SAMSUNG M391T6453FZ0-CD5

256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
DDR2 Unbuffered SDRAM MODULE
240pin Unbuffered Module based on 256Mb F-die
64/72-bit Non-ECC/ECC
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
DDR2 Unbuffered DIMM Ordering Information
Part Number
Density
Organization
M378T3253FG(Z)3-CE6/D5/CC
256MB
32Mx64
M378T3253FG(Z)0-CE6/D5/CC
256MB
32Mx64
M378T6453FG(Z)3-CE6/D5/CC
512MB
M378T6453FG(Z)0-CE6/D5/CC
512MB
Component Composition
Number of Rank
Height
32Mx8(K4T56083QF)*8
1
30mm
32Mx8(K4T56083QF)*8
1
30mm
64Mx64
32Mx8(K4T56083QF)*16
2
30mm
64Mx64
32Mx8(K4T56083QF)*16
2
30mm
x64 Non ECC
x72 ECC
M391T3253FG(Z)3-CE6/D5/CC
256MB
32Mx72
32Mx8(K4T56083QF)*9
1
30mm
M391T3253FG(Z)0-CE6/D5/CC
256MB
32Mx72
32Mx8(K4T56083QF)*9
1
30mm
M391T6453FG(Z)3-CE6/D5/CC
512MB
64Mx72
32Mx8(K4T56083QF)*18
2
30mm
M391T6453FG(Z)0-CE6/D5/CC
512MB
64Mx72
32Mx8(K4T56083QF)*18
2
30mm
Note: “Z” of Part number(11th digit) stand for Lead-free products.
Note: “3” of Part number(12th digit) stand for Dummy Pad PCB products.
Features
• Performance range
E6(DDR2-667)
D5(DDR2-533)
CC(DDR2-400)
Unit
[email protected]
400
400
400
Mbps
[email protected]
533
533
400
Mbps
[email protected]
667
-
-
Mbps
CL-tRCD-tRP
5-5-5
4-4-4
3-3-3
CK
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin
• 4 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
- support High Temperature Self-Refresh rate enable feature
• Package: 60ball FBGA - 32Mx8
• All of Lead-free products are compliant for RoHS
Note: For detailed DDR2 SDRAM operation, please refer to Samsung’s Device operation & Timing diagram.
Address Configuration
Organization
Row Address
Column Address
Bank Address
Auto Precharge
32Mx8(256Mb) based Module
A0-A12
A0-A9
BA0-BA1
A10
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
x64 DIMM Pin Configurations (Front side/Back side)
Pin
Front
Pin
Back
Pin
Front
Pin
Back
Pin
Front
Pin
Back
Pin
Front
Pin
Back
1
VREF
121
VSS
31
DQ19
151
VSS
61
A4
181
VDDQ
91
VSS
211
DM5
2
VSS
122
DQ4
32
VSS
152
DQ28
62
VDDQ
182
A3
92
DQS5
212
NC
3
DQ0
123
DQ5
33
DQ24
153
DQ29
63
A2
183
A1
93
DQS5
213
VSS
4
DQ1
124
VSS
34
DQ25
154
VSS
64
VDD
184
VDD
94
VSS
214
DQ46
5
VSS
125
DM0
35
VSS
155
DM3
95
DQ42
215
DQ47
KEY
6
DQS0
126
NC
36
DQS3
156
NC
65
VSS
185
CK0
96
DQ43
216
VSS
7
DQS0
127
VSS
37
DQS3
157
VSS
66
VSS
186
CK0
97
VSS
217
DQ52
DQ53
8
VSS
128
DQ6
38
VSS
158
DQ30
67
VDD
187
VDD
98
DQ48
218
9
DQ2
129
DQ7
39
DQ26
159
DQ31
68
NC
188
A0
99
DQ49
219
VSS
10
DQ3
130
VSS
40
DQ27
160
VSS
69
VDD
189
VDD
100
VSS
220
CK2
CK2
11
VSS
131
DQ12
41
VSS
161
NC
70
A10/AP
190
BA1
101
SA2
221
12
DQ8
132
DQ13
42
NC
162
NC
71
BA0
191
VDDQ
102
222
VSS
13
DQ9
133
VSS
43
NC
163
VSS
72
VDDQ
192
RAS
103
NC, TEST2
VSS
223
DM6
14
VSS
134
DM1
44
VSS
164
NC
73
WE
193
S0
104
DQS6
224
NC
15
DQS1
135
NC
45
NC
165
NC
74
CAS
194
VDDQ
105
DQS6
225
VSS
16
DQS1
136
VSS
46
NC
166
VSS
75
VDDQ
195
ODT0
106
VSS
226
DQ54
17
VSS
137
CK1
47
VSS
167
NC
76
S1
196
107
DQ50
227
DQ55
18
NC
138
CK1
48
NC
168
NC
77
ODT1
197
NC
VDD
108
DQ51
228
VSS
19
NC
139
VSS
49
NC
169
VSS
78
VDDQ
198
VSS
109
VSS
229
DQ60
DQ61
20
VSS
140
DQ14
50
VSS
170
VDDQ
79
VSS
199
DQ36
110
DQ56
230
21
DQ10
141
DQ15
51
VDDQ
171
CKE1
80
DQ32
200
DQ37
111
DQ57
231
VSS
22
DQ11
142
VSS
52
CKE0
172
VDD
81
DQ33
201
VSS
112
VSS
232
DM7
23
VSS
143
DQ20
53
VDD
173
NC
82
VSS
202
DM4
113
DQS7
233
NC
24
DQ16
144
DQ21
54
NC
174
NC
83
DQS4
203
NC
114
DQS7
234
VSS
25
DQ17
145
VSS
55
NC
175
VDDQ
84
DQS4
204
VSS
115
VSS
235
DQ62
26
VSS
146
DM2
56
VDDQ
176
A12
85
VSS
205
DQ38
116
DQ58
236
DQ63
27
DQS2
147
NC
57
A11
177
A9
86
DQ34
206
DQ39
117
DQ59
237
VSS
28
DQS2
148
VSS
58
A7
178
VDD
87
DQ35
207
VSS
118
VSS
238
VDDSPD
29
VSS
149
DQ22
59
VDD
179
A8
88
VSS
208
DQ44
119
SDA
239
SA0
30
DQ18
150
DQ23
60
A5
180
A6
89
DQ40
209
120
SCL
240
SA1
90
DQ41
210
DQ45
VSS
NC = No Connect, RFU = Reserved for Future Use
1. Pin173 Pin174 are reserved for 2Gb/4Gb comp. base Unbuffered DIMM.
2. The TEST pin is reserved for bus analysis tools and is not connected on standard memory module products (DIMMs.)
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
x72 DIMM Pin Configurations (Front side/Back side)
Pin
Front
Pin
Back
Pin
Front
Pin
Back
Pin
Front
Pin
Back
Pin
Front
Pin
Back
1
VREF
121
VSS
31
DQ19
151
VSS
61
A4
181
VDDQ
91
VSS
211
DM5
2
VSS
122
DQ4
32
VSS
152
DQ28
62
VDDQ
182
A3
92
DQS5
212
NC
3
DQ0
123
DQ5
33
DQ24
153
DQ29
63
A2
183
A1
93
DQS5
213
VSS
4
DQ1
124
VSS
34
DQ25
154
VSS
64
VDD
184
VDD
94
VSS
214
DQ46
5
VSS
125
DM0
35
VSS
155
DM3
95
DQ42
215
DQ47
KEY
6
DQS0
126
NC
36
DQS3
156
NC
65
VSS
185
CK0
96
DQ43
216
VSS
7
DQS0
127
VSS
37
DQS3
157
VSS
66
VSS
186
CK0
97
VSS
217
DQ52
8
VSS
128
DQ6
38
VSS
158
DQ30
67
VDD
187
VDD
98
DQ48
218
DQ53
9
DQ2
129
DQ7
39
DQ26
159
DQ31
68
NC
188
A0
99
DQ49
219
VSS
10
DQ3
130
VSS
40
DQ27
160
VSS
69
VDD
189
VDD
100
VSS
220
CK2
CK2
11
VSS
131
DQ12
41
VSS
161
CB4
70
A10/AP
190
BA1
101
SA2
221
12
DQ8
132
DQ13
42
CB0
162
CB5
71
BA0
191
VDDQ
102
NC, TEST2
222
VSS
13
DQ9
133
VSS
43
CB1
163
VSS
72
VDDQ
192
RAS
103
VSS
223
DM6
14
VSS
134
DM1
44
VSS
164
DM8
73
WE
193
S0
104
DQS6
224
NC
15
DQS1
135
NC
45
DQS8
165
NC
74
CAS
194
VDDQ
105
DQS6
225
VSS
16
DQS1
136
VSS
46
DQS8
166
VSS
75
VDDQ
195
ODT0
106
VSS
226
DQ54
17
VSS
137
CK1
47
VSS
167
CB6
76
S1
196
NC
107
DQ50
227
DQ55
18
NC
138
CK1
48
CB2
168
CB7
77
ODT1
197
VDD
108
DQ51
228
VSS
19
NC
139
VSS
49
CB3
169
VSS
78
VDDQ
198
VSS
109
VSS
229
DQ60
DQ61
20
VSS
140
DQ14
50
VSS
170
VDDQ
79
VSS
199
DQ36
110
DQ56
230
21
DQ10
141
DQ15
51
VDDQ
171
CKE1
80
DQ32
200
DQ37
111
DQ57
231
VSS
22
DQ11
142
VSS
52
CKE0
172
VDD
81
DQ33
201
VSS
112
VSS
232
DM7
23
VSS
143
DQ20
53
VDD
173
NC
82
VSS
202
DM4
113
DQS7
233
NC
24
DQ16
144
DQ21
54
NC
174
NC
83
DQS4
203
NC
114
DQS7
234
VSS
25
DQ17
145
VSS
55
NC
175
VDDQ
84
DQS4
204
VSS
115
VSS
235
DQ62
26
VSS
146
DM2
56
VDDQ
176
A12
85
VSS
205
DQ38
116
DQ58
236
DQ63
27
DQS2
147
NC
57
A11
177
A9
86
DQ34
206
DQ39
117
DQ59
237
VSS
28
DQS2
148
VSS
58
A7
178
VDD
87
DQ35
207
VSS
118
VSS
238
VDDSPD
29
VSS
149
DQ22
59
VDD
179
A8
88
VSS
208
DQ44
119
SDA
239
SA0
30
DQ18
150
DQ23
60
A5
180
A6
89
DQ40
209
DQ45
120
SCL
240
SA1
90
DQ41
210
VSS
NC = No Connect, RFU = Reserved for Future Use
1. Pin173 Pin174 are reserved for 2Gb/4Gb comp. base Unbuffered DIMM.
2. The TEST pin is reserved for bus analysis tools and is not connected on standard memory module products (DIMMs.)
Pin Description
Pin Name
Description
Pin Name
Description
A0-A12
DDR2 SDRAM address bus
CK0, CK1, CK2
DDR2 SDRAM clocks (positive line of differential pair)
BA0, BA1
DDR2 SDRAM bank select
CK0, CK1, CK2
DDR2 SDRAM clocks (negative line of differential pair)
RAS
DDR2 SDRAM row address strobe
SCL
I2C serial bus clock for EEPROM
CAS
DDR2 SDRAM column address strobe
SDA
I2C serial bus data line for EEPROM
WE
DDR2 SDRAM wirte enable
S0, S1
DIMM Rank Select Lines
SA0-SA2
VDD*
I2C serial address select for EEPROM
DDR2 SDRAM core power supply
CKE0,CKE1
DDR2 SDRAM clock enable lines
VDDQ*
DDR2 SDRAM I/O Driver power supply
ODT0, ODT1
On-die termination control lines
VREF
DDR2 SDRAM I/O reference supply
VSS
Power supply return (ground)
DQ0 - DQ63
CB0 - CB7
DIMM memory data bus
DIMM ECC check bits
VDDSPD
DQS0 - DQS8
DDR2 SDRAM data strobes
NC
DM(0-8)
DDR2 SDRAM data masks
RESET
DQS0-DQS8
DDR2 SDRAM differential data strobes
TEST
Serial EEPROM positive power supply
Spare Pins(no connect)
Not used on UDIMM
Used by memory bus analysis tools (unused on memory
DIMMs)
* The VDD and VDDQ pins are tied to the single power-plane on PCB.
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
Input/Output Functional Description
Type
Function
CK0-CK2
CK0-CK2
Symbol
Input
CK and CK are differential clock inputs. All the SDRAM addr/cntl inputs are sampled on the crossing of positive edge of
CK and negative edge of CK. Output (read) data is reference to the crossing of CK and CK (Both directions of crossing)
CKE0-CKE1
Input
Activates the SDRAM CK signal when high and deactivates the CK Signal When low. By deactivating the clocks, CKE
low initiates the Powe Down mode, or the Self-Refresh mode
S0-S1
Input
Enables the associated SDRAM command decoder when low and disables the command decoder when high. When the
command decoder is disbled, new command are ignored but previous operations continue. This signal provides for external rank selection on systems with multiple ranks
RAS, CAS, WE
Input
RAS, CAS, and WE (ALONG WITH CS) define the command being entered.
ODT0-ODT1
Input
When high, termination resistance is enabled for all DQ, DQ and DM pins, assuming the function is enabled in the
Extended Mode Register Set (EMRS).
VREF
Supply
Reference voltage for SSTL 18 inputs.
VDDQ
Supply
Power supply for the DDR II SDRAM output buffers to provide improved noise immunity. For all current DDR2 unbuffered
DIMM designs, VDDQ shares the same power plane as VDD pins.
BA0-BA1
Input
Selects which SDRAM BANK of four is activated.
During a Bank Activate command cycle, Address input defines the row address (RA0-RA13)
During a Read or Write command cycle, Address input defines the colum address, In addition to the column address, AP
is used to invoke autoprecharge operation at the end of the burst read or write cycle. If AP is high, autoprecharge is
selected and BA0, BA1 defines the bank to be precharged. If AP is low, autoprecharge is disbled. During a precharge
command cycle, AP is used in conjunction with BA0, BA1 to control which bank(s) to precharge. If AP is high, all banks
will be precharged regardless of the state of BA0, BA1. If AP is low, BA0, BA1are used to define which bank to precharge.
A0-A13
Input
DQ0-DQ63
CB0-CB7
In/Out
Data and Check Bit Input/Output pins.
DM0-DM8
Input
DM is an input mask signal for write data. Input data is masked when DM is sampled High coincident with that input data
during a write access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches
the DQ and DQS loading.
VDD,VSS
Supply
Power and ground for DDR2 SDRAM input buffers, and core logic. VDD and VDDQ pins are tied to VDD/VDDQ planes on
these modules.
DQS0-DQS8
DQS0-DQS8
In/Out
Data strobe for input and output data. For Rawcards using x16 orginized DRAMs DQ0-7 connect to the LDQS pin of the
DRAMs and DQ8-17 connect to the UDQS pin of the DRAM
SA0-SA2
Input
These signals and tied at the system planar to either VSS or VDD to configure the serial SPD EERPOM address range.
SDA
In/Out
This bidirectional pin is used to transfer data into or out of the SPD EEPROM. A resistor must be connected from the
SDA bus line to VDD to act as a pullup on the system board.
SCL
Input
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected from the SCL bus time
to VDD to act as a pullup onthe system board.
VDD SPD
Supply
Power supply for SPD EEPROM. This supply is separate from the VDD/VDDQ power plane. EEPROM supply is operable
from 1.7V to 3.6V.
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
Functional Block Diagram: 256MB, 32Mx64 Module(Populated as 1 rank of x8 DDR2 SDRAMs)
M378T3253FG(Z)3 / M378T3253FG(Z)0
S0
DQS0
DQS0
DM0
DQS4
DQS4
DM4
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS DQS
DM
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
D0
DQS1
DQS1
DM1
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS DQS
D4
DQS5
DQS5
DM5
DM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS DQS
DM
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
D1
DQS2
DQS2
DM2
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS DQS
D5
DQS6
DQS6
DM6
DM
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS DQS
DM
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
D2
DQS3
DQS3
DM3
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS DQS
D6
DQS7
DQS7
DM7
DM
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
NU/ CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS DQS
D3
Serial PD
SCL
SDA
WP
A0
SA0
BA0 - BA1
A0 - A12
RAS
A1
SA1
DM
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
A2
SA2
VDDSPD
Serial PD
VDD/VDDQ
D0 - D7
VREF
D0 - D7
VSS
BA0-BA1 : DDR2 SDRAMs D0 - D7
A0-A12 : DDR2 SDRAMs D0 - D7
CAS : DDR2 SDRAMs D0 - D7
CKE0
CKE : DDR2 SDRAMs D0 - D7
WE
DQS DQS
D7
* Clock Wiring
Clock Input
DDR2 SDRAMs
*CK0/CK0
*CK1/CK1
*CK2/CK2
2 DDR2 SDRAMs
3 DDR2 SDRAMs
3 DDR2 SDRAMs
*Wire per Clock Loading
Table/Wiring Diagrams
RAS : DDR2 SDRAMs D0 - D7
CAS
ODT0
D0 - D7
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
WE : DDR2 SDRAMs D0 - D7
Notes :
1. DQ,DM, DQS/DQS resistors : 22 Ohms ± 5%.
2. BAx, Ax, RAS, CAS, WE resistors : 5.1 Ohms ± 5%.
ODT : DDR2 SDRAMs D0 - D7
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
Functional Block Diagram: 256MB, 32Mx72 ECC Module(Populated as 1 rank of x8 DDR2 SDRAMs)
M391T3253FG(Z)3 / M391T3253FG(Z)0
S0
DQS0
DQS0
DM0
DQS4
DQS4
DM4
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
DQS DQS
DM
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
D0
DQS1
DQS1
DM1
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
DQS DQS
DM
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
D1
DQS2
DQS2
DM2
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
DQS DQS
DM
D2
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
DQS DQS
D5
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
D3
DQS8
DQS8
DM8
DQS DQS
D6
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS DQS
D7
Serial PD
DM
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
SCL
DQS DQS
BA0-BA1 : DDR2 SDRAMs D0 - D8
A0-A12 : DDR2 SDRAMs D0 - D8
RAS : DDR2 SDRAMs D0 - D8
CAS
CAS : DDR2 SDRAMs D0 - D8
CKE : DDR2 SDRAMs D0 - D8
WE : DDR2 SDRAMs D0 - D8
SDA
WP
D8
CKE0
ODT0
DQS DQS
DQS7
DQS7
DM7
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
WE
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQS3
DQS3
DM3
RAS
D4
DQS6
DQS6
DM6
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
A0 - A12
DQS DQS
DQS5
DQS5
DM5
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
BA0 - BA1
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
A0
A1
A2
SA0
SA1
SA2
VDDSPD
Serial PD
VDD/VDDQ
D0 - D8
VREF
D0 - D8
VSS
D0 - D8
* Clock Wiring
Clock Input
DDR2 SDRAMs
*CK0/CK0
*CK1/CK1
*CK2/CK2
3 DDR2 SDRAMs
3 DDR2 SDRAMs
3 DDR2 SDRAMs
*Wire per Clock Loading
Table/Wiring Diagrams
Notes :
1. DQ,DM, DQS/DQS resistors : 22 Ohms ± 5%.
2. BAx, Ax, RAS, CAS, WE resistors : 5.1 Ohms ± 5%.
ODT : DDR2 SDRAMs D0 - D8
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
Functional Block Diagram: 512B, 64Mx64 Module(Populated as 2 ranks of x8 DDR2 SDRAMs)
M378T6453FG(Z)3 / M378T6453FG(Z)0
S1
S0
DQS0
DQS0
DM0
DQS4
DQS4
DM4
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS DQS
DM
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D0
DQS DQS
DM
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
D8
DQS1
DQS1
DM1
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
DQS DQS
DM
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D4
DQS DQS
D12
DQS5
DQS5
DM5
DM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS DQS
DM
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D1
DQS DQS
DM
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
D9
DQS2
DQS2
DM2
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
DQS DQS
DM
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D5
DQS DQS
D13
DQS6
DQS6
DM6
DM
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS DQS
DM
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D2
DQS DQS
DM
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
D10
DQS3
DQS3
DM3
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
DQS DQS
DM
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D6
DQS DQS
D14
DQS7
DQS7
DM7
DM
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
A0 - A12
D3
DQS DQS
DM
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
Serial PD
VDD/VDDQ
D0 - D15
VREF
D0 - D15
DM
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
BA0-BA1 : DDR2 SDRAMs D0 - D15
A0-A12 : DDR2 SDRAMs D0 - D15
CKE : DDR2 SDRAMs D0 - D7
CKE1
CKE : DDR2 SDRAMs D8 - D15
RAS
RAS : DDR2 SDRAMs D0 - D15
CAS
CAS : DDR2 SDRAMs D0 - D15
WE
WE : DDR2 SDRAMs D0 - D15
ODT : DDR2 SDRAMs D0 - D7
ODT : DDR2 SDRAMs D8 - D15
CS
D7
DQS DQS
DM
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS DQS
D15
Serial PD
SCL
SDA
WP
A0
A1
A2
SA0
SA1
SA2
D0 - D15
CKE0
ODT0
ODT1
DQS DQS
D11
VDDSPD
VSS
BA0 - BA1
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
* Clock Wiring
Clock Input
DDR2 SDRAMs
*CK0/CK0
*CK1/CK1
*CK2/CK2
4 DDR2 SDRAMs
6 DDR2 SDRAMs
6 DDR2 SDRAMs
*Wire per Clock Loading
Table/Wiring Diagrams
Notes :
1. DQ,DM, DQS/DQS resistors : 22 Ohms ± 5%.
2. BAx, Ax, RAS, CAS, WE resistors : 3 Ohms ± 5%.
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
Functional Block Diagram: 512MB, 64Mx72 ECC Module(Populated as 2 ranks of x8 DDR2 SDRAMs)
M391T6453FG(Z)3 / M391T6453FG(Z)0
S1
S0
DQS0
DQS0
DM0
DQS4
DQS4
DM4
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
DQS DQS
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D0
CS
DQS DQS
DM
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
D9
DQS1
DQS1
DM1
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
DQS DQS
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D1
CS
DQS DQS
DM
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
D10
DQS2
DQS2
DM2
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
DQS DQS
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D2
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS DQS
DM
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
D11
DQS3
DQS3
DM3
DM
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D4
DQS DQS
D13
CS
DQS DQS
DM
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D5
DQS DQS
D14
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
DQS DQS
DM
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D6
DQS DQS
D15
DQS7
DQS7
DM7
DM
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
DQS DQS
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D3
CS
DQS DQS
DM
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
D12
DQS8
DQS8
DM8
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
DQS DQS
DM
CS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D7
DQS DQS
D16
Serial PD
DM
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
D8
DQS DQS
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
CS
CKE : DDR2 SDRAMs D0 - D8
CKE : DDR2 SDRAMs D9 - D17
RAS
RAS : DDR2 SDRAMs D0 - D17
CAS
CAS : DDR2 SDRAMs D0 - D17
WE
WE : DDR2 SDRAMs D0 - D17
ODT : DDR2 SDRAMs D0 - D8
ODT : DDR2 SDRAMs D9 - D17
SDA
WP
D17
A0-A12 : DDR2 SDRAMs D0 - D17
CKE0
SCL
DQS DQS
BA0-BA1 : DDR2 SDRAMs D0 - D17
CKE1
ODT0
ODT1
DQS DQS
DQS6
DQS6
DM6
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
A0 - A12
CS
DQS5
DQS5
DM5
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
BA0 - BA1
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
A0
A1
A2
SA0
SA1
SA2
* Clock Wiring
VDDSPD
Serial PD
VDD/VDDQ
D0 - D17
VREF
D0 - D17
VSS
D0 - D17
Clock Input
DDR2 SDRAMs
*CK0/CK0
*CK1/CK1
*CK2/CK2
6 DDR2 SDRAMs
6 DDR2 SDRAMs
6 DDR2 SDRAMs
*Wire per Clock Loading
Table/Wiring Diagrams
Notes :
1. DQ,DM, DQS/DQS resistors : 22 Ohms ± 5%.
2. BAx, Ax, RAS, CAS, WE resistors : 3 Ohms ± 5%.
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
Absolute Maximum DC Ratings
Symbol
Rating
Units
Notes
Voltage on VDD pin relative to VSS
- 1.0 V ~ 2.3 V
V
1
VDDQ
Voltage on VDDQ pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
VDDL
Voltage on VDDL pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
Voltage on any pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
-55 to +100
°C
1, 2
VDD
VIN, VOUT
TSTG
Parameter
Storage Temperature
Note :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2
standard.
AC & DC Operating Conditions
Recommended DC Operating Conditions (SSTL - 1.8)
Symbol
Parameter
Rating
Min.
Typ.
Max.
1.7
1.8
1.9
Units
Notes
VDD
Supply Voltage
VDDL
Supply Voltage for DLL
1.7
1.8
1.9
V
4
VDDQ
Supply Voltage for Output
1.7
1.8
1.9
V
4
VREF
Input Reference Voltage
0.49*VDDQ
0.50*VDDQ
0.51*VDDQ
mV
1,2
Termination Voltage
VREF-0.04
VREF
VREF+0.04
V
3
VTT
V
Note : There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or equal
to VDD.
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5
x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. AC parameters are measured with VDD, VDDQ and VDDL tied together.
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
Operating Temperature Condition
Symbol
Parameter
Rating
Units
Notes
TOPER
Operating Temperature
0 to 95
°C
1, 2, 3
Note :
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to
JESD51.2 standard.
2. At 0 - 85 °C, operation temperature range are the temperature which all DRAM specification will be supported.
3. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to self
refresh mode at this temperature range, an EMRS command is required to change internal refresh rate.
Input DC Logic Level
Symbol
Parameter
Min.
Max.
Units
VIH(DC)
DC input logic high
VREF + 0.125
VDDQ + 0.3
V
VIL(DC)
DC input logic low
VDDQ- 0.3
VREF - 0.125
V
Notes
Input AC Logic Level
DDR2-400, DDR2-533
Symbol
Parameter
VIH (AC)
AC input logic high
VIL (AC)
AC input logic low
Min.
DDR2-667
Max.
Min.
VREF + 0.250
-
VREF + 0.200
-
VREF - 0.250
Max.
Units
Notes
V
VREF - 0.200
V
AC Input Test Conditions
Symbol
VREF
VSWING(MAX)
SLEW
Condition
Value
Units
0.5 * VDDQ
V
1
Input signal maximum peak to peak swing
1.0
V
1
Input signal minimum slew rate
1.0
V/ns
2, 3
Input reference voltage
Notes
Notes:
1. Input waveform timing is referenced to the input signal crossing through the VIH/IL(AC) level applied to the device under test.
2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(AC) min for rising edges and the range from VREF to VIL(AC)
max for falling edges as shown in the below figure.
3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive transitions and VIH(AC) to VIL(AC) on the negative
transitions.
VDDQ
VIH(AC) min
VIH(DC) min
VSWING(MAX)
VREF
VIL(DC) max
VIL(AC) max
delta TF
Falling Slew =
delta TR
VREF - VIL(AC) max
delta TF
Rising Slew =
VSS
VIH(AC) min - VREF
delta TR
< AC Input Test Signal Waveform >
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
IDD Specification Parameters Definition
(IDD values are for full operating range of Voltage and Temperature)
Symbol
Proposed Conditions
Units
IDD0
Operating one bank active-precharge current;
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD1
Operating one bank active-read-precharge current;
IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD =
tRCD(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern
is same as IDD4W
mA
IDD2P
Precharge power-down current;
All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are
FLOATING
mA
IDD2Q
Precharge quiet standby current;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputs are STABLE; Data
bus inputs are FLOATING
mA
IDD2N
Precharge standby current;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
mA
IDD3P
Active power-down current;
All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus
inputs are STABLE; Data bus inputs are FLOATING
IDD3N
Active standby current;
All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD4W
Operating burst write current;
All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP
= tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD4R
Operating burst read current;
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
mA
IDD5B
Burst auto refresh current;
tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS\ is HIGH between valid commands;
Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD6
Self refresh current;
CK and CK\ at 0V; CKE ≤ 0.2V; Other control and address bus inputs are
FLOATING; Data bus inputs are FLOATING
IDD7
Operating bank interleave read current;
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC =
tRC(IDD), tRRD = tRRD(IDD), tFAW = tFAW(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; Refer to the following
page for detailed timing conditions
Fast PDN Exit MRS(12) = 0mA
mA
Slow PDN Exit MRS(12) = 1mA
mA
Normal
mA
Low Power
mA
Notes
mA
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
Operating Current Table(1-1) (TA=0oC, VDD= 1.9V)
M378T3253FG(Z)3 / M378T3253FG(Z)0 : 256MB(32Mx8 *8) Module
IDD6
Symbol
E6
([email protected]=5)
D5
([email protected]=4)
CC
([email protected]=3)
Unit
IDD0
840
800
760
mA
IDD1
920
880
800
mA
IDD2P
64
64
64
mA
IDD2Q
240
200
200
mA
IDD2N
280
240
240
mA
IDD3P-F
280
240
240
mA
IDD3P-S
120
120
120
mA
IDD3N
600
560
520
mA
IDD4W
1,680
1,400
1,080
mA
IDD4R
1,480
1,280
1,040
mA
IDD5B
1,360
1,320
1,280
mA
40
40
40
mA
2,120
2,040
2,040
mA
Normal
IDD7
Notes
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M378T6453FG(Z)3 / M378T6453FG(Z)0 : 512MB(32Mx8 *16) Module
IDD6
Symbol
E6
([email protected]=5)
D5
([email protected]=4)
CC
([email protected]=3)
Unit
IDD0
1,440
1,360
1,280
mA
IDD1
1,520
1,440
1,320
mA
IDD2P
128
128
128
mA
IDD2Q
480
400
400
mA
IDD2N
560
480
480
mA
IDD3P-F
560
480
480
mA
IDD3P-S
240
240
240
mA
IDD3N
1,200
1,120
1,040
mA
IDD4W
2,280
1,960
1,600
mA
IDD4R
2,080
1,840
1,560
mA
IDD5B
1,960
1,880
1,800
mA
80
80
80
mA
2,720
2,600
2,560
mA
Normal
IDD7
Notes
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
Operating Current Table(1-2) (TA=0oC, VDD= 1.9V)
M391T3253FG(Z)3 / M391T3253FG(Z)0 : 256MB(32Mx8 *9) ECC Module
Symbol
E6
([email protected]=5)
D5
([email protected]=4)
CC
([email protected]=3)
Unit
IDD0
945
900
855
mA
IDD1
1,035
990
900
mA
IDD2P
72
72
72
mA
IDD2Q
270
225
225
mA
mA
IDD2N
315
270
270
IDD3P-F
315
270
270
mA
IDD3P-S
135
135
135
mA
IDD3N
675
630
585
mA
IDD4W
1,890
1,575
1,215
mA
IDD4R
1,665
1,440
1,170
mA
IDD5B
1,530
1,485
1,440
mA
IDD6
Normal
IDD7
45
45
45
mA
2,385
2,295
2,295
mA
Notes
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M391T6453FG(Z)3 / M391T6453FG(Z)0 : 512MB(32Mx8 *18) ECC Module
IDD6
Symbol
E6
([email protected]=5)
D5
([email protected]=4)
CC
([email protected]=3)
Unit
IDD0
1,620
1,530
1,440
mA
IDD1
1,710
1,620
1,485
mA
IDD2P
144
144
144
mA
IDD2Q
540
450
450
mA
IDD2N
630
540
540
mA
IDD3P-F
630
540
540
mA
IDD3P-S
270
270
270
mA
IDD3N
1,350
1,260
1,170
mA
IDD4W
2,565
2,205
1,800
mA
IDD4R
2,340
2,070
1,755
mA
IDD5B
2,205
2,115
2,025
mA
90
90
90
mA
3,060
2,925
2,880
mA
Normal
IDD7
Notes
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
Input/Output Capacitance(VDD=1.8V, VDDQ=1.8V, TA=25oC)
Parameter
Non-ECC
Input capacitance, CK and CK
Min
Symbol
Max
M378T3253FG(Z)3
M378T3253FG(Z)0
Min
Max
M378T6453FG(Z)3
CCK0
-
24
-
26
CCK1
-
25
-
28
CCK2
-
25
-
28
Input capacitance, CKE and CS
CI1
-
42
-
42
Input capacitance, Addr,RAS,CAS,WE
CI2
-
42
-
42
Input/output capacitance, DQ, DM, DQS, DQS
CIO
-
6
-
10
ECC
Symbol
M391T3253FG(Z)3
M391T3253FG(Z)0
M391T6453FG(Z)3
M391T6453FG(Z)0
CCK0
-
25
-
28
CCK1
-
25
-
28
CCK2
-
25
-
28
Input capacitance, CKE and CS
CI1
-
44
-
44
Input capacitance, Addr,RAS,CAS,WE
CI2
-
44
-
44
Input/output capacitance, DQ, DM, DQS, DQS
CIO
-
6
-
10
Input capacitance, CK and CK
Units
M378T6453FG(Z)0
pF
Units
pF
* DM is internally loaded to match DQ and DQS identically.
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
Electrical Characteristics & AC Timing for DDR2-667/533/400 SDRAM
(0 °C < TCASE < 95 °C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V)
Refresh Parameters by Device Density
Parameter
Symbol
Refresh to active/Refresh command time
tRFC
Average periodic refresh interval
tREFI
256Mb
512Mb
1Gb
2Gb
4Gb
Units
75
105
127.5
195
tbd
ns
0 °C ≤ TCASE ≤ 85°C
7.8
7.8
7.8
7.8
7.8
µs
85 °C < TCASE ≤ 95°C
3.9
3.9
3.9
3.9
3.9
µs
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Speed
DDR2-667(E6)
DDR2-533(D5)
DDR2-400(CC)
5 - 5- 5
4-4-4
3-3-3
Bin (CL - tRCD - tRP)
Units
Parameter
min
max
min
max
min
max
tCK, CL=3
5
8
5
8
5
8
ns
tCK, CL=4
3.75
8
3.75
8
5
8
ns
tCK, CL=5
3
8
-
-
-
-
ns
tRCD
15
15
15
ns
tRP
15
15
15
ns
tRC
54
tRAS
39
55
55
40
70000
ns
40
70000
ns
70000
Timing Parameters by Speed Grade
(Refer to notes for informations related to this table at the bottom)
Parameter
Symbol
DDR2-667
DDR2-533
DDR2-400
min
max
min
max
min
max
Units
Notes
DQ output access time from CK/CK
tAC
-450
+450
-500
+500
-600
+600
DQS output access time from CK/CK
tDQSCK
-400
+400
-450
+450
-500
+500
ps
ps
CK high-level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CK half period
tHP
min(tCL,
tCH)
x
min(tCL,
tCH)
x
min(tCL,
tCH)
x
ps
Clock cycle time, CL=x
tCK
3000
8000
3750
8000
5000
8000
ps
24
DQ and DM input hold time
tDH
175
x
225
x
275
x
ps
15,16,17
DQ and DM input setup time
tDS
50
x
100
x
150
x
ps
15,16,17
Control & Address input pulse width for each input
tIPW
0.6
x
0.6
x
0.6
x
tCK
DQ and DM input pulse width for each input
tDIPW
0.35
x
0.35
x
0.35
x
tCK
Data-out high-impedance time from CK/CK
tHZ
DQS low-impedance time from CK/CK
tLZ(DQS)
DQ low-impedance time from CK/CK
20,21
x
tAC max
x
tAC max
x
tAC max
ps
tAC min
tAC max
tAC min
tAC max
tAC min
tAC max
ps
27
tLZ(DQ)
2*tAC min
tAC max
2* tACmin
tAC max
2* tACmin
tAC max
ps
27
DQS-DQ skew for DQS and associated DQ signals
tDQSQ
x
250
x
300
x
350
ps
22
DQ hold skew factor
tQHS
x
350
x
400
x
450
ps
21
DQ/DQS output hold time from DQS
tQH
tHP - tQHS
x
tHP - tQHS
x
tHP - tQHS
x
ps
Write command to first DQS latching transition
tDQSS
WL-0.25
WL+0.25
WL-0.25
WL+0.25
WL-0.25
WL+0.25
tCK
DQS input high pulse width
tDQSH
0.35
x
0.35
x
0.35
x
tCK
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
Parameter
Symbol
DDR2 SDRAM
DDR2-667
DDR2-533
DDR2-400
min
max
min
max
min
max
Units
Notes
DQS input low pulse width
tDQSL
0.35
x
0.35
x
0.35
x
tCK
DQS falling edge to CK setup time
tDSS
0.2
x
0.2
x
0.2
x
tCK
DQS falling edge hold time from CK
tDSH
0.2
x
0.2
x
0.2
x
tCK
Mode register set command cycle time
tMRD
2
x
2
x
2
x
tCK
Write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
Write preamble
tWPRE
0.35
x
0.35
x
0.35
x
tCK
Address and control input hold time
tIH
275
x
375
x
475
x
ps
14,16,18
Address and control input setup time
tIS
200
x
250
x
350
x
ps
14,16,18
Read preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
28
Read postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
28
Active to active command period for 1KB page size products tRRD
7.5
x
7.5
x
7.5
x
ns
12
Active to active command period for 2KB page size products tRRD
10
x
10
x
10
x
ns
12
19
Four Activate Window for 1KB page size products
tFAW
37.5
37.5
37.5
Four Activate Window for 2KB page size products
tFAW
50
50
50
ns
CAS to CAS command delay
tCCD
2
2
2
tCK
Write recovery time
tWR
15
x
15
x
15
x
ns
Auto precharge write recovery + precharge time
tDAL
tWR+tRP
x
tWR+tRP
x
tWR+tRP
x
tCK
Internal write to read command delay
tWTR
7.5
x
7.5
x
10
x
ns
Internal read to precharge command delay
tRTP
7.5
7.5
7.5
ns
Exit self refresh to a non-read command
tXSNR
tRFC + 10
tRFC + 10
tRFC + 10
ns
Exit self refresh to a read command
tXSRD
200
Exit precharge power down to any non-read command
tXP
2
x
2
x
2
x
tCK
Exit active power down to read command
tXARD
2
x
2
x
2
x
tCK
9
Exit active power down to read command
(Slow exit, Lower power)
tXARDS
9, 10
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
200
ns
200
6 - AL
6 - AL
tCK
tCKE
3
3
3
tCK
tAOND
2
2
tAC(max)+
0.7
2
tAC(min)
tAC(max)+
1
2
2
tCK
tAC(min)
tAC(max)+
1
ns
2tCK+tAC
(max)+1
ns
2.5
tAC(min)
ODT turn-on
tAON
tAC(min)
ODT turn-on(Power-Down mode)
tAONPD
tAC(min)+ 2tCK+tAC( tAC(min)+ 2tCK+tAC( tAC(min)+
2
max)+1
2
max)+1
2
ODT turn-off delay
tAOFD
2.5
2.5
2.5
2.5
2.5
tCK
tAC(min)
tAC(max)+
0.6
tAC(max)+
0.6
ns
2.5tCK+
2.5tCK+
tAC(min)+
tAC(min)+
tAC(max)+
tAC(max)+
2
2
1
1
ns
ODT turn-off
tAOF
tAC(min)
tAC(max)+
0.6
ODT turn-off (Power-Down mode)
tAOFPD
tAC(min)+
2
2.5tCK+tA
C(max)+1
ODT to power down entry latency
tANPD
3
3
3
ODT power down exit latency
tAXPD
8
8
8
OCD drive mode output delay
tOIT
0
Minimum time clocks remains ON after CKE asynchronously
tDelay
drops LOW
tIS+tCK
+tIH
12
0
tIS+tCK
+tIH
12
0
tIS+tCK
+tIH
11
tCK
6 - AL
2
23
13, 25
26
tCK
tCK
12
ns
ns
24
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
Physical Dimensions: 32Mbx8 based 32Mx64/x72 Module(1 Rank)
M378T3253FG(Z)3 / M391T3253FG(Z)3
M378T3253FG(Z)0 / M391T3253FG(Z)0
Units : Millimeters
133.35
(2X)4.00
131.35
128.95
N/A
10.00
(for x64)
ECC
SPD
30.00
(2)
2.50
17.80
2.30
(for x72)
B
A
63.00
2.7
55.00
1.270 ± 0.10
4.00
4.00
3.00
2.50±0.20
5.00
0.80±0.05
3.80
2.50
1.50±0.10
Detail A
0.20
1.00
4.00
Detail B
The used device is 32M x8 DDR2 SDRAM, FBGA.
DDR2 SDRAM Part NO : K4T56083QF
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
Physical Dimensions: 32Mbx8 based 64Mx64/x72 Module(2 Ranks)
M378T6453FG(Z)3 / M391T6453FG(Z)3
M378T6453FG(Z)0 / M391T6453FG(Z)0
Units : Millimeters
133.35
(2X)4.00
131.35
128.95
10.00
N/A
(for x64)
SPD
30.00
ECC
(2)
2.50
A
17.80
2.30
(for x72)
B
63.00
4.00
55.00
N/A
(for x64)
ECC
(for x72)
1.270 ± 0.10
4.00
4.00
3.00
2.50±0.20
5.00
0.80±0.05
3.80
2.50
1.50±0.10
Detail A
0.20
1.00
4.00
Detail B
The used device is 32M x8 DDR2 SDRAM, FBGA.
DDR2 SDRAM Part NO : K4T56083QF
Rev. 1.3 Aug. 2005
256MB, 512MB Unbuffered DIMMs
DDR2 SDRAM
Revision History
Revision 1.0 (Jan. 2004)
- Initial Release
Revision 1.1 (Jun. 2004)
- Added lead-free part number in the ordering information
- Changed IDD2P
Revision 1.2 (Jan. 2005)
- Revised tIH value of 667 speed
Revision 1.3 (Aug. 2005)
- Added Dummy Pad PCB product part number in ordering information
Rev. 1.3 Aug. 2005