Fairchild BC183C Npn general purpose amplifer Datasheet

BC183C
NPN General Purpose Amplifer
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings
Symbol
TC=25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
45
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current (DC)
100
mA
PC
Collector Dissipation (Ta=25°C)
350
mW
TSTG , TJ
Storage Junction Temperature Range
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Max
Units
BVCBO
Collector-Base Voltage
IC = 10μA
45
V
BVCEO
Collector-Emitter Voltage
IC = 2mA
30
V
BVEBO
Emitter-Base Voltage
IE = 100μA
6
V
ICBO
Collector Cut-off Current
VCB = 30V
15
nA
IEBO
Emitter Cut-off Current
VEB = 4V
15
nA
hFE
DC Current Gain
VCE = 5V, IC = 10μA
VCE = 5V, IC = 2.0mA
VCE = 5V, IC = 100mA
40
120
80
800
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
0.25
0.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 100mA, IB = 5mA
1.2
V
VBE(on)
Base-Emitter On Voltage
VCE = 5V, IC = 2mA
0.7
V
COB
Output Capacitance
VCE = 10V, f = 1.0MHz
5
pF
fT
Current gain Bandwidth Product
VCE = 5V, IC = 10mA
150
hfe
Small Signal Current Gain
VCE = 5V, IC = 2mA
f = 1KHz
450
NF
Noise Figure
VCE = 5V, IC = 200mA
RG = 2KΩ, f = 1KHz
©2007 Fairchild Semiconductor Corporation
BC183C Rev. A
1
0.55
MHz
900
10
dB
www.fairchildsemi.com
BC183C NPN General Purpose Amplifer
June 2007
VCESAT - COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
1200
VCE = 5.0V
125 °C
1000
800
600
25 °C
400
- 40 °C
200
0
0.01 0.03
0.1 0.3
1
3
10
30
I C - COLLECTOR CURRENT (mA)
100
0.3
0.25
125 °C
0.15
VBEON- BASE-EMITTER ON VOLTAGE (V)
VBESAT - COLLECTOR-EMITTER VOLTAGE (V)
- 40 °C
0.8
25 °C
125°C
β = 10
0.2
0.1
1
10
I C - COLLECTOR CURRENT (mA)
0.1
1
10
I C - COLLECTOR CURRENT (mA)
100
- 40 °C
0.8
25 °C
0.6
125°C
0.4
V CE = 5.0 V
0.2
0.1
1
10
I C - COLLECTOR CURRENT (mA)
5
f = 1.0 MHz
CAPACITANCE (pF)
VCB = 45V
1
50
75
100
125
T A - AMBIE NT TEMP ERATURE ( ° C)
4
3
C
2
C ob
1
0
150
Figure 5. Collector-Cutoff Current
vs Ambient Temperature
0
4
8
12
16
REVERSE BIAS VOLTAGE (V)
20
Figure 6. Input and Output Capacitance
vs Reverse Bias Voltage
2
BC183C Rev. A
40
Figure 4. Base-Emitter ON Voltage
vs Collector Current
10
0.1
25
100
1
Figure 3. Base-Emitter Saturation Voltage
vs Collector Curent
I CBO - COLLE CTOR CURRENT (nA)
- 40 °C
0.05
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
1
0.4
25 °C
0.1
Figure 1. Typical Pulsed Current Gain
vs Collector Current
0.6
β = 10
0.2
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BC183C NPN General Purpose Amplifer
Typical Characteristics
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Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I23
3
BC183C Rev. A
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BC183C NPN General Purpose Amplifer
tm
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