Linear LS831 Ultra low leakage low drift monolithic dual n-channel jfet Datasheet

LS830 LS831 LS832 LS833
ULTRA LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated Systems
FEATURES
ULTRA LOW DRIFT
|∆VGS1-2 /∆T|= 5µV/°C max.
ULTRA LOW LEAKAGE
IG = 80fA TYP.
LOW NOISE
en= 70nV/√Hz TYP.
LOW CAPACITANCE
CISS= 3pf MAX.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
S1
G2
G1
-65° to +150°C
+150°C
D1
Maximum Voltage and Current for Each Transistor NOTE 1
Gate Voltage to Drain or Source
40V
-VGSS
-VDSO
Drain to Source Voltage
40V
-IG(f)
Gate Forward Current
10mA
-IG
Gate Reverse Current
10µA
5
S2
D1 2
D2
G1
6 D2
1
S1
7
G2
S2
22 X 20 MILS
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
3
BOTTOM VIEW
40mW @ +125°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS830 LS831 LS832
5
10
20
|∆VGS1-2 /∆T| max. Drift vs. Temperature
LS833
75
UNITS
µV/°C
CONDITIONS
VDG= 10V
ID= 30µA
TA= -55°C to +125°C
|VGS1-2| max.
Offset Voltage
25
25
25
25
mV
-IG max
Operating
0.1
0.1
0.1
0.5
pA
-IG max
High Temperature
0.1
0.1
0.1
0.5
nA
-IGSS
At Full Conduction
0.2
0.2
0.2
1.0
pA
-IGSS
High Temperature
0.5
0.5
0.5
1.0
nA
SYMBOL
BVGSS
CHARACTERISTICS
Breakdown Voltage
BVGGO
VDG= 10V
ID= 30µA
TA= +125°C
VGS= 0
TA= +125°C
VGS= -20V
MIN.
40
TYP.
60
MAX.
--
UNITS
V
CONDITIONS
VDS= 0
ID= 1nA
Gate-to-Gate Breakdown
40
--
--
V
IG= 1nA
ID= 0
I S= 0
Yfss
Yfs
TRANSCONDUCTANCE
Full Conduction
Typical Operation
70
50
300
100
500
200
µmho
µmho
VDG= 10V
VDG= 10V
VGS= 0
ID= 30µA
f= 1kHz
f= 1kHz
|Yfs1-2/Yfs|
Mismatch
--
1
5
%
Full Conduction
60
400
1000
µA
VDG= 10V
VGS= 0
|IDSS1-2/IDSS|
Mismatch at Full Conduction
--
2
5
%
VGS(off) or VP
VGS
GATE VOLTAGE
Pinchoff Voltage
Operating Range
0.6
--
2
--
4.5
4
V
V
VDS= 10V
VDG= 10V
ID= 1nA
ID= 30µA
IGGO
GATE CURRENT
Gate-to-Gate Leakage
--
1
--
pA
VGG= 20V
DRAIN CURRENT
IDSS
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
SYMBOL
YOSS
CHARACTERISTICS
OUTPUT CONDUCTANCE
Full Conduction
--
--
5
µmho
YOS
Operating
--
--
0.5
µmho
|YOS1-2|
Differential
COMMON MODE REJECTION
-20 log |∆VGS1-2/∆VDS|
--
--
0.1
µmho
--
90
--
dB
--
90
--
dB
∆VDS= 5 to 10V
NF
-20 log |∆VGS1-2/∆VDS|
NOISE
Figure
--
--
1
dB
en
Voltage
--
20
70
nV/√Hz
VDS= 10V
f= 100Hz
VDG= 10V
NBW= 1Hz
VGS= 0
RG= 10MΩ
NBW= 6Hz
ID= 30µA f= 10Hz
CISS
CAPACITANCE
Input
--
--
3
pF
VDS= 10V
VGS= 0
f= 1MHz
CRSS
Reverse Transfer
--
--
1.5
pF
VDS= 10V
VGS= 0
f= 1MHz
CDD
Drain-to-Drain
--
--
0.1
pF
VDG= 10V
ID= 30µA
CMR
CMR
MIN.
TO-71
TYP.
MAX. UNITS
0.230
DIA.
0.209
0.030
MAX.
0.150
0.115
6 LEADS
0.500 MIN.
0.019 DIA.
0.016
0.305
0.335
MAX.
0.040 0.165
0.185
MIN. 0.500
0.016
0.021
DIM. B
VGS= 0
VDG= 10V
ID= 30µA
∆VDS= 10 to 20V
ID= 30µA
ID= 30µA
0.320 (8.13)
0.290 (7.37)
0.335
0.370
0.016
0.019
DIM. A
VDG= 10V
P-DIP
TO-78
Six Lead
0.195
DIA.
0.175
CONDITIONS
SEATING
PLANE
0.405
(10.29)
MAX.
S1
D1
SS
G1
1
2
3
4
8
7
6
5
G2
SS
D2
S2
0.200
0.100
0.050
5
6
45°
0.046
0.036
7
SOIC
2 3 4
1
5
8 7 6
2 3 4
1
8
0.100
0.029
0.045
0.150 (3.81)
0.158 (4.01)
0.100
45°
0.048
0.028
0.188 (4.78)
0.197 (5.00)
0.028
0.034
S1
D1
SS
G1
1
2
3
4
8
7
6
5
G2
SS
D2
S2
0.228 (5.79)
0.244 (6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
Similar pages