TSKS5400 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description TSKS5400 is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case. The diode is case compatible to the TEKS5400 photodetector, allowing the user to assemble his own optical sensor. Features 14 354 D Side view package with spherical lens D Radiation direction perpendicular to mounting direction D D D D Angle of half sensitivity ϕ = ± 30° Peak wavelength lP = 950 nm Case compatible with TEKS5400 Ordering code: TSKS5400-ESZ (2.54 mm Pin distance) Absolute Maximum Ratings Tamb = 25_C Parameter Reverse voltage Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient Document Number 83780 Rev. A7, 15-Dez-99 Test Conditions tp t x 100 ms x 5 s, 2 mm from body Symbol VR IF IFSM PV Tj Tstg Tstg Tsd RthJA Value 6 100 2 170 100 –25 to +85 –40 to +100 260 450 Unit V mA A mW °C °C °C °C k/W www.vishay.de • FaxBack +1-408-970-5600 1 (5) TSKS5400 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward voltage Reverse voltage Junction capacitance Radiant intensity Radiant power Temp. coefficient of fe Angle of half sensitivity Peak wavelength Spectral bandwidth Rise time Fall time Test Conditions IF = 100 mA, tp 20 ms IR = 10 mA VR =0 V, f = 1 MHz, E = 0 IF = 50 mA, tp 20 ms IF = 50 mA, tp 20 ms IF = 50 mA Symbol VF VVR Cj Ie x x x IF = 50 mA IF = 50 mA IF = 1 A, tp/T = 0.01, tp IF = 1 A, tp/T = 0.01, tp Min Typ 1.3 6 50 2 fe 7 10 –1 ±30 950 50 400 450 TKfe ϕ lp Dl x 10 ms x 10 ms Max 1.7 tr tf Unit V V pF mW/ sr mW %K ° nm nm ns ns Typical Characteristics (Tamb = 25_C unless otherwise specified) 104 IF – Forward Current ( mA ) P V – Power Dissipation ( mW ) 200 150 RthJA 100 50 103 102 101 100 0 10–1 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 14846 0 Figure 1. Power Dissipation vs. Ambient Temperature VFrel – Relative Forward Voltage Forward Current ( mA ) 4 3 1.5 100 RthJA 75 50 25 I F– 2 Figure 3. Forward Current vs. Forward Voltage 125 0 0 14847 1 VF – Forward Voltage ( V ) 94 7996 e 20 40 60 80 Figure 2. Forward Current vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (5) IF = 10 mA 1.3 1.2 1.1 1.0 0.9 0.8 –45 –30 –15 100 Tamb – Ambient Temperature ( °C ) 1.4 14347 0 15 30 45 60 75 90 Tamb – Ambient Temperature ( °C ) Figure 4. Relative Forward Current vs. Ambient Temperature Document Number 83780 Rev. A7, 15-Dez-99 TSKS5400 Vishay Telefunken 1.25 Fe rel – Relative Radiant Power I e – Radiant Intensity ( mW/sr ) 100 10 1 tp / T = 0.001 tp = 100 ms 0.1 1.0 0.75 0.5 0.25 IF = 100 mA 0 900 0.01 100 94 7913 e 101 102 103 IF – Forward Current ( mA ) 104 Figure 5. Radiant Intensity vs. Forward Current Figure 8. Relative Radiant Power vs. Wavelength 0° I e rel – Relative Radiant Intensity Fe – Radiant Power ( mW ) 100.0 10.0 1.0 1000 950 l – Wavelength ( nm ) 94 7994 e 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.1 1 10 100 0.6 1000 IF – Forward Current ( mA ) 13718 0.4 0.2 0 0.2 0.4 0.6 14349 Figure 6. Radiant Power vs. Forward Current Figure 9. Relative Radiant Intensity vs. Angular Displacement 1.6 IF = 10 mA 1.4 I e rel ; Fe rel 1.2 1.0 0.8 0.6 0.4 0.2 0 –45 –30 –15 14348 0 15 30 45 60 75 90 Tamb – Ambient Temperature ( °C ) Figure 7. Relative Radiant Intensity vs. Ambient Temperature Document Number 83780 Rev. A7, 15-Dez-99 www.vishay.de • FaxBack +1-408-970-5600 3 (5) TSKS5400 Vishay Telefunken Dimensions of TSKS5400 in mm 14345 www.vishay.de • FaxBack +1-408-970-5600 4 (5) Document Number 83780 Rev. A7, 15-Dez-99 TSKS5400 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 83780 Rev. A7, 15-Dez-99 www.vishay.de • FaxBack +1-408-970-5600 5 (5)