J/SST174/175/176/177 Series Vishay Siliconix P-Channel JFETs J174 J175 J176 J177 SST174 SST175 SST176 SST177 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST174 J/SST175 5 to 10 85 –10 25 3 to 6 125 –10 25 J/SST176 1 to 4 250 –10 25 J/SST177 0.8 to 2.25 300 –10 25 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D Low On-Resistance: J174 <85 W Fast Switching—tON: 25 ns Low Leakage: –10 pA Low Capacitance: 5 pF Low Insertion Loss Low Error Voltage High-Speed Analog Circuit Performance Negligible “Off-Error,” Excellent Accuracy Good Frequency Response Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally “On” Switches Current Limiters DESCRIPTION The J/SST174 series consists of p-channel analog switches designed to provide low on-resistance and fast switching. This series simplifies series-shunt switching applications when combined with the Siliconix J/SST111 series. The TO-226AA (TO-92) plastic package provides a low-cost option, while the TO-236 (SOT-23) package provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). TO-226AA (TO-92) D TO-236 (SOT-23) 1 D G 3 2 S S 1 G 2 3 Top View Top View J174 J175 J176 J177 SST174 (S4)* SST175 (S5)* SST176 (S6)* SST177 (S7)* *Marking Code for TO-236 For applications information see AN104. Document Number: 70257 S-04030—Rev. E, 04-Jun-01 www.vishay.com 9-1 J/SST174/175/176/177 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C SPECIFICATIONS FOR J/SST174 AND J/SST175 (TA = 25_C UNLESS OTHERWISE NOTED) Limits J/SST174 Parameter Test Conditions Typa Min V(BR)GSS IG = 1 mA , VDS = 0 V 45 30 VGS(off) VDS = –15 V, ID = –10 nA IDSS VDS = –15 V, VGS = 0 V Symbol Max J/SST175 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Drain Cutoff Current IGSS IG ID(off) VGS = 20 V, VDS = 0 V TA = 125_C 0.01 VDG = –15 V, ID = –1 mA 0.01 –0.01 TA = 125_C rDS(on) VGS = 0 V, VDS = –0.1 V Gate-Source Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V 10 3 6 –20 –135 –7 –70 1 1 –1 –1 85 125 V mA 5 VDS = –15 V, VGS = 10 V Drain-Source On-Resistance 30 5 nA –5 W –0.7 V 4.5 mS 20 mS Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Drain-Source On-Resistance VDS = –15 V, ID = –1 mA f = 1 kHz rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz Common-Source Input Capacitance Ciss VDS = 0 V, VGS = 0 V, f = 1 MHz 20 85 Common-Source Reverse Transfer Capacitance Crss VDS = 0 V, VGS = 10 V f = 1 MHz 5 Equivalent Input Noise Voltage en VDG = –10 V, ID = –1 mA f = 1 kHz 20 125 W pF nV⁄ √Hz Switching Turn-On Time td(on) tr Turn-Off Time td(off) 10 VGS(L) = 0 V, VGS(H) = 10 V See Switching Circuit tf Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. www.vishay.com 9-2 15 ns 10 20 PSCIA Document Number: 70257 S-04030—Rev. E, 04-Jun-01 J/SST174/175/176/177 Series Vishay Siliconix SPECIFICATIONS FOR J/SST176 AND J/SST177 (TA = 25_C UNLESS OTHERWISE NOTED) Limits J/SST176 Parameter Test Conditions Typa Min V(BR)GSS IG = 1 mA , VDS = 0 V 45 30 VGS(off) VDS = –15 V, ID = –10 nA IDSS VDS = –15 V, VGS = 0 V Symbol J/SST177 Max Min Max 1 4 0.8 2.25 –2 –35 –1.5 –20 Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Drain Cutoff Current IGSS IG ID(off) VGS = 20 V, VDS = 0 V TA = 125_C 0.01 1 1 –1 –1 250 300 V mA 5 VDG = –15 V, ID = –1 mA 0.01 VDS = –15 V, VGS = 10 V –0.01 TA = 125_C 30 nA –5 W Drain-Source On-Resistance rDS(on) VGS = 0 V, VDS = –0.1 V Gate-Source Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V –0.7 V gfs VDS = –15 V, ID = –1 mA f = 1 kHz 4.5 mS Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance gos rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz mS 20 250 Ciss VDS = 0 V, VGS = 0 V, f = 1 MHz 20 Common-Source Reverse Transfer Capacitance Crss VDS = 0 V, VGS = 10 V f = 1 MHz 5 Equivalent Input Noise Voltage en VDG = –10 V, ID = –1 mA f = 1 kHz 20 300 W pF nV⁄ √Hz Switching td(on) Turn-On Time Turn-Off Time tr td(off) 10 VGS(L) = 0 V, VGS(H) = 10 V See Switching Circuit tf Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. Document Number: 70257 S-04030—Rev. E, 04-Jun-01 15 ns 10 20 PSCIA www.vishay.com 9-3 J/SST174/175/176/177 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage –100 18 250 gfs and gos @ VDS = –15 V VGS = 0 V, f = 1 kHz –80 rDS –60 120 –40 80 40 –20 rDS @ ID = –1 mA, VGS = 0 V IDSS @ VDS = –15 V, VGS = 0 V 0 0 0 2 4 6 8 15 200 gfs 12 9 100 6 50 3 10 0 2 VGS(off) – Gate-Source Cutoff Voltage (V) Output Characteristics rDS(on) – Drain-Source On-Resistance ( Ω ) VGS = 0 V I D – Drain Current (mA) 0.5 V –15 1.0 V –10 1.5 V –5 2.0 V 0 TA = 25_C 200 VGS(off) = 1.5 V 150 3V 100 5V 50 0 –4 0 –8 –12 –16 –20 –1 –10 VDS – Drain-Source Voltage (V) –100 ID – Drain Current (mA) Output Characteristics On-Resistance vs. Temperature –2 300 ID = –1 mA rDS changes X 0.7%/_C VGS = 0 V rDS(on) – Drain-Source On-Resistance ( Ω ) 1.5 V 0.5 V –1.6 I D – Drain Current (mA) 0 10 8 On-Resistance vs. Drain Current 250 –20 1.0 V –1.2 2.0 V –0.8 –0.4 VGS(off) = 3 V 0 0 –0.1 –0.2 –0.3 –0.4 VDS – Drain-Source Voltage (V) www.vishay.com 9-4 6 4 VGS(off) – Gate-Source Cutoff Voltage (V) –25 VGS(off) = 3 V 150 gos g os – Output Conductance ( mS) 160 gfs – Forward Transconductance (mS) IDSS IDSS – Saturation Drain Current (mA) rDS(on) – Drain-Source On-Resistance ( Ω ) 200 –0.5 240 180 VGS(off) = 1.5 V 3V 120 5V 60 0 –55 –35 –15 5 25 45 65 85 105 125 TA – Temperature (_C) Document Number: 70257 S-04030—Rev. E, 04-Jun-01 J/SST174/175/176/177 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Turn-On Switching Turn-Off Switching 20 50 tr approximately independent of ID VDD = –10 V, RG = 220 W VGS(H) = 10 V, VGS(L) = 0 V tf VGS(off) = 1.5 V 40 16 30 tON @ ID = –5 mA Switching Time (ns) Switching Time (ns) 5V tON @ ID = –10 mA 20 10 12 td(off) VGS(off) = 1.5 V 8 5V 4 tr @ ID = –5 mA VDD = –10 V, VGS(H) = 10 V, VGS(L) = 0 V 0 0 0 1 2 3 4 5 0 –3 –6 VGS(off) – Gate-Source Cutoff Voltage (V) –9 Capacitance vs. Gate-Source Voltage VDS = 0 V f = 1 MHz ID = –1 mA 10 nA 24 –10 mA I G – Gate Leakage Capacitance (pF) –15 Gate Leakage Current 100 nA 30 18 Ciss 12 Crss 6 TA = 125_C 1 nA IGSS @ 125_C 100 pA –10 mA 10 pA TA = 25_C 1 pA –1 mA IGSS @ 25_C 0.1 pA 0 0 4 8 12 16 20 0 VGS – Gate-Source Voltage (V) –10 –30 –20 –40 –50 VDG – Drain-Gate Voltage (V) Transfer Characteristics Noise Voltage vs. Frequency –40 100 VGS(off) = 3 V VDS = –15 V ID = –0.1 mA Hz –32 –24 TA = –55_C en – Noise Voltage nV / I D – Drain Current (mA) –12 ID – Drain Current (mA) 25_C –16 –8 125_C 0 –1 mA 10 VDS = –10 V 1 0 1 2 3 VGS – Gate-Source Voltage (V) Document Number: 70257 S-04030—Rev. E, 04-Jun-01 4 5 10 100 1k 10 k 100 k f – Frequency (Hz) www.vishay.com 9-5 J/SST174/175/176/177 Series Vishay Siliconix SWITCHING TIME TEST CIRCUIT VDD VGG 174 175 176 177 –10 V –6 V –6 V –6 V VGG 20 V 12 V 8V 5V RL* 560 W 750 W 1800 W 5600 W RG* 100 W 220 W 390 W 390 W ID(on) –15 mA –7 mA –3 mA –1 mA VDD RL 1.2 kW VGS(H) VGS(L) 0.1 mF RG 7.5 kW *Non-inductive INPUT PULSE Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz SAMPLING SCOPE 51 W 1.2 kW Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF Sampling Scope 51 W 51 W See Typical Characteristics curves for changes. www.vishay.com 9-6 Document Number: 70257 S-04030—Rev. E, 04-Jun-01 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1