STMicroelectronics BDX53BFP Silicon power darlington transistor Datasheet

BDX53BFP
®
SILICON POWER DARLINGTON TRANSISTOR
APPLICATIONS:
■ GENERAL PURPOSE SWITCHING AND
AMPLIFIER
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
■ FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
DESCRIPTION
The BDX53BFP is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in T0-220FP fully molded
isolated package. It is intented for use in hammer
drivers, audio amplifiers and other medium power
linear and switching applications.
3
1
2
T0-220FP
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 KΩ
R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
V CBO
V CEO
Collector-Base Voltage (I E = 0)
Collector-Emitter Voltage (I B = 0)
80
80
V
V
V EBO
IC
I CM
Emitter-base Voltage (I C = 0)
Collector Current
Collector Peak Current (repetitive)
5
8
12
V
A
A
Base Current
0.2
A
Total Dissipation at T c ≤ 25 o C
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
29
W
1500
V
IB
P tot
Visol
T stg
Tj
Parameter
February 2003
-65 to 150
150
o
o
C
C
1/4
BDX53BFP
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
4.3
70
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Max.
Unit
I CBO
Collector Cut-off
Current (I E = 0)
Parameter
V CB = 80 V
0.2
mA
I CEO
Collector Cut-off
Current (I B = 0)
V CE = 40 V
0.5
mA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
2
mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
Test Conditions
I C = 100 mA
Min.
Typ.
80
V
V CE(sat) ∗
Collector-emitter
Saturation Voltage
IC = 3 A
I B =12 mA
2
V
V BE(sat) ∗
Base-emitter
Saturation Voltage
IC = 3 A
I B =12 mA
2.5
V
h FE ∗
DC Current Gain
IC = 3 A
V CE = 3 V
VF∗
Parallel Diode Forward I F = 3 A
Voltage
IF = 8 A
2.5
V
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/4
750
1.8
2.5
BDX53BFP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
A
4.4
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
¯
F
F1
L7
1 2 3
L2
L4
3/4
BDX53BFP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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