IXYS IXTA4N80P Polarhv power mosfet n-channel enhancement mode avalanche rated Datasheet

Advance Technical Information
PolarHVTM
Power MOSFET
IXTA4N80P
IXTP4N80P
VDSS = 800
= 3.6
ID25
RDS(on) ≤ 3.4
V
A
Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
VGSS
VGSM
Continuous
Transient
ID25
IDM
Maximum Ratings
800
V
800
V
± 30
± 40
V
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
3.6
8
A
A
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
2
20
250
A
mJ
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 18 Ω
10
V/ns
PD
TC = 25°C
100
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
300
°C
260
°C
1.13/10 Nm/lb.in.
4
g
3
g
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
(TO-220)
TO-220
TO-263
TO-263 (IXTA)
G
(TAB)
TO-220 (IXTP)
G
BVDSS
VGS = 0 V, ID = 250 μA
800
VGS(th)
VDS = VGS, ID = 100μA
3.0
IGSS
VGS = ±30 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
© 2006 IXYS CORPORATION All rights reserved
(TAB)
D = Drain
TAB = Drain
Features
z
Characteristic Values
Min. Typ.
Max.
D S
G = Gate
S = Source
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
S
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
V
5.5
V
±100
nA
5
150
μA
μA
3.4
Ω
Advantages
z
z
z
Easy to mount
Space savings
High power density
DS99596E(08/06)
IXTA4N80P
IXTP4N80P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
2.5
4.0
S
750
pF
70
pF
Crss
6.3
pF
td(on)
22
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
24
ns
td(off)
RG = 18 Ω (External)
60
ns
29
ns
14.2
nC
4.8
nC
4.8
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
1.25 °C/W
RthJC
RthCS
TO-263 (IXTA) Outline
(TO-220)
Source-Drain Diode
°C/W
0.25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive
VSD
IF = IS, VGS = 0 V
trr
IF = 3.5 A, -di/dt = 100 A/μs,
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
3.5
A
8
A
1.5
V
560
TO-220 (IXTP) Outline
ns
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change
limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXTA4N80P
IXTP4N80P
Fig. 2. Output Characteristics
@ 125ºC
Fig. 1. Extended Output Characteristics
@ 25ºC
6
3.5
V GS = 10V
8V
5
V GS = 10V
7V
3
7V
I D - Amperes
I D - Amperes
2.5
4
3
6V
2
1.5
2
1
6V
1
0.5
0
5V
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
V DS - Volts
V DS - Volts
Fig. 4. R DS(on) Normalized to ID = 2A Value
v s. Drain Current
Fig. 3. R DS(on) Normalized to ID = 2A Value
vs. Junction Temperature
2.6
3
2.8
V GS = 10V
V GS = 10V
2.4
TJ = 125ºC
2.6
2.2
R DS(on) - Normalized
R DS(on) - Normalized
2.4
2.2
2
1.8
I D = 3.6A
1.6
1.4
I D = 1.8A
1.2
1
2
1.8
1.6
1.4
1.2
TJ = 25ºC
0.8
1
0.6
0.4
0.8
-50
-25
0
25
50
75
100
125
150
0
1
2
Fig. 5. Maximum Drain Current v s.
Case Temperature
4
5
6
6.5
7
Fig. 6. Input Admittance
4
4
3.5
3.5
3
3
I D - Amperes
I D - Amperes
3
I D - Amperes
T J - Degrees Centigrade
2.5
2
1.5
2.5
2
1.5
1
1
0.5
0.5
0
TJ = 125ºC
25ºC
-40ºC
0
-50
-25
0
25
50
75
T C - Degrees Centigrade
© 2006 IXYS CORPORATION All rights reserved
100
125
150
4
4.5
5
5.5
V GS - Volts
6
IXTA4N80P
IXTP4N80P
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
Fig. 7. Transconductance
7
12
11
TJ = - 40ºC
6
10
9
TJ = 25ºC
I S - Amperes
g f s - Siemens
5
4
TJ = 125ºC
3
8
7
6
5
TJ = 125ºC
4
2
3
TJ = 25ºC
2
1
1
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0.4
0.5
0.6
I D - Amperes
Fig. 9. Gate Charge
0.8
0.9
Fig. 10. Capacitance
10
10,000
f = 1 MHz
V DS = 400V
9
Capacitance - PicoFarads
I D = 1.8A
8
I G = 10mA
C iss
1,000
7
V GS - Volts
0.7
V SD - Volts
6
5
4
3
100
C oss
10
C rss
2
1
0
1
0
1
2
3
4
5
6
7
8
9
10 11
12 13 14 15
0
5
10
Q G - NanoCoulombs
15
20
25
30
35
40
V DS - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
10.00
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse W idth - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_4N80P (3J) 10-23-06.xls
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