11AF
base-emitter saturation voltage
BUW11F
BUW11AF
collector saturation current
BUW11F
BUW11AF
collector-emitter cut-off current
IEBO
hFE
emitter-base cut-off current
DC current gain
VCEsat
VBEsat
ICsat
CONDITIONS
IC = 100 mA; IBoff = 0; L = 25 mH;
see Figs 5 and 6
MIN.
TYP.
MAX.
UNIT
400
450
−
−
−
−
V
V
IC = 3 A; IB = 600 mA
IC = 2.5 A; IB = 500 mA
−
−
−
−
1.5
1.5
V
V
IC = 3 A; IB = 600 mA
IC = 2.5 A; IB = 500 mA
VCE = 1.5 V
−
−
−
−
1.4
1.4
V
V
−
−
−
−
−
−
−
−
3
2.5
1
2
A
A
mA
mA
−
10
10
−
18
20
10
35
35
mA
ICon = 3 A; IBon = −IBoff = 600 mA
ICon = 2.5 A; IBon = −IBoff = 500 mA
−
−
−
−
1
1
µs
µs
ICon = 3 A; IBon = −IBoff = 600 mA
ICon = 2.5 A; IBon = −IBoff = 500 mA
−
−
−
−
4
4
µs
µs
ICon = 3 A; IBon = −IBoff = 600 mA
ICon = 2.5 A; IBon = −IBoff = 500 mA
−
−
−
−
0.8
0.8
µs
µs
ICon = 3 A; IB = 600 mA;
VCL = 250 V; Tc = 100 °C
ICon = 2.5 A; IB = 500 mA;
VCL = 300 V; Tc = 100 °C
−
2
2.5
µs
−
2
2.5
µs
ICon = 3 A; IB = 600 mA;
VCL = 250 V; Tc = 100 °C
ICon = 2.5 A; IB = 500 mA;
VCL = 300 V; Tc = 100 °C
−
200
300
ns
−
200
300
ns
VCE = VCESMmax; VBE = 0; note 1
VCE = VCESMmax; VBE = 0;
Tj = 125 °C; note 1
VEB = 9 V; IC = 0
VCE = 5 V; IC = 5 mA; see Fig.7
VCE = 5 V; IC = 0.5 A; see Fig.7
Switching times resistive load (Figs 8 and 9)
ton
ts
tf
turn-on time
BUW11F
BUW11AF
storage time
BUW11F
BUW11AF
fall time
BUW11F
BUW11AF
Switching times inductive load (Figs 10 and 11)
ts
storage time
BUW11F
BUW11AF
tf
fall time
BUW11F
BUW11AF
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 14
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
handbook, full pagewidth
BUW11F; BUW11AF
MGB930
102
IC
(A)
ICM max
10
IC max
II
1
10−1
I
10−2
BUW11F
BUW11AF
10−3
10−4
1
10
102
Mounted without heatsink compound and 30 ±5 N force on centre of package.
Tmb < 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.2 Forward bias SOAR.
1997 Aug 14
5
103
VCE (V)
104
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
MGK674
MGB894
5
120
handbook,
halfpage
handbook, halfpage
IC
(A)
Ptot max
4
(%)
80
3
2
40
BUW11F
BUW11AF
1
0
0
0
50
100
Th (oC)
0
150
400
800
VCE (V) 1200
VBE = −1 to −5 V; Tc ≤ 100 °C.
Fig.3 Power derating curve.
andbook, halfpage
Fig.4 Reverse bias SOAR.
handbook,IC
halfpage
+ 50 V
MGE239
(mA)
100 to 200 Ω
250
L
200
horizontal
oscilloscope
100
vertical
6V
30 to 60 Hz
Fig.5
1997 Aug 14
300 Ω
1Ω
0
MGE252
Test circuit for collector-emitter
sustaining voltage.
Fig.6
6
VCE (V)
min
VCEOsust
Oscilloscope display for collector-emitter
sustaining voltage.
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
MBC095
2
10halfpage
handbook,
VCC
handbook, halfpage
hFE
VCE = 5 V
1V
RL
VIM
10
RB
0
D.U.T.
tp
MGE244
T
1
10−2
10−1
1
102
10
IC (A)
VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.
The values of RB and RL are selected in accordance with ICon and
IBon requirements.
Tj = 125 °C.
Fig.7 DC current gain; typical values.
handbook, halfpage
Fig.8 Test circuit resistive load.
MBB731
tr ≤30 ns
IB on
90%
IB
10%
VCC
andbook, halfpage
t
IB off
LC
+IB
IC on
90%
VCL
LB
D.U.T.
−VBE
IC
MGE246
10%
ton
tf
t
ts
VCL = up to 1000 V; VCC = 30 V; VBE = −1 V to −5 V; LB = 1 µH;
LC = 200 µH.
tr ≤ 20 ns.
Fig.9
1997 Aug 14
Switching time waveforms with
resistive load.
Fig.10 Test circuit inductive load and reverse
bias SOAR.
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
handbook, halfpage
BUW11F; BUW11AF
tr
IB on
90%
IB
10%
t
−IB off
IC on
90%
IC
10%
ts
toff
t
tf
MGE238
Fig.11 Switching time waveforms with
inductive load.
1997 Aug 14
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
PACKAGE OUTLINE
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads (in-line)
SOT199
E
E1
m
A
A1
P
α
q
D
L1
Q
b1
L
1
2
3
e
b
c
w M
e1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
E
E1
e
e1
L
mm
5.2
4.8
3.4
3.0
1.2
1.0
2.1
1.9
0.6
0.5
21.5
20.5
15.3
14.7
7.8
6.8
5.45
10.9
16.5
15.7
L1
(1)
3.7
3.3
m
P
Q
q
w
α
0.8
0.6
3.3
3.1
2.1
1.9
6.2
5.8
0.4
45°
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT199
1997 Aug 14
EUROPEAN
PROJECTION
ISSUE DATE
97-06-27
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 14
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
NOTES
1997 Aug 14
11
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© Philips Electronics N.V. 1997
SCA55
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137067/00/01/pp12
Date of release: 1997 Aug 14
Document order number:
9397 750 02718
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