UFB60FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package (VISOL = 2500 VAC) • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage SOT-227 • Optimized for power conversion: welding and industrial SMPS applications • Industry standard outline • Plug-in compatible with other SOT-227 packages • Easy to assemble • Direct mounting to heatsink • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION PRODUCT SUMMARY VR The UFB60FA60P insulated modules integrate two state of the art Vishay Semiconductors ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness, and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be a predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, and dc-to-dc converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. 600 V IF(AV) per module at TC = 107 °C 60 A trr 79 ns ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Cathode to anode voltage VR Continuous forward current per diode IF TC = 85 °C 44 Single pulse forward current per diode IFSM TC = 25 °C 280 PD TC = 85 °C 120 Maximum power dissipation per module RMS isolation voltage VISOL Operating junction and storage temperatures Document Number: 94564 Revision: 21-Jul-10 TJ, TStg Any terminal to case, t = 1 min A W 2500 V - 55 to 175 °C For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 UFB60FA60P Insulated Ultrafast Rectifier Module, 60 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Cathode to anode breakdown voltage Forward voltage VBR VFM TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 30 A - 1.32 1.69 IF = 60 A - 1.52 1.9 IR = 100 μA IF = 30 A IRM Junction capacitance CT V - 1.14 1.39 - 1.38 1.66 VR = VR rated - 0.1 100 μA TJ = 175 °C, VR = VR rated - 0.2 1.0 mA VR = 600 V - 50 - pF UNITS TJ = 125 °C IF = 60 A Reverse leakage current UNITS DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr MIN. TYP. MAX. TJ = 25 °C TEST CONDITIONS - 79 118 TJ = 125 °C - 155 209 IF = 30 A dIF/dt = 200 A/μs VR = 200 V TJ = 25 °C TJ = 125 °C - 6 10 - 14 20 TJ = 25 °C - 234 590 TJ = 125 °C - 1085 2090 MIN. TYP. MAX. - - 1.5 - - 0.75 - 0.05 - ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink SYMBOL TEST CONDITIONS RthJC RthCS Flat, greased surface UNITS °C/W Weight - 30 - g Mounting torque - 1.3 - N·m www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94564 Revision: 21-Jul-10 UFB60FA60P Insulated Ultrafast Rectifier Module, 60 A Vishay Semiconductors 1000 1000 175°C Reverse Current - IR (μA) 100 125°C 10 1 0.1 25°C 0.01 0.001 100 Tj = 175°C 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 10 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 100 Tj = 125°C Tj = 25°C 1 100 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 Forward Voltage Drop - VF (V) 100 1000 Reverse Voltage - VR (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Diode) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance Z thJC (°C/W) 10 D = 0.75 D = 0.5 1 D = 0.33 D = 0.25 D = 0.2 Single Pulse (Thermal Resistance) 0.1 1E-03 1E -0 2 1E-01 1E+00 t 1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode) Document Number: 94564 Revision: 21-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 UFB60FA60P Insulated Ultrafast Rectifier Module, 60 A Vishay Semiconductors 200 Vr = 200V 175 150 If = 30A, 125°C 150 trr (ns) Allowable Case Temperature (°C) 200 DC 100 50 125 100 Square wave (D=0.50) 80% rated Vr applied If = 30A, 25°C see note 1 75 0 0 10 20 30 40 50 60 70 Average Forward Current - IF(AV) (A) 50 100 1000 dI F /dt (A/μs ) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) 1750 Vr = 200V 1500 If = 30A, 125°C 50 1250 DC 40 1000 RMS Limit 30 Qrr (nC) Average Power Loss ( W ) 60 D = 0.2 D = 0.25 D = 0.33 D = 0.5 D = 0.75 20 750 500 10 If = 30A, 25°C 0 0 10 20 30 40 50 Average Forward Current - IF(AV) (A) 250 0 1 00 Fig. 6 - Forward Power Loss Characteristics (Per Leg) 1000 dI F /dt (A/μs ) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94564 Revision: 21-Jul-10 UFB60FA60P Insulated Ultrafast Rectifier Module, 60 A Vishay Semiconductors 30 Vr = 200V 25 Irr (A) 20 If = 30A, 125°C 15 If = 30A, 25°C 10 5 0 100 1000 dI F /dt (A/μs ) Fig. 9 - Typical Stored Current vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 10 - Reverse Recovery Parameter Test Circuit Document Number: 94564 Revision: 21-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 UFB60FA60P Insulated Ultrafast Rectifier Module, 60 A Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code UF B 60 F A 60 P 1 2 3 4 5 6 7 1 - Ultrafast rectifier 2 - Ultrafast Pt diffused 3 - Current rating (60 = 60 A) 4 - Circuit configuration (2 separate diodes, parallel pin-out) 5 - Package indicator (SOT-227 standard isolated base) 6 - Voltage rating (60 = 600 V) 7 - P = Lead (Pb)-free CIRCUIT CONFIGURATION 1 4 2 3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94564 Revision: 21-Jul-10 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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