DRAM MODULE KMM53232004BK/BKG KMM53232004BK/BKG EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53232004B is a 32Mx32bits Dynamic RAM high density memory module. The Samsung KMM53232004B consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53232004B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. • Part Identification PERFORMANCE RANGE • JEDEC standard PDpin & pinout Speed tRAC tCAC tRC tHPC -5 50ns 13ns 84ns 20ns -6 60ns 15ns 104ns 25ns PIN CONFIGURATIONS Pin Symbol Pin Symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 VSS DQ0 DQ18 DQ1 DQ19 DQ2 DQ20 DQ3 DQ21 Vcc NC A0 A1 A2 A3 A4 A5 A6 A10 DQ4 DQ22 DQ5 DQ23 DQ6 DQ24 DQ7 DQ25 A7 A11 Vcc A8 A9 RAS3 RAS2 NC NC 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 NC NC Vss CAS0 CAS2 CAS3 CAS1 RAS0 RAS1 NC W NC DQ9 DQ27 DQ10 DQ28 DQ11 DQ29 DQ12 DQ30 DQ13 DQ31 Vcc DQ32 DQ14 DQ33 DQ15 DQ34 DQ16 NC PD1 PD2 PD3 PD4 NC Vss - KMM53232004BK(4K cycles/64ms Ref, SOJ, Solder) - KMM53232004BKG(4K cycles/64ms Ref, SOJ, Gold) • Extended Data Out Mode Operation • CAS-before-RAS & Hidden Refresh capability • RAS-only refresh capability • TTL compatible inputs and outputs • Single +5V±10% power supply • PCB : Height(1420mil), double sided component PIN NAMES Pin Name Function A0 - A11 Address Inputs DQ0-7, DQ9-16 DQ18-25, DQ27-34 Data In/Out W Read/Write Enable RAS0 - RAS3 Row Address Strobe CAS0 - CAS3 Column Address Strobe PD1 -PD4 Presence Detect Vcc Power(+5V) Vss Ground NC No Connection PRESENCE DETECT PINS (Optional) Pin 50NS 60NS PD1 PD2 PD3 PD4 NC Vss Vss Vss NC Vss NC NC SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. DRAM MODULE KMM53232004BK/BKG FUNCTIONAL BLOCK DIAGRAM CAS0 RAS0 DQ1 CAS DQ2 U0 RAS DQ3 OE W A0-A11 DQ4 DQ1 CAS DQ2 U1 RAS DQ3 OE W A0-A11 DQ4 CAS1 DQ1 CAS DQ2 U2 RAS DQ3 OE W A0-A11 DQ4 DQ1 CAS DQ2 U3 RAS DQ3 OE W A0-A11 DQ4 CAS2 RAS2 DQ1 CAS DQ2 U4 RAS DQ3 OE W A0-A11 DQ4 DQ1 CAS DQ2 U5 RAS DQ3 OE W A0-A11 DQ4 CAS3 DQ1 CAS DQ2 U6 RAS DQ3 OE W A0-A11 DQ4 DQ1 CAS DQ2 U7 RAS DQ3 OE W A0-A11 DQ4 DQ0~DQ3 DQ4~DQ7 DQ9~DQ12 DQ13~DQ16 DQ18~DQ21 DQ22~DQ25 DQ27~DQ30 DQ31~DQ34 DQ1 DQ2 DQ3 DQ4 CAS RAS W A0-A11 OE DQ1 DQ2 DQ3 DQ4 CAS RAS W A0-A11 OE DQ1 DQ2 DQ3 DQ4 CAS RAS W A0-A11 OE DQ1 DQ2 DQ3 DQ4 CAS RAS OE A0-A11 W DQ1 DQ2 DQ3 DQ4 CAS RAS W A0-A11 OE DQ1 DQ2 DQ3 DQ4 CAS RAS W A0-A11 OE DQ1 DQ2 DQ3 DQ4 CAS RAS W A0-A11 OE DQ1 DQ2 DQ3 DQ4 CAS RAS W A0-A11 OE U8 U9 U10 CAS1 U11 U12 CAS2 RAS3 U13 U14 U15 W A0-A11 Vcc 0.1 or 0.22uF Capacitor for each DRAM Vss CAS0 RAS1 To all DRAMs CAS3 DRAM MODULE KMM53232004BK/BKG ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg Pd IOS -1 to +7.0 -1 to +7.0 -55 to +125 16 50 V V °C W mA * Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS (Voltage referenced to V SS, TA = 0 to 70°C) Item Symbol Min VCC VSS VIH VIL 4.5 0 2.4 Supply Voltage Ground Input High Voltage Input Low Voltage -1.0*2 Typ Max Unit 5.0 0 - 5.5 0 V V V V VCC*1 0.8 *1 : VCC+2.0V at pulse width≤20ns, which is measured at VCC. *2 : -2.0V at pulse width≤20ns, whcih is measured at VSS. DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted) Symbol Speed ICC1 KMM53232004BK/BKG Unit Min Max -5 -6 - 976 896 mA mA ICC2 Don′t care - 32 mA ICC3 -5 -6 - 976 896 mA mA ICC4 -5 -6 - 896 816 mA mA ICC5 Don′t care - 16 mA ICC6 -5 -6 - 976 896 mA mA II(L) IO(L) Don′t care -10 -10 10 10 uA uA VOH VOL Don′t care 2.4 - 0.4 V V ICC1 : Operating Current * (RAS, CAS, Address cycling @tRC=min) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3 : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min) ICC4 : Hyper Page Mode Current * (RAS=VIL, CAS cycling : tHPC=min) ICC5 : Standby Current (RAS=CAS=W=Vcc-0.2V) ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) I(IL) : Input Leakage Current (Any input 0≤VIN≤Vcc+0.5V, all other pins not under test=0 V) I(OL) : Output Leakage Current(Data Out is disabled, 0V≤VOUT≤Vcc) VOH : Output High Voltage Level (IOH = -5mA) VOL : Output Low Voltage Level (IOL = 4.2mA) * NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one EDO mode cycle time, tHPC. DRAM MODULE KMM53232004BK/BKG CAPACITANCE (TA = 25°C, VCC=5V, f = 1MHz) Item Symbol Input capacitance[A0-A11] Input capacitance[W] Input capacitance[RAS0 - RAS3] Input capacitance[CAS0 - CAS3] Input/Output capacitance[DQ0-7, 9-16,18-25, 27-34] CIN1 CIN2 CIN3 CIN4 CDQ Min Max Unit - 90 122 38 38 17 pF pF pF pF pF AC CHARACTERISTICS (0°C≤TA≤70°C, Vcc=5.0V±10%. See notes 1,2.) Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V, output loading CL=100pF Parameter Random read or write cycle time Access time from RAS Access time from CAS Access time from column address CAS to output in Low-Z Output buffer turn-off delay from CAS Transition time(rise and fall) RAS precharge time RAS pulse width RAS hold time CAS hold time CAS pulse width RAS to CAS delay time RAS to column address delay time CAS to RAS precharge time Row address set-up time Row address hold time Column address set-up time Column address hold time Column address to RAS lead time Read command set-up time Read command hold referenced to CAS Read command hold referenced to RAS Write command set-up time Write command hold time Write command pulse width Write command to RAS lead time Write command to CAS lead time Data set-up time Data hold time Refresh period CAS setup time (CAS-before-RAS refresh) CAS hold time (CAS-before-RAS refresh) RAS to CAS precharge time Access time from CAS precharge Symbol tRC tRAC tCAC tAA tCLZ tCEZ tT tRP tRAS tRSH tCSH tCAS tRCD tRAD tCRP tASR tRAH tASC tCAH tRAL tRCS tRCH tRRH tWCS tWCH tWP tRWL tCWL tDS tDH tREF tCSR tCHR tRPC tCPA -5 Min -6 Max 84 Min 104 Unit Note ns 50 60 ns 3,4,10 13 15 ns 3,4,5 30 ns 3,10 ns 3 25 3 3 3 13 1 50 30 50 Max 3 13 ns 6,12 1 50 ns 2 40 10K 13 60 ns 10K 15 38 ns ns 45 ns 8 10K 10 10K ns 4 20 37 20 45 ns 9 15 25 15 30 ns 5 5 ns 0 0 ns 10 10 ns 0 0 ns 8 10 ns 25 30 ns 0 0 ns 0 0 ns 8 0 0 ns 8 7 0 0 ns 10 10 ns 10 10 ns 13 15 ns 8 10 ns 0 0 ns 9 8 10 ns 9 64 64 ms 5 5 10 10 ns 5 5 ns 28 ns 35 ns 3 DRAM MODULE KMM53232004BK/BKG AC CHARACTERISTICS (0°C≤TA≤70°C, Vcc=5.0V±10%. See notes 1,2.) Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V, output loading CL=100pF Parameter Hyper page mode cycle time CAS precharge time (Hyper page cycle) RAS pulse width (Hyper page cycle) RAS hold time from CAS precharge W to RAS precharge time(C-B-R refresh) W to RAS hold time(C-B-R refresh) Output data hold time Output buffer turn off delay from RAS Output buffer turn off delay from W W to data delay W pulse width Symbol tHPC tCP tRASP tRHCP tWRP tWRH tDOH tREZ tWEZ tWED tWPE -5 Min -6 Max 20 Min Max 25 8 10 50 200K 60 Unit Note ns 11 ns 200K ns 30 35 ns 10 10 ns 10 10 ns 5 5 ns 3 13 3 15 ns 6,12 3 13 3 15 ns 6 15 15 ns 5 5 ns NOTES 1. An initial pause of 200us is required after power-up followed by any 8 RAS-only or CAS-before-RAS refresh cycles before proper device operation is achieved. 2. Input voltage levels are Vih/Vil. VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to be 5ns for all inputs. 3. Measured with a load equivalent to 2 TTL loads and 100pF. 4. Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC. 5. Assumes that tRCD≥tRCD(max). 6. This parameter defines the time at which the output achieves the open circuit and is not referenced for VOH or VOL. 7. tWCS is non-restrictive operating parameter. It is included in the data sheet as electrical characteristics only. If tWCS≥tWCS(min), the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 8. Either tRCH or tRRH must be satisfied for a read cycle. 9. These parameters are referenced to the CAS leading edge in early write cycles. 10. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as reference point only. If tRAD is greater than the specified tRAD(max) limit access time is controlled by tAA. 11. tASC≥6ns, Assume tT=2.0ns. 12. If RAS goes high before CAS high going, the open circuit condition of the output is achieved by CAS high going. If CAS goes high before RAS high going , the open circuit condition of the output is achieved by RAS going. DRAM MODULE KMM53232004BK/BKG READ CYCLE tRC tRAS RAS VIL - tCSH tCRP CAS tRP VIH - tRCD tCRP tRSH VIH - tCAS VIL - tRAD tASR A VIH VIL - tRAH tRAL tASC tCAH ROW ADDRESS COLUMN ADDRESS tRCH tRCS W tRRH VIH VIL - tWEZ tCEZ tAA OE VIH - tOEZ tOEA VIL - tOLZ DQ VOH VOL - tRAC OPEN tCAC tCLZ tREZ DATA-OUT Don′t care Undefined DRAM MODULE KMM53232004BK/BKG WRITE CYCLE ( EARLY WRITE ) NOTE : DOUT = OPEN tRC tRAS RAS tRP VIH VIL - tCSH tCRP CAS tRSH VIH - VIH VIL - tCRP tCAS VIL - tRAD tASR A tRCD tRAH tASC ROW ADDRESS tRAL tCAH COLUMN ADDRESS tCWL tRWL tWCS W OE VIH VIL - VIH VIL - tDS DQ tWCH tWP VIH VIL - tDH DATA-IN Don′t care Undefined DRAM MODULE KMM53232004BK/BKG WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : DOUT = OPEN tRC tRAS RAS VIL - tCSH tCRP CAS tRP VIH - tRCD tRSH tCAS VIH - tCRP VIL - tRAD tRAL tASR A VIH VIL - tRAH ROW ADDRESS tASC tCAH COLUMN ADDRESS tCWL tRWL W OE tWP VIH VIL - VIH VIL - tOED tDS DQ VIH - tOEH tDH DATA-IN VIL - Don′t care Undefined DRAM MODULE KMM53232004BK/BKG READ - MODIFY - WRITE CYCLE tRWC tRAS RAS VIL - tCRP CAS tRP VIH - tRCD tRSH VIH - tCAS VIL - tRAD tASR tRAH tASC tCAH tCSH A VIH VIL - ROW ADDR COLUMN ADDRESS tAWD tRWL tCWD W tCWL VIH - tWP VIL - tRWD OE tOEA VIH VIL - tOLZ tCLZ tCAC tAA DQ VI/OH VI/OL - tOED tOEZ tRAC VALID DATA-OUT tDS tDH VALID DATA-IN Don′t care Undefined DRAM MODULE KMM53232004BK/BKG HYPER PAGE READ CYCLE tRP tRASP RAS VIH VIL - ¡ó tCSH tCRP CAS VIL - VIL - tHPC tCP tCAS tHPC tCP tCAS tCP tCAS tCAS tRAD tASR A tRCD VIH - VIH - tRHCP tHPC tRAH tASC ROW ADDR tCAH tASC COLUMN ADDRESS tCAH COLUMN ADDRESS tASC tCAH COLUMN ADDR tASC tCAH tREZ COLUMN ADDRESS tRRH tRCS W tRCH VIH - tCPA VIL - tCAC tAA tCPA tCAC tAA OE VIH - tAA tCPA tOCH tOEA tAA tCHO tOEP tOEA VIL - tOEP tCAC tDOH tRAC DQ tCAC tCAC VOH VOL - VALID DATA-OUT tOLZ tCLZ tOEZ tOEA tOEZ tOEZ VALID DATA-OUT VALID DATA-OUT VALID DATA-OUT Don′t care Undefined DRAM MODULE KMM53232004BK/BKG HYPER PAGE WRITE CYCLE ( EARLY WRITE ) NOTE : DOUT = OPEN tRP tRASP RAS VIH - tRHCP VIL - ¡ó tHPC tCRP CAS tRCD tHPC tCP VIH - tCAS VIL - tRSH tCP tCAS tCAS tRAD ¡ó tCSH tASR A VIH VIL - tRAH tASC tCAH VIH - ROW ADDR. COLUMN ADDRESS COLUMN ADDRESS tWCH tWCS tWP tCAH ¡ó COLUMN ADDRESS tWCS ¡ó tWCH tWP VIL - tCWL VIL - VIH VIL - tCWL tRWL ¡ó VIH - ¡ó tDS DQ tASC tWCH tWP tCWL OE tCAH ¡ó tWCS W tASC tDH tDS tDH tDS tDH ¡ó VALID DATA-IN VALID DATA-IN ¡ó VALID DATA-IN Don′t care Undefined DRAM MODULE KMM53232004BK/BKG HYPER PAGE READ-MODIFY-WRITE CYCLE RAS tCSH tHPRWC tRCD tCAS VIL - VIH VIL - tCAS tRAD tRAH ROW ADDR tRAL tCAH tASC tCAH tASC COL. ADDR COL. ADDR tRCS W tCRP tCP VIH - tASR A tRSH VIL - tCRP CAS tRWL tCWL tCWL VIH - tWP VIL - tWP tCWD tCWD tAWD tRWD OE tRP tRASP VIH - VIH - tAWD tCPWD tOEA tOEA VIL - tOED tOED tCAC tAA tDH tOEZ tCAC tAA tDS tDH tOEZ tDS tRAC DQ VI/OH VI/OL - tCLZ tCLZ tOLZ VALID DATA-OUT VALID DATA-IN tOLZ VALID DATA-OUT VALID DATA-IN Don′t care Undefined DRAM MODULE KMM53232004BK/BKG HYPER PAGE READ AND WRITE MIXED CYCLE tRP tRASP RAS VIH - READ(tCAC) READ(tCPA) tHPC tHPC tCP tCP CAS VIH VIL - VIH VIL - tCAS tRAD tASR A tRAH tASC ROW ADDR tCAH COLUMN ADDRESS tRCS W READ(tAA) WRITE VIL - tCAS tRCS tCAH tASC COLUMN ADDRESS tRCH tCAS tCAS tCAH tASC tHPC tCP COL. ADDR tRCH tASC tCAH COL. ADDR tWCH tRCH tWCS VIH VIL - tWPE tCLZ tWED tCPA OE VIH VIL - tOEA tCAC tAA DQ VI/OH VI/OL - tWEZ tDH tWEZ tDS VALID VALID DATA-IN tREZ tAA tRAC VALID DATA-OUT DATA-OUT VALID DATA-OUT Don′t care Undefined DRAM MODULE KMM53232004BK/BKG RAS - ONLY REFRESH CYCLE* NOTE : W, OE, DIN = Don′t care DOUT = OPEN tRC RAS VIH - tRP tRAS VIL - tRPC tCRP CAS VIH VIL - tASR A tCRP VIH VIL - tRAH ROW ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : OE , A = Don′t care tRC tRP RAS VIL - tRPC tCP CAS tRAS VIH - VIH - tRPC tCSR tCHR VIL - tWRP W tRP tWRH VIH VIL - tCEZ DQ VOH VOL - OPEN Don′t care Undefined * In RAS-only refresh cycle of 64Mb A-dile & B-die, when CAS signal transits from Low to High, the valid data may be cut off. DRAM MODULE KMM53232004BK/BKG HIDDEN REFRESH CYCLE ( READ ) tRC RAS tRAS VIH - tRP tRAS VIL - tCRP CAS tRC tRP tRCD tRSH tCHR VIH VIL - tRAD tASR A VIH VIL - tRAH tASC ROW ADDRESS tCAH COLUMN ADDRESS tRCS W tRRH tWRH tWRP VIH VIL - tAA OE VIH - tOEA VIL - tCEZ tOLZ tCAC tREZ tWEZ tCLZ tRAC DQ VOH VOL - OPEN tOEZ DATA-OUT Don′t care Undefined DRAM MODULE KMM53232004BK/BKG HIDDEN REFRESH CYCLE ( WRITE ) NOTE : DOUT = OPEN tRC RAS tRAS VIH - tRP tRAS VIL - tCRP CAS tRC tRP tRCD tRSH tCHR VIH VIL - tRAD tASR A VIH VIL - tRAH tASC ROW ADDRESS tCAH COLUMN ADDRESS tWRH tWRP tWCS W OE VIH VIL - VIH VIL - tDS DQ tWCH tWP VIH VIL - tDH DATA-IN Don′t care Undefined DRAM MODULE KMM53232004BK/BKG CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE tRP RAS CAS VIH - tRAS VIL VIH - tCPT tCSR tRSH tCAS tCHR VIL - tRAL tASC A VIH VIL - READ CYCLE W OE tWRP tWRH tRRH tAA tRCS tRCH tCAC VIH VIL VIH VIL - tOEA tCLZ VOH - DQ tCAH COLUMN ADDRESS tOEZ DATA-OUT VOL - WRITE CYCLE W tCEZ tREZ tWRP tRWL tWRH tCWL tWCS VIH - tWCH VIL - tWP OE VIH VIL - tDS DQ tDH VIH DATA-IN VIL - READ-MODIFY-WRITE tWRP W tWRH tAWD tRCS tCWL tCWD VIH - tRWL tWP tCAC VIL - tAA tOEA OE VIH - tOED VIL - tCLZ DQ tOEZ tDH tDS VI/OH VI/OL VALID DATA-OUT VALID DATA-IN NOTE : This timing diagram is applied to all devices besides 64M DRAM based modules. Don′t care Undefined tWEZ DRAM MODULE KMM53232004BK/BKG CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : OE, A = Don′t care tRP RAS VIL - tRPS tRPC tRPC tCP VIH - CAS tRASS VIH - tCHS tCSR VIL - tCEZ VOH - DQ OPEN VOL - VIH - W VIL - tWRP tWRH TEST MODE IN CYCLE NOTE : OE , A = Don′t care tRC tRP RAS tRP tRAS VIH VIL - tRPC tRPC tCP CAS tCSR VIH - tWTS W tCHR VIL - tWTH VIH VIL - tCEZ DQ VOH VOL - OPEN Don′t care Undefined DRAM MODULE KMM53232004BK/BKG PACKAGE DIMENSIONS Units : Inches (millimeters) 4.250(107.95) 3.984(101.19) .133(3.38) .125 DIA±.002(3.18 ±.051) R.062(1.57) .400(10.16) 1.420(36.07) .250(6.35) .080(2.03) .250(6.35) R.062±.004(R1.57 ±.10) .250(6.35) 3.750(95.25) ( Front view ) .350(8.89) MAX .054(1.37) .047(1.19) ( Back view ) Gold/Solder Plating Lead .100(2.54) .010(.25)MAX MIN .050(1.27) .041±.004(1.04 ±.10) Tolerances : ±.005(.13) unless otherwise specified NOTE : The used device is 16Mx4 DRAM, SOJ DRAM Part No. : KMM53232004BK/BKG -- KM44C16104BK