Zetex FZT796 Pnp silicon planar medium power high gain transistor Datasheet

SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
FZT796A
1.0
ISSUE 3 - OCTOBER 1995
FEATURES
* 200 Volt VCEO
* Gain of 250 at IC=0.3 Amps
* Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE FZT696B
PARTMARKING DETAIL FZT796A
0.8
ABSOLUTE MAXIMUM RATINGS.
TYPICAL CHARACTERISTICS
1.8
1.6
- (Volts)
1.4
IC/IB=40
IC/IB=20
IC/IB=10
1.8
Tamb=25°C
1.0
0.8
0.6
0.6
0.4
0.4
V
V
1.4
1.2
- (Volts)
1.2
0.2
0
0.001
0.01
0.1
1
-55°C
+25°C
+100°C
+175°C
1.6
0.2
0
0.001
10
VCE=10V
750
500
0.8
0.6
250
0.4
0.2
0.01
0.1
1.4
IC/IB=10
C
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-200
V
Collector-Emitter Voltage
VCEO
-200
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-1
A
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
0.8
0.6
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
V(BR)CBO
-200
V
IC=-100µ A
V(BR)CEO
-200
V
IC=-10mA*
-5
Emitter-Base
V(BR)EBO
V
IE=-100µ A
ICBO
-0.1
µA
VCB=-150V
Emitter Cut-Off Current
IEBO
-0.1
µA
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.2
-0.3
-0.3
V
V
V
IC=-50mA, IB=-2mA*
IC=-100mA, IB=-5mA*
IC=-200mA, IB=-20mA*
0.01
0.1
1
10
1
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
DC
1s
100ms
10ms
1ms
100µs
0.01
C
0.01
0.1
1
0.001
10
IC - Collector Current (Amps)
°C
Collector Cut-Off Current
IC - Collector Current (Amps)
I -Collector Current (A)
V
- (Volts)
1.4
-55 to +150
0.2
0
VCE=10V
W
PARAMETER
-0.95
Base-EmitterSaturationVoltage VBE(sat)
-55°C
+25°C
+100°C
A
2
0.4
IC - Collector Current (Amps)
1.6
-0.5
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
1.0
10
1
10
1.2
- (Volts)
1.0
0
1
-55°C
+25°C
+100°C
+175°C
1.6
V
1.4
1.2
+100°C
+25°C
-55°C
- Typical Gain
1.6
0.1
IC - Collector Current (Amps)
h
h
- Normalised Gain
IC - Collector Current (Amps)
0.01
IC/IB=20
FZT796A
1
10
100
VCE - Collector Emitter Voltage (V)
Safe Operating Area
1000
Base-EmitterTurn-OnVoltage
VBE(on)
Static Forward Current
Transfer Ratio
hFE
300
300
250
100
Transition Frequency
fT
100
Input Capacitance
Cibo
Output Capacitance
Cobo
Switching Times
ton
toff
-0.67
V
IC=-200mA,IB=-20mA*
V
IC=-200mA,VCE=-10V*
800
IC=-10mA, VCE=-10V*
IC=-100mA, VCE=-10V*
IC=-300mA, VCE=-10V*
IC=-400mA, VCE=-10V*
MHz
IC=-50mA, VCE=-5V
f=50MHz
225
pF
VEB=-0.5V, f=1MHz
12
pF
VCB=-10V, f=1MHz
100
3200
ns
ns
IC=-100mA, IB1=-10mA
IB2=-10mA, VCC=-50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 256
3 - 255
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
FZT796A
1.0
ISSUE 3 - OCTOBER 1995
FEATURES
* 200 Volt VCEO
* Gain of 250 at IC=0.3 Amps
* Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE FZT696B
PARTMARKING DETAIL FZT796A
0.8
ABSOLUTE MAXIMUM RATINGS.
TYPICAL CHARACTERISTICS
1.8
1.6
- (Volts)
1.4
IC/IB=40
IC/IB=20
IC/IB=10
1.8
Tamb=25°C
1.0
0.8
0.6
0.6
0.4
0.4
V
V
1.4
1.2
- (Volts)
1.2
0.2
0
0.001
0.01
0.1
1
-55°C
+25°C
+100°C
+175°C
1.6
0.2
0
0.001
10
VCE=10V
750
500
0.8
0.6
250
0.4
0.2
0.01
0.1
1.4
IC/IB=10
C
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-200
V
Collector-Emitter Voltage
VCEO
-200
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-1
A
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
0.8
0.6
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
V(BR)CBO
-200
V
IC=-100µ A
V(BR)CEO
-200
V
IC=-10mA*
-5
Emitter-Base
V(BR)EBO
V
IE=-100µ A
ICBO
-0.1
µA
VCB=-150V
Emitter Cut-Off Current
IEBO
-0.1
µA
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.2
-0.3
-0.3
V
V
V
IC=-50mA, IB=-2mA*
IC=-100mA, IB=-5mA*
IC=-200mA, IB=-20mA*
0.01
0.1
1
10
1
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
DC
1s
100ms
10ms
1ms
100µs
0.01
C
0.01
0.1
1
0.001
10
IC - Collector Current (Amps)
°C
Collector Cut-Off Current
IC - Collector Current (Amps)
I -Collector Current (A)
V
- (Volts)
1.4
-55 to +150
0.2
0
VCE=10V
W
PARAMETER
-0.95
Base-EmitterSaturationVoltage VBE(sat)
-55°C
+25°C
+100°C
A
2
0.4
IC - Collector Current (Amps)
1.6
-0.5
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
1.0
10
1
10
1.2
- (Volts)
1.0
0
1
-55°C
+25°C
+100°C
+175°C
1.6
V
1.4
1.2
+100°C
+25°C
-55°C
- Typical Gain
1.6
0.1
IC - Collector Current (Amps)
h
h
- Normalised Gain
IC - Collector Current (Amps)
0.01
IC/IB=20
FZT796A
1
10
100
VCE - Collector Emitter Voltage (V)
Safe Operating Area
1000
Base-EmitterTurn-OnVoltage
VBE(on)
Static Forward Current
Transfer Ratio
hFE
300
300
250
100
Transition Frequency
fT
100
Input Capacitance
Cibo
Output Capacitance
Cobo
Switching Times
ton
toff
-0.67
V
IC=-200mA,IB=-20mA*
V
IC=-200mA,VCE=-10V*
800
IC=-10mA, VCE=-10V*
IC=-100mA, VCE=-10V*
IC=-300mA, VCE=-10V*
IC=-400mA, VCE=-10V*
MHz
IC=-50mA, VCE=-5V
f=50MHz
225
pF
VEB=-0.5V, f=1MHz
12
pF
VCB=-10V, f=1MHz
100
3200
ns
ns
IC=-100mA, IB1=-10mA
IB2=-10mA, VCC=-50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 256
3 - 255
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