IXYS DSEK60-02 Common cathode fast recovery epitaxial diode (fred) Datasheet

DSEK 60
Common Cathode
Fast Recovery
Epitaxial Diode (FRED)
VRSM
VRRM
V
V
200
200
200
200
IFAVM = 2x 34 A
VRRM = 200 V
trr
= 35 ns
ISOPLUS 247TM
TO-247 AD
Type
Version A
A
DSEK 60-02A
DSEK 60-02AR
C
A
Version AR
A
C
A
A
C
A
C (TAB)
A = Anode, C = Cathode
Symbol
Test Conditions
Maximum Ratings per leg
IFRMS
IFAVM ÿÿ①
IFRM
TVJ = TVJM
TC = 115°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
50
34
375
A
A
A
●
IFSM
TVJ = 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
325
350
A
A
●
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
290
310
A
A
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
530
510
A2s
A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
420
400
A2s
A2s
-40...+150
150
-40...+150
°C
°C
°C
125
W
TVJ
TVJM
Tstg
Ptot
TC = 25°C
Md *
FC
Mounting torque
mounting force with clip
VISOL **
50/60 Hz, RMS, t = 1 minute, leads-to-tab
0.8...1.2
20...120
2500
Nm
N
* Patent pending
Features
●
●
●
I2t
Isolated
back surface *
●
●
●
International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behavior
Epoxy meets UL 94V-0
Version AR isolated and
UL registered E153432
Applications
●
●
●
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
V~
Advantages
6
g
●
* Verson A only; ** Version AR only
●
Symbol
Test Conditions
Characteristic Values per leg
typ.
max.
IR
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR
VR
VR
= VRRM
= 0.8 • VRRM
= 0.8 • VRRM
200
50
5
mA
mA
mA
VF
IF = 30 A;
TVJ
TVJ
= 150°C
= 25°C
0.85
1.10
V
V
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.72
4.2
V
mW
1
K/W
K/W
RthJC
RthCH
0.25
trr
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C
35
50
ns
IRM
VR = 100 V; IF = 30 A; -diF/dt = 100 A/ms
L £ 0.05 mH; TVJ = 25°C
4
5
A
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747 refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
●
●
●
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
036
Weight
1-2
DSEK 60, 200V
120
A
0.8
100
Qr
30
TVJ= 100°C
VR = 100V
µC
TVJ= 100°C
A V = 100V
R
25
IRM
0.6
IF
80
IF= 15A
IF= 35A
IF= 70A
20
60
IF= 15A
IF= 35A
IF= 70A
0.4
TVJ=150°C
TVJ=100°C
TVJ= 25°C
40
15
10
0.2
20
5
0
0.0
0.4
0.0
10
1.2 V
0.8
100
VF
Fig. 1 Forward current IF versus VF
Fig. 2 Typ. reverse recovery charge Qr
versus -diF/dt
1.6
70
ns
trr
Kf
0
200
ms 1000
600 A/
800
-diF/dt
400
Fig. 3 Typ. peak reverse current IRM
versus -diF/dt
6
TVJ= 100°C
VR = 100V
60
1.4
0
A/ms 1000
-diF/dt
V
tfr
5
1.2
µs
1.5
VFR
VFR
50
1.8
TVJ= 100°C
IF = 35A
tfr
4
1.2
3
0.9
2
0.6
1
0.3
40
1.0
30
0.8
IRM
0.6
IF= 15A
IF= 35A
IF= 70A
20
10
Qr
0.4
0
0
40
80
120 °C 160
0
200
400
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
600 A/
800
ms
-diF/dt
Fig. 5 Typ. recovery time trr
versus -diF/dt
1.2
K/W
Dimensions
1.0
0.8
ZthJC
0.6
0.4
0.2
0.0
0.001
0
1000
DSEK 60-02
0.01
0.1
s
1
t
10
0
200
400
600
diF/dt
0.0
A/800
ms
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF/dt
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D*
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
2.2
2.54
0.087
0.102
* ISOPLUS 247 TM without hole
Fig. 7 Transient thermal impedance junction to case
© 2000 IXYS All rights reserved
2-2
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