SAMSUNG MR18R1624AF1-CN9

MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
Change History
Version 1.1 (August 2001)
* First copy.
* Based on the 1.0ver Rambus 256/288Mbit RIMM Module Datasheet
Version 1.2 (February 2002)
* Add 1066-35 binning
Version 1.3 (April 2002)
* Add 800-40 and 1066-32 binning
* Modify ∆TPD Value of AC electrical specifications
* Modify the Values of AC electrical specifications for RIMM Module
Version 1.4 (July 2002)
* Add 1066-32 512MB (16d RIMM Module) etc.
Page 0
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
(16Mx16)*2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
(16Mx18)*2(4/8/16)pcs RIMM Module based on 288Mb A-die, 32s banks,16K/32ms Ref, 2.5V
Overview
Key Timing Parameters/Part Numbers
The RIMM module is a general purpose high- performance
memory module suitable for use in a broad range of applications including computer memory, personal computers,
workstations and other applications where high bandwidth
and low latency are required.
The following table lists the frequency and latency bins
available for RIMM modules.
RDRAM
The RIMM module consists of 256/288Mb
devices. These are extremely high-speed CMOS DRAMs
organized as 16M words by 16 or 18 bits. The use of
Rambus Signaling Level (RSL) technology permits up to
1066 MHz transfer rates while using conventional system
and board design technologies. RDRAM devices are capable
of sustained data transfers at 0.94 ns per two bytes (7.5ns per
16 bytes).
The RDRAM architecture enables the highest sustained
bandwidth for multiple, simultaneous, randomly addressed,
memory transactions. The separate control and data buses
with independent row and column control yield over 95%
bus efficiency. The RDRAM device's 32-bank architecture
supports up to four simultaneous transactions per device.
Table 1: Part Number by Freq. & Latency
Speed
Organization
Bin
32M x 16/18
64M x 16/18
128M x 16/18
Features
256M x 16/18
tRAC
I/O
(Row
Freq.
Access
(MHz) Time) ns
Part Number
-CM8
800
40
MR16/18R1622AF0-CM8
-CK8
800
45
MR16/18R1622AF0-CK8
-CT9
1066
32P
MR18R1624AF1-CT9
-CN9
1066
32
MR18R1624AF1-CN9
-CM8
800
40
MR16/18R1624AF0-CM8
MR16/18R1624AF0-CK8
-CK8
800
45
-CT9
1066
32P
MR18R1628AF1-CT9
-CN9
1066
32
MR18R1628AF1-CN9
-CM8
800
40
MR16/18R1628AF0-CM8
MR16/18R1628AF0-CK8
-CK8
800
45
-CT9
1066
32P
MR18R162GAF0-CT9
-CN9
1066
32
MR18R162GAF0-CN9
♦ High speed up to 1066 MHz RDRAM storage
♦ 184 edge connector pads with 1mm pad spacing
♦ Module PCB size : 133.35mm x 31.75mm x 1.27mm
-CM8
800
40
MR16/18R162GAF0-CM8
-CK8
800
45
MR16/18R162GAF0-CK8
(5.25” x 1.25” x 0.05”) - 256Mb base RIMM Module
Form Factor
♦ Module PCB size : 133.35mm x 34.93mm x 1.27mm
(5.25” x 1.375” x 0.05”) - 288Mb base RIMM Module
♦ Each RDRAM device has 32 banks, for a total of 512, 256,
128, 64 banks on each 512/576MB, 256/288MB,
128/144MB, 64/72MB module respectively
♦ Gold plated edge connector pad contacts
♦ Serial Presence Detect(SPD) support
♦ Operates from a 2.5 volt supply (±5%)
♦ Powerdown self refresh modes
♦ Separate Row and Column buses for higher efficiency
♦ WBGA package (92 balls)
The RIMM modules are offered in 184-pad 1mm edge
connector pad pitch suitable for 184 contact RIMM connectors. Figure 1 below, shows a sixteen device RIMM module.
Note: On double sided modules, RDRAM devices are also installed on bottom side of PCB.
Figure 1: RIMM Module shown with heat spreader removed
Page 1
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
Table 2: Module Pad Numbers and Signal Names
Pin
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
A32
A33
A34
A35
A36
A37
A38
A39
A40
A41
A42
A43
A44
A45
A46
Pin Name
Gnd
LDQA8
Gnd
LDQA6
Gnd
LDQA4
Gnd
LDQA2
Gnd
LDQA0
Gnd
LCTMN
Gnd
LCTM
Gnd
NC
Gnd
LROW1
Gnd
LCOL4
Gnd
LCOL2
Gnd
LCOL0
Gnd
LDQB1
Gnd
LDQB3
Gnd
LDQB5
Gnd
LDQB7
Gnd
LSCK
Vcmos
SOUT
Vcmos
NC
Gnd
NC
Vdd
Vdd
NC
NC
NC
NC
Pin
B1
B2
B3
B4
B5
B6
B7
B8
B9
B10
B11
B12
B13
B14
B15
B16
B17
B18
B19
B20
B21
B22
B23
B24
B25
B26
B27
B28
B29
B30
B31
B32
B33
B34
B35
B36
B37
B38
B39
B40
B41
B42
B43
B44
B45
B46
Pin Name
Pin
Gnd
LDQA7
Gnd
LDQA5
Gnd
LDQA3
Gnd
LDQA1
Gnd
LCFM
Gnd
LCFMN
Gnd
NC
Gnd
LROW2
Gnd
LROW0
Gnd
LCOL3
Gnd
LCOL1
Gnd
LDQB0
Gnd
LDQB2
Gnd
LDQB4
Gnd
LDQB6
Gnd
LDQB8
Gnd
LCMD
Vcmos
SIN
Vcmos
NC
Gnd
NC
Vdd
Vdd
NC
NC
NC
NC
A47
A48
A49
A50
A51
A52
A53
A54
A55
A56
A57
A58
A59
A60
A61
A62
A63
A64
A65
A66
A67
A68
A69
A70
A71
A72
A73
A74
A75
A76
A77
A78
A79
A80
A81
A82
A83
A84
A85
A86
A87
A88
A89
A90
A91
A92
Page 2
Pin Name
NC
NC
NC
NC
Vref
Gnd
SCL
Vdd
SDA
SVdd
SWP
Vdd
RSCK
Gnd
RDQB7
Gnd
RDQB5
Gnd
RDQB3
Gnd
RDQB1
Gnd
RCOL0
Gnd
RCOL2
Gnd
RCOL4
Gnd
RROW1
Gnd
NC
Gnd
RCTM
Gnd
RCTMN
Gnd
RDQA0
Gnd
RDQA2
Gnd
RDQA4
Gnd
RDQA6
Gnd
RDQA8
Gnd
Pin
B47
B48
B49
B50
B51
B52
B53
B54
B55
B56
B57
B58
B59
B60
B61
B62
B63
B64
B65
B66
B67
B68
B69
B70
B71
B72
B73
B74
B75
B76
B77
B78
B79
B80
B81
B82
B83
B84
B85
B86
B87
B88
B89
B90
B91
B92
Pin Name
NC
NC
NC
NC
Vref
Gnd
SA0
Vdd
SA1
SVdd
SA2
Vdd
RCMD
Gnd
RDQB8
Gnd
RDQB6
Gnd
RDQB4
Gnd
RDQB2
Gnd
RDQB0
Gnd
RCOL1
Gnd
RCOL3
Gnd
RROW0
Gnd
RROW2
Gnd
NC
Gnd
RCFMN
Gnd
RCFM
Gnd
RDQA1
Gnd
RDQA3
Gnd
RDQA5
Gnd
RDQA7
Gnd
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
Table 3: Module Connector Pad Description
Signal
Pins
I/O
Type
Description
Gnd
A1, A3, A5, A7, A9, A11, A13, A15,
A17, A19, A21, A23, A25, A27, A29,
A31, A33, A39, A52, A60, A62, A64,
A66, A68, A70, A72, A74, A76, A78,
A80, A82, A84, A86, A88, A90, A92,
B1, B3, B5, B7, B9, B11, B13, B15,
B17, B19, B21, B23, B25, B27, B29,
B31, B33, B39, B52, B60, B62, B64,
B66, B68, B70, B72, B74, B76, B78,
B80, B82, B84, B86, B88, B90, B92
LCFM
B10
I
RSL
Clock from master. Interface clock used for receiving RSL
signals from the Channel. Positive polarity.
LCFMN
B12
I
RSL
Clock from master. Interface clock used for receiving RSL
signals from the Channel. Negative polarity.
LCMD
B34
I
VCMOS
Serial Command used to read from and write to the control
registers. Also used for power management.
LCOL4..
LCOL0
A20, B20, A22, B22, A24
I
RSL
Column bus. 5-bit bus containing control and address information for column accesses.
LCTM
A14
I
RSL
Clock to master. Interface clock used for transmitting RSL
signals to the Channel. Positive polarity.
LCTMN
A12
I
RSL
Clock to master. Interface clock used for transmitting RSL
signals to the Channel. Negative polarity.
LDQA8..
LDQA0
A2, B2, A4, B4, A6, B6, A8, B8, A10
I/O
RSL
Data bus A. A 9-bit bus carrying a byte of read or write data
between the Channel and the RDRAM device. LDQA8 is
non-functional on modules with x16 RDRAM devices
LDQB8..
LDQB0
B32, A32, B30, A30, B28, A28, B26,
A26, B24
I/O
RSL
Data bus B. A 9-bit bus carrying a byte of read or write data
between the Channel and the RDRAM device. LDQB8 is nonfunctional on modules with x16 RDRAM devices.
LROW2..
LROW0
B16, A18, B18
I
RSL
Row bus. 3-bit bus containing control and address information
for row accesses.
LSCK
A34
I
VCMOS
Serial Clock input. Clock source used to read from and write
to the RDRAM control registers.
NC
A16, B14, A38, B38, A40, B40, A43,
B43, A44, B44, A45, B45, A46, B46,
A47, B47, A48, B48, A49, B49, A50,
B50, A77, B79
RCFM
B83
I
RSL
Clock from master. Interface clock used for receiving RSL
signals from the Channel. Positive polarity.
RCFMN
B81
I
RSL
Clock from master. Interface clock used for receiving RSL
signals from the Channel. Negative polarity.
RCMD
B59
I
VCMOS
Ground reference for RDRAM core and interface. 72 PCB
connector pads.
These pads are not connected. These 24 connector pads are
reserved for future use.
Page 3
Serial Command Input. Pin used to read from and write to the
control registers. Also used for power management.
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
Signal
Pins
I/O
Type
Description
RCOL4..
RCOL0
A73, B73, A71, B71, A69
I
RSL
Column bus. 5-bit bus containing control and address information for column accesses.
RCTM
A79
I
RSL
Clock to master. Interface clock used for transmitting RSL
signals to the Channel. Positive polarity.
RCTMN
A81
I
RSL
Clock to master. Interface clock used for transmitting RSL
signals to the Channel. Negative polarity.
RDQA8..
RDQA0
A91, B91, A89, B89, A87, B87, A85,
B85, A83
I/O
RSL
Data bus A. A 9-bit bus carrying a byte of read or write data
between the Channel and the RDRAM device. RDQA8 is
non-functional on modules x16 RDRAM devices.
RDQB8..
RDQB0
B61, A61, B63, A63, B65, A65, B67,
A67, B69
I/O
RSL
Data bus B. A 9-bit bus carrying a byte of read or write data
between the Channel and the RDRAM device. RDQB8 is
non-functional on modules x16 RDRAM devices.
RROW2..
RROW0
B77, A75, B75
I
RSL
Row bus. 3-bit bus containing control and address information
for row accesses.
RSCK
A59
I
VCMOS
Serial Clock input. Clock source used to read from and write
to the RDRAM control registers.
SA0
B53
I
SVDD
Serial Presence Detect Address 0.
SA1
B55
I
SVDD
Serial Presence Detect Address 1.
SA2
B57
I
SVDD
Serial Presence Detect Address 2.
SCL
A53
I
SVDD
Serial Presence Detect Clock.
SDA
A55
I/O
SVDD
Serial Presence Detect Data (Open Collector I/O).
SIN
B36
I/O
VCMOS
Serial I/O for reading from and writing to the control registers.
Attaches to SIO0 of the first RDRAM device on the module.
SOUT
A36
I/O
VCMOS
Serial I/O for reading from and writing to the control registers.
Attaches to SIO1 of the last RDRAM device on the module.
SVDD
A56, B56
SWP
A57
VCMOS
A35, B35, A37, B37
CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT.
Vdd
A41, A42, A54, A58, B41, B42, B54,
B58
Supply voltage for the RDRAM core and interface logic.
Vref
A51, B51
Logic threshold reference voltage for RSL signals.
SPD Voltage. Used for signals SCL, SDA, SWE, SA0, SA1
and SA2.
I
SVDD
Page 4
Serial Presence Detect Write Protect (active high). When low,
the SPD can be written as well as read.
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
LDQA8
LDQA7
LDQA6
LDQA5
LDQA4
LDQA3
LDQA2
LDQA1
LDQA0
LCFM
LCFMN
LCTM
LCTMN
LROW2
LROW1
LROW0
LCOL4
LCOL3
LCOL2
LCOL1
LCOL0
LDQB0
LDQB1
LDQB2
LDQB3
LDQB4
LDQB5
LDQB6
LDQB7
LDQB8
SIN
LSCK
LCMD
VREF
Vdd
DQA8
DQA7
DQA6
DQA5
DQA4
DQA3
DQA2
DQA1
DQA0
CFM
CFMN
CTM
CTMN
ROW2
ROW1
ROW0
COL4
COL3
COL2
COL1
COL0
DQB0
DQB1
DQB2
DQB3
DQB4
DQB5
DQB6
DQB7
DQB8
SIO0
SIO1
SCK
CMD
Vref
2 per
RDRAM device
0.22/0.1µFa
U1
Direct RDRAM (256/288Mb)
Gnd
VREF
DQA8
DQA7
DQA6
DQA5
DQA4
DQA3
DQA2
DQA1
DQA0
CFM
CFMN
CTM
CTMN
ROW2
ROW1
ROW0
COL4
COL3
COL2
COL1
COL0
DQB0
DQB1
DQB2
DQB3
DQB4
DQB5
DQB6
DQB7
DQB8
SIO0
SIO1
SCK
CMD
Vref
1 per
2 RDRAM devices
Plus one
Near Connector
0.22/0.1µFa
U2
RDRAM Device(256/288Mb)
Gnd
VCMOS
DQA8
DQA7
DQA6
DQA5
DQA4
DQA3
DQA2
DQA1
DQA0
CFM
CFMN
CTM
CTMN
ROW2
ROW1
ROW0
COL4
COL3
COL2
COL1
COL0
DQB0
DQB1
DQB2
DQB3
DQB4
DQB5
DQB6
DQB7
DQB8
•
SIO0
SIO1
SCK
CMD
Vref
1 per
2 RDRAM devices
0.22/0.1µFa
U3
RDRAM Device(256/288Mb)
Gnd
•
•
•
•
•
a.
∗ 0.1 µF : 800MHz products
for 64/72MB, 128/144MB and
256/288MB
∗ 0.22 µF : the other products
DQA8
DQA7
DQA6
DQA5
DQA4
DQA3
DQA2
DQA1
DQA0
CFM
CFMN
CTM
CTMN
ROW2
ROW1
ROW0
COL4
COL3
COL2
COL1
COL0
DQB0
DQB1
DQB2
DQB3
DQB4
DQB5
DQB6
DQB7
DQB8
SIO0
SIO1
SCK
CMD
Vref
UN
RDRAM Device(256/288Mb)
RDQA8
RDQA7
RDQA6
RDQA5
RDQA4
RDQA3
RDQA2
RDQA1
RDQA0
RCFM
RCFMN
RCTM
RCTMN
RROW2
RROW1
RROW0
RCOL4
RCOL3
RCOL2
RCOL1
RCOL0
RDQB0
RDQB1
RDQB2
RDQB3
RDQB4
RDQB5
RDQB6
RDQB7
RDQB8
SOUT
RSCK
RCMD
Note 1. Rambus Channel signals form a loop through
the RIMM module, with the exception of the SIO chain.
Note 2. See Serial Presence Detection Specification for
information on the SPD device and its contents.
SVDD
SCL
SWP
47KΩ
SA0
SA1
SA2
Module
Capacity
N
512/576MB
16
256/288MB
8
128/144MB
4
64/72MB
2
Serial Presence Detect
Vcc
SCL
SDA
WP
A0 A1 A2
SVDD
SDA
U0
0.22/0.1µFa
Gnd
Figure 2: RIMM Module Functional Diagram
Page 5
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
Absolute Maximum Ratings
Table 4: Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
VI,ABS
Voltage applied to any RSL or CMOS signal pad with respect to Gnd
- 0.3
VDD + 0.3
V
VDD,ABS
Voltage on VDD with respect to Gnd
- 0.5
VDD + 1.0
V
TSTORE
Storage temperature
- 50
100
°C
TPLATE
Plate temperature
-
92
°C
DC Recommended Electrical Conditions
Table 5: DC Recommended Electrical Conditions
Symbol
Parameter and Conditions
Min
Max
Unit
2.50 - 0.13
2.50 + 0.13
V
VDD
Supply voltage
VCMOS
CMOS I/O power supply at pad for 2.5V controllers:
CMOS I/O power supply at pad for 1.8V controllers:
VDD
1.8 - 0.1
VDD
1.8 + 0.2
V
V
VREF
Reference voltage
1.4 - 0.2
1.4 + 0.2
V
VSPD
Serial Presence Detector- Positive power supply
2.2
3.6
V
Table 6: RIMM Module Capacity and Number of RDRAM device
RIMM Module Capacity:
Number of 256/288Mb RDRAM devices
512/576MB
256/288MB
128/144MB
64/72MB
16
8
4
2
Page 6
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
RIMM Module Current Profile
Table 7: RIMM Module Current Profile
IDD
RIMM Module Capacity
512/576MB
256/288MB
128/144MB
64/72MB
Number of 256/288Mb RDRAM
devices
16
8
4
2
Freq
Max
Max
Max
Max
One RDRAM device in Readb,
balance in NAP mode
-1066
- /853c
- /821
- /805
- /797
-800
620/670
588/638
572/622
564/614
One RDRAM device in Readb,
balance in Standby mode
-1066
- /2818
- /1738
- /1198
- /928
-800
1760/1810
1120/1170
800/850
640/690
One RDRAM device in Readb,
balance in Active mode
-1066
- /4018
- /2298
- /1438
- /1008
-800
2360/2410
1400/1450
920/970
680/730
One RDRAM device in Write,
balance in NAP mode
-1066
- /944
- /912
- /896
- /888
-800
680/740
648/708
632/692
624/684
One RDRAM device in Write,
balance in Standby mode
-1066
- /2909
- /1829
- /1289
- /1019
-800
1820/1880
1180/1240
860/920
700/760
One RDRAM device in Write,
balance in Active mode
-1066
- /4109
- /2389
- /1529
- /1099
-800
2420/2480
1460/1520
980/1040
740/800
RIMM Module power
conditions a
IDD1
IDD2
IDD3
IDD4
IDD5
IDD6
Unit
mA
mA
mA
mA
mA
mA
a. Actual power will depend on memory controller and usage patterns. Power does not include Refresh Current.
b. I/O current is a function of the % of 1’s, to add I/O power for 50% 1’s for a X16 need to add 257mA or 290mA for X18 ECC module for the following:
VDD = 2.5V, VTERM = 1.8V, VREF = 1.4V and VDIL = VREF - 0.5V.
c. Current values represent X16(Non-Ecc) / X18(Ecc)
Page 7
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
AC Electrical Specifications
Table 8: AC Electrical Specifications
Symbol
Parameter and Conditions
Min
Typ
Max
Unit
ZL
Module Impedance of RSL Signals
25.2
28
30.8
Ω
ZUL-CMOS
Module Impedance of SCK and CMOS signals
23.8
28
32.2
Ω
TPD
Propagation Delay variation of RSL signals. Average clock
delay from finger to finger of all RSL clock nets (CTM,
CTMN, CFM, and CFMN)
See
Table10a,b
ns
∆TPD
-
Propagation delay variation of RSL signals with respect to TPD b,c
for 2, 4 and 8 device modules
-21
21
Propagation delay variation of RSL signals with respect to TPD b,c
for 16 device modules
-24
24
∆TPD-CMOS
Propagation delay variation of SCK signals with respect to an
average clock delay
-250
250
∆TPD-SCK,CMD
Propagation delay variation of CMD signals with respect to SCK
signal
-200
200
Vα/VIN
Attenuation Limit
See
Table10a
%
VXF/VIN
Forward crosstalk coefficient (300ps input rise time @ 20%-80%)
See
Table10a
%
VXB/VIN
Backward crosstalk coefficient (300ps input rise time @ 20%80%)
See
Table10a
%
ps
ps
ps
ps
a. Table 10 lists parameters and specifications for different storage capacity RIMM Modules that use 256Mb or 288Mb RDRAM devices.
b. TPD or Average clock delay is defined as the delay from finger to finger of RSL signal.
c. If the RIMM module meets the following specification, then it is compliant to the specification. If the RIMM module does not meet these specifica
tions, then the specification can be adjusted by the “Adjusted ∆TPD Specification“ table 9 below.
Adjusted ∆TPD Specification
Table 9: Adjusted ∆TPD Specification
Symbol
∆TPD
a. Where:
Parameter and Conditions
Adjusted Min/Max
Absolute
Min / Max
Propagation delay variation of RSL signals with respect to
TPD for 2, 4 and 8 device modules
+/-[20+(18*N*∆Z0)]a
-30
30
Propagation delay variation of RSL signals with respect to
TPD for 16 device modules
+/-[24+(18*N*∆Z0)]a
-50
50
Unit
ps
ps
N = Number of RDRAM devices installed on the RIMM module
∆Z0 = delta Z0% = (max Z0 - min Z0)/(min Z0)
(max Z0 and min Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers on the modules)
Page 8
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
AC Electrical Specifications for RIMM Modules
Table 10: AC Electrical Specifications for RIMM Modules
Symbol
RIMM Module Capacity
512/576MB
256/288MB
128/144MB
64/72MB
Number of 256/288Mb RDRAM devices
16
8
4
2
Freq.
Max
Max
Max
Max
-1066
2.11
1.56
1.56
1.56
-800
2.11
1.56
1.56
1.56
-1066
27.0
17.0
17.0
17.0
-800
25.0
16.0
16.0
16.0
Parameter and Condition for RIMM
Modules
TPD
Propagation Delay, all RSL signals
Vα/VIN
Attenuation Limit
Forward crosstalk coefficient
(300ps input rise time @ 20%-80%)
-1066
8.0
4.0
4.0
4.0
VXF/VIN
-800
8.0
4.0
4.0
4.0
Backward crosstalk coefficient
(300ps input rise time @ 20%-80%)
-1066
2.5
2.0
2.0
2.0
VXB/VIN
-800
2.5
2.0
2.0
2.0
-1066
1.2
0.8
0.6
0.6
RDC
DC Resistance Limit
-800
1.2
0.8
0.6
0.6
Unit
ns
%
%
%
Page 9
Ω
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
Physical Dimensions -1 ( For PCB )
The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate.
The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005].
133.35±0.127[5.250±0.005]
6.35[0.25]
3.00[0.118]
120.65[4.75]
4.00±0.15
[0.157±0.006]
DIA 2.44
17.78[0.700]
29.21[1.15]
31.75[1.25]
COMPONENT AREA
(A SIDE)
R 2.00
+
+
7.468[0.294]
A-1
DETAIL A
1.00[0.039]
45.00[1.772]
5.68[0.2236]
A-92
DETAIL B
11.50[0.453]
4.50[0.177]
55.175±0.08[2.172±0.003]
45.00[1.772]
R 1.00
78.175[3.078]
B-1
8.60[0.339]
B-92
COMPONENT AREA
(B SIDE)
Min.6.35[0.25]
Note : The gray area above represents the contact surface of the heat spreader.
0.80±0.10
[0.031±0.004]
Heat spreader
3.00±0.10
[0.12±0.004]
1.00[0.039]
Min.4.88
[0.192]
0.15±0.10
[0.006±0.004]
2.99±0.05
[0.12±0.002]
2.00±0.10
[0.079±0.004]
DETAIL A
DETAIL B
Figure 3: 256Mb base RIMM Module PCB Physical Dimensions
Page 10
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
Physical Dimensions -2 ( For PCB )
The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate.
The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005].
133.35±0.127[5.250±0.005]
6.35[0.25]
3.00[0.118]
120.65[4.75]
4.00±0.15
[0.157±0.006]
DIA 2.44
17.78[0.700]
29.21[1.15]
34.93[1.375]
COMPONENT AREA
(A SIDE)
R 2.00
+
+
7.468[0.294]
A-1
DETAIL A
1.00[0.039]
45.00[1.772]
5.68[0.2236]
A-92
DETAIL B
11.50[0.453]
4.50[0.177]
55.175±0.08[2.172±0.003]
45.00[1.772]
R 1.00
78.175[3.078]
B-1
8.60[0.339]
B-92
COMPONENT AREA
(B SIDE)
Min.6.35[0.25]
Note : The gray area above represents the contact surface of the heat spreader.
0.80±0.10
[0.031±0.004]
Heat spreader
3.00±0.10
[0.12±0.004]
1.00[0.039]
Min.4.88
[0.192]
0.15±0.10
[0.006±0.004]
2.99±0.05
[0.12±0.002]
2.00±0.10
[0.079±0.004]
DETAIL A
DETAIL B
Figure 4: 288Mb base RIMM Module PCB Physical Dimensions
Page 11
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
Physical Dimensions -3 ( For Heat Spreader )
The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate.
The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005].
127±0.25[5.0±0.009]
120.66±0.12[4.748±0.005]
108.81±0.12[4.283±0.005]
2.9 [0.114]
Center-Point
WARNING ! HOT SURFACE
http://www.samsungsemi.com
26.54[1.045]
13.7[0.539]
DIA 2.36±0.05[0.09±0.001]
1.00±0.07
[0.04±0.002]
12.7±0.07[0.5±0.002]
12.7±0.07[0.5±0.002]
133.35±0.127[5.250±0.005]
127±0.25[5.0±0.009]
A
31.75[1.25]
http://www.samsungsemi.com
26.54[1.045]
WARNING ! HOT SURFACE
A
SECTION A-A
SECTION A-A
Max 7.80
[0.307]
Max 4.70
[0.185]
Heat Spreader
Heat Spreader
CSP
CSP
Thermal
Conductive
Gap Filling
Material
Thermal
Conductive
Gap Filling
Material
PCB
PCB
1.27±0.10
[0.050±0.004]
1.27±0.10
[0.050±0.004]
[ Single side module ]
[ Double side module ]
Figure 5: Heat Spreader Physical Dimensions
Page 12
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
Physical Dimensions -4 ( For Heat Spreader )
The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate.
The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005].
127±0.25[5.0±0.009]
120.66±0.12[4.748±0.005]
108.81±0.12[4.283±0.005]
2.9 [0.114]
Center-Point
WARNING ! HOT SURFACE
http://www.samsungsemi.com
29.42[1.158]
16.5[0.649]
DIA 2.36±0.05[0.09±0.001]
1.00±0.07
[0.04±0.002]
12.7±0.07[0.5±0.002]
12.7±0.07[0.5±0.002]
133.35±0.127[5.250±0.005]
127±0.25[5.0±0.009]
A
34.93[1.375]
http://www.samsungsemi.com
29.42[1.158]
WARNING ! HOT SURFACE
A
SECTION A-A
SECTION A-A
Max 7.80
[0.307]
Max 4.70
[0.185]
Heat Spreader
Heat Spreader
CSP
CSP
Thermal
Conductive
Gap Filling
Material
Thermal
Conductive
Gap Filling
Material
PCB
PCB
1.27±0.10
[0.050±0.004]
1.27±0.10
[0.050±0.004]
[ Single side module ]
[ Double side module ]
Figure 6: Heat Spreader Physical Dimensions
Page 13
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
Standard RIMM Module Marking
The RIMM modules available from Samsung are marked
like Figure 7 below. This marking also assists users to
specify and verify if the correct RIMM modules are installed
in their systems. In the diagram, a label is shown attached to
A
B
C
E
D
F
the RIMM module’s heat spreader. Information contained on
the label is specific to the RIMM module and provides
RDRAM device information without requiring removal of
the RIMM module’s heat spreader.
G
KOREA 0230 512MB /16 ECC
MR18R162GAF0-CT9 1066-32P 102
L
J
K
Label Field
I
H
Description
Marked Text
Unit
A
Vendor Logo
RIMM Module Vendor SAMSUNG Logo Area
SAMSUNG
-
B
Country
Country of origin
KOREA
-
C
Year & Week
code
Manufactured Year & Week code
yyww
-
D
Module Memory
Capacity
Number of 8-bit or 9-bit MBytes of RDRAM storage in
RIMM module
64MB, 128MB, 256MB, 512MB
-
E
Number of
RDRAM devices
Number of RDRAM devices contained in the RIMM
module
2/4/8/16
F
ECC Support
Indicates whether the RIMM module supports 8 (non
ECC) or 9 (ECC) bit Bytes
blank = 8 bit Bytes
ECC = 9 bit Bytes
-
G
Notice!
Hot surface caution notice.
-
-
H
Caution Logo
ISO Standard
-
-
RDRAM
devices
Gerber : 10 = 1.0 ver.
I
Gerber & SPD
Version
PCB Gerber file & SPD code version used on RIMM
Module
01 = 0.1 ver.
SPD : 1 = 1.1 ver.
-
2 = 1.3 ver.
J
tRAC
Row Access Time
-32P, -32, -40, -45
K
Memory Speed
Data transfer speed for RDRAM devices
1066, 800
L
Part No.
SAMSUNG RIMM Module part No.
See Table 1
ns
MHz
-
Figure 7: RIMM Module Marking Example
Page 14
Version 1.4 July 2002
MR16R1622(4/8/G)AF0
MR18R1622(4/8/G)AF0(1)
Table Of Contents
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Key Timing Parameters/Part Numbers . . . . . . . . . . . . . . . . 1
Module Pad Numbers and Signal Names . . . . . . . . . . . . . . 2
Module Connector Pad Description . . . . . . . . . . . . . . . 3 - 4
RIMM Module Functional Diagram . . . . . . . . . . . . . . . . . . 5
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . 6
DC Recommended Electrical Conditions . . . . . . . . . . . . . . 6
RIMM Module Supply Current Profile . . . . . . . . . . . . . . . . 7
AC Electrical Specifications . . . . . . . . . . . . . . . . . . . . . 8 - 9
Physical Dimensions -1, -2 ( For PCB ) . . . . . . . . . . 10 - 11
Physical Dimensions -3, -4 ( For Heat Spreader). . . 12 - 13
Standard RIMM Module Marking. . . . . . . . . . . . . . . . . . . 14
Copyright © July 2002, Samsung Electronics.
All rights reserved.
Direct Rambus, Direct RDRAM and SO-RIMM are trademarks of Rambus Inc. Rambus, RDRAM, RIMM and the
Rambus Logo are registered trademarks of Rambus Inc.
This document contains advanced information that is subject
to change by Samsung Electronics without notice
Document Version 1.4
Samsung Electronics Co. Ltd.
San #16 Banwol-ri, Taean-Eup Hwasung-City,
Gyeonggi-Do, KOREA
Telephone: 82-31-208-6369
Fax: 82-31-208-6799
http://www.intl.samsungsemi.com
Page 15
Version 1.4 July 2002