Diodes DMN3051LDM N-channel enhancement mode mosfet Datasheet

DMN3051LDM
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
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•
•
•
•
•
Low On-Resistance
•
38 mΩ @ VGS = 10V
•
64 mΩ @ VGS = 4.5V
Low Input Capacitance
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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•
•
•
•
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Case: SOT-26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.015 grams (approximate)
SOT-26
TOP VIEW
Maximum Ratings
D
D
S
D
D
G
TOP VIEW
Internal Schematic
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 1)
Symbol
VDSS
VGSS
ID
IDM
Value
30
±20
4.0
16
Units
V
V
A
A
Symbol
PD
RθJA
TJ, TSTG
Value
900
139
-55 to +150
Units
mW
°C/W
°C
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, minimum recommended pad layout on 2oz. Copper pads.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN3051LDM
Document number: DS31523 Rev. 3 - 2
1 of 5
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November 2009
© Diodes Incorporated
DMN3051LDM
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
800
±80
±800
V
nA
1.2
⎯
28
50
2.2
V
38
64
mΩ
IGSS
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(th)
RDS (ON)
⎯
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
|Yfs|
VSD
⎯
⎯
5.2
0.78
⎯
1.16
S
V
Ciss
Coss
Crss
RG
⎯
⎯
⎯
⎯
424
115
81
1.3
⎯
⎯
⎯
⎯
pF
pF
pF
Ω
Total Gate Charge
Qg
⎯
4.3
8.6
⎯
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
⎯
⎯
1.2
2.5
⎯
⎯
Notes:
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = ±20V, VDS = 0V
nA
Static Drain-Source On-Resistance
Test Condition
VDS = VGS, ID = 250μA
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
VDS = 5V, ID = 3.1A
VGS = 0V, IS = 2A
VDS = 5V, VGS = 0V, f = 1.0MHz
VGS = 0V VDS = 0V, f = 1MHz
VDS = 10V, VGS = 4.5V, ID = 10A
VDS = 10V, VGS = 10V, ID = 10A
VDS = 10V, VGS = 10V, ID = 10A
VDS = 10V, VGS = 10V, ID = 10A
nC
4. Short duration pulse test used to minimize self-heating effect.
9.0
6
8.0
VGS = 10V
VGS = 4.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
5
7.0
6.0
5.0
4.0
3.0
VDS = 5V
4
3
2
2.0
VGS = 2.5V
1.0
1
VGS = 3.0V
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DMN3051LDM
Document number: DS31523 Rev. 3 - 2
TA = 85°C
TA = 25°C
TA = -55°C
VGS = 1.8V
0
TA = 150°C
TA = 125°C
3
0
1.5
2.5
VGS, GATE SOURCE VOLTAGE (V)
3.5
Fig. 2 Typical Transfer Characteristics
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© Diodes Incorporated
0.1
0.09
0.08
0.07
0.06
VGS = 4.5V
0.05
0.04
0.03
VGS = 10V
0.02
0.01
0
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.10
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMN3051LDM
0.09
TA = 150°C
0.08
T A = 125°C
0.07
TA = 85°C
0.06
T A = 25°C
0.05
TA = -55°C
0.04
0.03
6
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
6
1.6
1.4
VGS = 10V
ID = 5.8A
1.3
1.2
VGS = 4.5V
ID = 5A
1.1
Ciss
C, CAPACITANCE (pF)
RDS(ON), DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
1.5
1.0
0.9
Coss
Crss
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0
1
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
ID = 250µA
2
1.5
1
0.5
0
-50
T A = 150°C
0.1
Document number: DS31523 Rev. 3 - 2
TA = 125°C
TA = 85°C
0.01
T A = 25°C
T A = -55°C
0.001
0.0001
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMN3051LDM
30
10
3
2.5
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Capacitance
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0.1
0.3
0.5
0.7
0.9
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.1
November 2009
© Diodes Incorporated
DMN3051LDM
Ordering Information
(Note 5)
Part Number
DMN3051LDM-7
Notes:
Case
SOT-26
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
2
3N5 = Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
YM
3N5
2010
X
Mar
3
2011
Y
Apr
4
May
5
2012
Z
Jun
6
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
Package Outline Dimensions
A
SOT-26
Dim Min Max Typ
A
0.35 0.50 0.38
B
1.50 1.70 1.60
C
2.70 3.00 2.80
D
⎯
⎯ 0.95
H
2.90 3.10 3.00
J
0.013 0.10 0.05
K
1.00 1.30 1.10
L
0.35 0.55 0.40
M
0.10 0.20 0.15
0°
8°
α
⎯
All Dimensions in mm
B C
H
K
M
J
L
D
Suggested Pad Layout
E
Z
E
C
G
Dimensions Value (in mm)
Z
3.20
G
1.60
X
0.55
Y
0.80
C
E
Y
2.40
0.95
X
DMN3051LDM
Document number: DS31523 Rev. 3 - 2
4 of 5
www.diodes.com
November 2009
© Diodes Incorporated
DMN3051LDM
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
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acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMN3051LDM
Document number: DS31523 Rev. 3 - 2
5 of 5
www.diodes.com
November 2009
© Diodes Incorporated
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