VS-8CWH02FN-M3 Vishay Semiconductors Hyperfast Rectifier, 2 x 4 A FRED Pt® FEATURES Base common cathode 2 D-PAK (TO-252AA) • 175 °C max. operating junction temperature • Output rectification freewheeling • Low forward voltage drop reduced Qrr and soft recovery 2 1 • Hyperfast recovery time 3 Common Anode cathode • Low leakage current Anode • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C PRODUCT SUMMARY DESCRIPTION/APPLICATIONS Package D-PAK (TO-252AA) IF(AV) 2x4A VR 200 V VF at IF 0.95 V trr (typ.) 23 ns TJ max. 175 °C Diode variation Common cathode State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 200 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 164 °C 8 Non-repetitive peak surge current per leg IFSM TJ = 25 °C 80 Operating junction and storage temperatures TJ, TStg A - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage per leg SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 4 A - 0.87 0.95 IF = 8 A - 0.95 1.10 IF = 4 A, TJ = 150 °C - 0.71 0.80 IF = 8 A, TJ = 150 °C - 0.8 1.0 IR = 100 μA UNITS V VR = VR rated - - 4 Reverse leakage current per leg IR TJ = 125 °C, VR = VR rated - - 40 TJ = 150 °C, VR = VR rated - - 80 Junction capacitance per leg CT VR = 200 V - 17 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH Document Number: 93261 Revision: 31-Mar-11 μA For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8CWH02FN-M3 Vishay Semiconductors Hyperfast Rectifier, 2 x 4 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS MIN. TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 23 27 TJ = 25 °C - 20 - - 27 - TJ = 125 °C Peak recovery current Reverse recovery charge IRRM Qrr TJ = 25 °C TJ = 125 °C IF = 4 A dIF/dt = 200 A/μs VR = 160 V - 2 - - 3.4 - UNITS ns A TJ = 25 °C - 20 - TJ = 125 °C - 46 - MIN. TYP. MAX. UNITS - 65 - 175 °C - 2.7 3.2 - 1.35 1.6 nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg per leg Thermal resistance, junction to case per device RthJC TEST CONDITIONS Approximate weight Marking device www.vishay.com 2 Case style D-PAK (TO-252AA) °C/W 0.3 g 0.01 oz. 8CWH02FN For technical questions within your region, please contact one of the following: Document Number: 93261 [email protected], [email protected], [email protected] Revision: 31-Mar-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8CWH02FN-M3 Hyperfast Rectifier, 2 x 4 A FRED Pt® Vishay Semiconductors 100 10 Reverse Current - I R (μA) Tj = 175°C Tj = 175°C 10 Tj = 150°C Tj = 125°C 1 Tj = 100°C 0.1 Tj = 75°C 0.01 Tj = 50°C Tj = 25°C 0.001 0.0001 50 100 150 200 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100 1 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 100 Tj = 125°C Tj = 25°C 0.1 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 50 Forward Voltage Drop - VF (V) 100 150 200 Reverse Voltage - VR (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance Z thJC (°C/W) 10 D = 0.5 1 D = 02 D = 0.1 D = 0.05 D = 0.02 Single Pulse (Thermal Resistance) D = 0.01 0.1 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93261 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8CWH02FN-M3 Vishay Semiconductors Hyperfast Rectifier, 2 x 4 A FRED Pt® 180 35 175 30 170 25 trr ( nC ) Allowable Case Temperature (°C) 40 DC 165 Square wave (D=0.50) rated Vr applied 160 4A, Tj = 125°C 20 15 4A, Tj = 25°C 155 10 see note (1) 150 5 0 1 2 3 4 5 6 Average Forward Current - IF(AV)(A) 0 100 1000 di F /dt (A/μs ) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 70 60 RMS Limit 4 4A, Tj = 125°C 50 3 Qrr ( nC ) Average Power Loss ( Watts ) 5 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 2 1 40 30 4A, Tj = 25°C 20 DC 10 0 0 1 2 3 4 5 6 Average Forward Current - IF(AV)(A) 0 100 1000 di F /dt (A/μs ) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 93261 [email protected], [email protected], [email protected] Revision: 31-Mar-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8CWH02FN-M3 Hyperfast Rectifier, 2 x 4 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93261 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8CWH02FN-M3 Vishay Semiconductors Hyperfast Rectifier, 2 x 4 A FRED Pt® ORDERING INFORMATION TABLE Device code VS- 8 C W H 02 FN 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - TRL -M3 8 9 Circuit configuration: C = Common cathode 4 - Package identifier: W = D-PAK 5 - H = Hyperfast recovery 6 - Voltage rating (02 = 200 V) 7 - FN = TO-252AA 8 - None = Tube TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 75 3000 Antistatic plastic tube VS-8CWH02FNTR-M3 2000 2000 13" diameter reel VS-8CWH02FNTRL-M3 3000 3000 13" diameter reel VS-8CWH02FNTRR-M3 3000 3000 13" diameter reel VS-8CWH02FN-M3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95016 Part marking information www.vishay.com/doc?95176 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?95375 www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number: 93261 [email protected], [email protected], [email protected] Revision: 31-Mar-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay High Power Products D-PAK (TO-252AA) DIMENSIONS in millimeters and inches (5) A E b3 Pad layout C A (3) 0.010 M C A B c2 A L3 (3) Ø1 4 Ø2 4 B Seating plane H D (5) 1 2 0.245 MIN. (6.23) D1 L4 3 3 (2) L5 2 b 1 A c b2 0.06 MIN. (1.524) 0.010 M C A B 2x e 0.093 (2.38) 0.085 (2.18) (L1) Detail “C” Rotated 90 °CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 MILLIMETERS MIN. 0.488 (12.40) 0.409 (10.40) 0.089 MIN. (2.28) Detail “C” SYMBOL 0.265 MIN. (6.74) E1 INCHES MAX. MIN. MAX. C Seating plane C Ø L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 3 2.29 BSC INCHES MIN. 2.74 BSC L2 0.51 BSC NOTES 0.090 BSC 0.108 REF. b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.020 BSC 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10° E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15° E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35° 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC outline TO-252AA Document Number: 95016 Revision: 04-Nov-08 For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000