STMicroelectronics ESM4045DV Npn darlington power module Datasheet

ESM4045DV
NPN DARLINGTON POWER MODULE
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HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW Rth JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
ULTRAFAST FREEWHEELING DIODE
ISOLATED CASE (2500V RMS)
EASY TO MOUNT
LOW INTERNAL PARASITIC INDUCTANCE
APPLICATIONS:
MOTOR CONTROL
■
SMPS & UPS
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DC/DC & DC/AC CONVERTERS
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WELDING EQUIPMENT
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ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V CEV
Parameter
Collector-Emitter Voltage (V BE = -5 V)
V CEO(sus) Collector-Emitter Voltage (I B = 0)
V EBO
IC
I CM
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current (tp = 10 ms)
Value
Uni t
600
V
450
V
7
V
42
63
A
A
Base Current
4
A
I BM
Base Peak Current (t p = 10 ms)
8
A
P t ot
T stg
Total Dissipation at T c = 25 C
St orage Temperature
IB
Tj
V ISO
July 1997
o
150
-55 to 150
W
C
o
Max. Operating Junction Temperature
150
o
C
Insulation W ithstand Voltage (AC-RMS)
2500
o
C
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ESM4045DV
THERMAL DATA
R t hj-ca se
R t hj-ca se
R thc -h
Thermal Resistance Junction-case (transistor)
Thermal Resistance Junction-case (diode)
Thermal Resistance Case-heats ink With Conductive
Grease Applied
Max
Max
0.83
1.5
o
Max
0.05
o
o
C/W
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
I CER #
Collector Cut-off
Current (R BE = 5 Ω)
V CE = V CEV
V CE = V CEV
T j = 100 o C
1.5
20
mA
mA
I CEV #
Collector Cut-off
Current (V BE = -5)
V CE = V CEV
V CE = V CEV
T j = 100 o C
1
13
mA
mA
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
1
mA
I EBO #
V CEO(SUS) * Collector-Emitter
Sustaining Voltage
hFE∗
V CE(sat )∗
V BE(s at)∗
450
I C = 0.2 A
L = 25 mH
V c la mp = 450 V
V
DC Current G ain
I C = 35 A
V CE = 5 V
220
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
IB
IB
IB
IB
1.15
1.3
1.4
1.5
=
=
=
=
25
25
35
35
A
A
A
A
=
=
=
=
0.5 A
0.5 A T j = 100 o C
2A
2A
Tj = 100 o C
2.3
2.3
3
V
V
Base-Emitter
Saturation Voltage
I C = 35 A
I C = 35 A
Rate of Rise of
On-state Collector
V CC = 300 V
I B1 = 0.75 A
RC = 0
tp = 3 µs
o
T j = 100 C
V CE (3 µs) Collector-Emitter
Dynamic Voltage
V CC = 300 V
I B1 = 0.75 A
R C = 12 Ω
o
T j = 100 C
4.5
8
V
VCE (5 µs) Collector-Emitter
Dynamic Voltage
V CC = 300 V
I B1 = 0.75 A
R C = 12 Ω
o
T j = 100 C
2.5
4.5
V
Storage Time
Fall T ime
Cross-over T ime
I C = 25A
V BB = -5 V
V c la mp = 450 V
L = 0.1 mH
V CC = 50 V
R BB = 0.6 Ω
I B1 = 0.5 A
o
Tj = 100 C
3.2
0.25
0.75
5
0.5
1.5
µs
µs
µs
Maximum Collector
Emitter Voltage
Without Snubber
I CW off = 42 A
V BB = -5 V
L = 0.06 mH
T j = 125 o C
I B1 = 2 A
V CC = 50 V
R BB = 0.6 Ω
V F∗
Diode Forward Voltage
I F = 35 A
Tj = 100 C
I RM
Reverse Recovery
Current
V CC = 200 V
IF = 35 A
di F /dt = -200 A/µs L < 0.05 µH
o
T j = 100 C
di C /dt
ts
tf
tc
V CEW
IB = 2 A
IB = 2 A
2
V
V
V
V
2
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
To evaluate the conduction losses of the diode use the following equations:
P = 1.5 IF(AV) + 0.001 I2F(RMS)
VF = 1.5 + 0.001 IF
# See test circuits in databook introduction
2/8
Tj = 100 o C
o
200
250
A/µs
450
V
1.5
1.85
V
20
24
A
ESM4045DV
Safe Operating Areas
Thermal Impedance
Derating Curve
Collector-emitter Voltage Versus
base-emitter Resistance
Collector Emitter Saturation Voltage
Base-Emitter Saturation Voltage
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ESM4045DV
Reverse Biased SOA
Foward Biased SOA
Reverse Biased AOA
Forward Biased AOA
Switching Times Inductive Load
Switching Times Inductive Load Versus
Temperature
4/8
ESM4045DV
Dc Current Gain
Typical VF Versus I F
Peak Reverse Current Versus diF/dt
Turn-on Switching Test Circuit
Turn-on Switching Waveforms
5/8
ESM4045DV
Turn-on Switching Test Circuit
Turn-off Switching Waveforms
Turn-off Switching Test Circuit of Diode
Turn-off Switching Waveform of Diode
6/8
ESM4045DV
ISOTOP MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
11.8
12.2
0.466
0.480
B
8.9
9.1
0.350
0.358
C
1.95
2.05
0.076
0.080
D
0.75
0.85
0.029
0.033
E
12.6
12.8
0.496
0.503
F
25.15
25.5
0.990
1.003
G
31.5
31.7
1.240
1.248
H
4
J
4.1
4.3
0.161
0.169
K
14.9
15.1
0.586
0.594
L
30.1
30.3
1.185
1.193
M
37.8
38.2
1.488
1.503
N
4
O
7.8
0.157
0.157
8.2
0.307
0.322
A
G
B
O
F
E
H
D
N
J
C
K
L
M
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ESM4045DV
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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. ..
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