Microsemi JAN2N4399 Pnp high power silicon transistor Datasheet

TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/433
Devices
Qualified Level
2N4399
JANTX
JANTXV
2N5745
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA =+ 250C (1)
@ TC = +1000C (2)
Operating & Storage Junction Temperature Range
Symbol
2N4399
2N5745
Unit
VCEO
VCBO
VEBO
IB
IC
PT
60
60
80
80
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
TJ, Tstg
5.0
7.5
30
20
5.0
115
-55 to +200
TO-3*
(TO-204AA)
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
3
Thermal Resistance,
1)
2)
Junction-to-Case
RθJC
0.875
Junction-to-Ambient
RθJA
35
0
C/W
Derate linearly @ 28.57 mW/0C for TA > +250C
Derate linearly @ 1.15 W/0C for TC > +1000C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
2N4399
2N5745
V(BR)CEO
60
80
2N4399
2N5745
ICEO
100
100
µAdc
2N4399
2N5745
ICEX
5.0
5.0
µAdc
IEBO
5.0
µAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc
VCE = 80 Vdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc, VBE = 1.5 Vdc
VCE = 80 Vdc, VBE = 1.5 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Vdc
120101
Page 1 of 2
2N4399, 2N5745 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
hFE
40
15
15
5.0
5.0
425
60
60
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 2.0 Vdc
IC = 15 Adc, VCE = 2.0 Vdc
IC = 10 Adc, VCE = 2.0 Vdc
IC = 30 Adc, VCE = 5.0 Vdc
IC = 20 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
IC = 10 Adc, IB = 1.0 Adc
Base-Emitter Saturation Voltage
IC = 10 Adc, IB = 1.0 Adc
IC = 15 Adc, IB = 1.5 Adc
2N4399
2N5745
2N4399
2N5745
2N4399
2N5745
2N4399
2N5745
VCE(sat)
0.55
0.75
1.0
Vdc
VBE(sat)
1.7
1.8
2.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
hfe
4.0
40
hfe
40
425
Cobo
1000
pF
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 6.67 Vdc, IC = 30 Adc
2N4399
VCE = 10 Vdc, IC = 20 Adc
2N5745
Test 2
VCE = 20 Vdc, IC = 10 Adc
All Types
Test 3
VCE = 40 Vdc, IC = 3.0 Adc
All Types
Test 4
VCE = 50 Vdc, IC = 600 mAdc
2N4399
VCE = 60 Vdc, IC = 600 mAdc
2N5745
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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