LINEAR INTEGRATED CIRCUIT S1P2655A01/02/03/04/05 INTRODUCTION HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16−DIP The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04 and S1P2655A05 are comprised of saven high voltage, high current NPN darlington transistors arrays with common emitter, open collector outputs. Suppression diodes are included for inductive load driving and the inputs are pinned opposite the outputs to simplify board layout. Peak inrush currents to 600mA permit them to drive incandescent lamps. The S1P2655A01 is a general purpose array for use with DTL, 16−SOP TTL, PMOS or CMOS logic directly. The S1P2655A02 version does away with the need for any external discrete resistors, since each usit has a resistor and a zener diode in series with the input. The S1P2655A02 is designed for use with 14 to 25V PMOS devices. The zener diode also gives these devices excellent noise immunity. The S1P2655A03 has a series base resistor to each darlington pair, and thus allows operation directly with TTL or CMOS operating at supply voltages of 5V. The S1P2655A03 will handle numberous interfaces needs-particularly those beyond the capailities of standard logic buffers. The S1P2655A04 has an appropriate input resistor to allow direct operation from CMOS or PMOS outputs operating supply voltage of 6V to 15V. The S1P2655A05 is designed for use with standard TTL and Schottky TTL, with which hinger output currents are required and loading of the logic output is not a concern. These devices will sink a minimum of 350mA when driven from a “totempole” logic output. These versatile devices are useful for driving a wide range of loads including Solenoids, Relays, DC motors, LED displays, Filament lamps, thermal printheads and high power buffer. Applications requiriing sink currents beyonds the capability of a single output may be accomodated by paralleling the outputs. APPLICATIONS • Relay driver • DC motor driver • Solenoids driver • LED display driver • Filament lamp driver • High power buffer • Thermal print head driver 1 S1P2655A01/02/03/04/05 LINEAR INTEGRATED CIRCUIT OPERAING INFORMATION Device Package S1P2655A01-D0B0 16-DIP S1P2655A01-S0B0 16-SOP S1P2655A02-D0B0 16-DIP S1P2655A02-S0B0 16-SOP S1P2655A03-D0B0 16-DIP S1P2655A03-S0B0 16-SOP S1P2655A04-D0B0 16-DIP S1P2655A04-S0B0 16-SOP S1P2655A05-D0B0 16-DIP S1P2655A05-S0B0 16-SOP Input Level Operating Temperature DTL, TTL, PMOS, CMOS PMOS TTL, CMOS −20 − +85°C CMOS, PMOS TTL ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Symbol Value Unit Output Voltage Vo 50 V Input Voltage (S1P2655A02/03/04) VIN 30 V (S1P2655A05) 15 Continuous Collector Current Ic 500 mA Continuous Input Current IIN 25 mA Power Dissipation PD 1.0 W Operating Temperature Topr − 20 − + 85 °C Storage Temperature Tstg − 55 − + 150 °C 2 LINEAR INTEGRATED CIRCUIT S1P2655A01/02/03/04/05 ELECTRICAL CHARACTERISTICS (Ta = 25°C, unless otherwise noted) Characteristic Symbol Test Condition VCE = 50V, Ta = 25°C, VIN = open Min. Typ. Max. − − 50 − 100 VCE = 50V, Ta = 70°C, VIN = open Output Leakage Current Output Saturation Voltage ILK Vsat VCE = 50V, Ta = 70°C, VIN = 6.0V (S1P2655A02) − − 500 VCE = 50V, Ta = 70°C, VIN = 1.0V (S1P2655A04) − − 500 IC = 100mA, IIN = 250µA − 0.9 1.1 IC = 200mA, IIN = 350µA −− 1.1 1.3 1.25 1.6 IC = 350mA, IIN = 500µA Input Current 1 (Off Condition) Input Current 2 (On Condition) Input Voltage IIN 1 IIN 2 VIN IC = 500mA, Ta = 70°C 50 65 − VIN = 17V (S1P2655A02), Vo = open − 0.85 1.3 VIN = 3.85V (S1P2655A03), Vo = open − 0.93 1.35 VIN = 5V (S1P2655A04), Vo = open − 0.35 0.5 VIN = 12V (S1P2655A04), Vo = open − 1.0 1.45 VIN = 3.0V (S1P2655A05), Vo = open − 1.5 2.4 VCE = 2.0V, Ic = 300mA (S1P2655A02) − − 13 VCE = 2.0V, Ic = 200mA (S1P2655A03) − − 2.4 VCE = 2.0V, Ic = 250mA (S1P2655A03) − − 2.7 VCE = 2.0V, Ic = 300mA (S1P2655A03) − − 3.0 VCE = 2.0V, Ic = 125mA (S1P2655A04) − − 5.0 VCE = 2.0V, Ic = 200mA (S1P2655A04) − − 6.0 VCE = 2.0V, Ic = 275mA (S1P2655A04) − − 7.0 VCE = 2.0V, Ic = 350mA (S1P2655A04) − − 8.0 VCE = 2.0V, Ic = 350mA (S1P2655A05) − − 2.4 Unit µA V µA mA V DC Current Gain hFE VCE = 2.0V, Ic = 350mA (S1P2655A05) 1000 − − − Input Capacitance CIN − − 15 30 pF Proparation Delay Time Clamp Diode Leakage Current Clamp Diode Forward Voltage tON 0.5 VIN to 0.5 Vo − 0.25 1.0 µs tOFF 0.5 VIN to 0.5 Vo − 0.25 1.0 µs VIN = open, Vo = GND, VR = 50V, Ta = 25°C − − 50 µA VIN = open, Vo = GND, VR = 50V, Ta = 70°C − − 100 µA IF = 350mA − 1.7 2.0 V IR VF 3 S1P2655A01/02/03/04/05 LINEAR INTEGRATED CIRCUIT PIN CONFIGURATION 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Figure 1. 4 LINEAR INTEGRATED CIRCUIT S1P2655A01/02/03/04/05 SCHEMATIC DIAGRAMS S1P2655A01 (each driver) S1P2655A02 (each driver) COM COM 7V 10.5V 7.2K 3K 7.2K 3K Figure 2. Figure 3. S1P2655A03 (each driver) S1P2655A04 (each driver) COM 2.7K COM 10.5K 7.2K 3K 7.2K 3K Figure 4. Figure 5. S1P2655A05 (each driver) COM 1.05K 7.2K 3K Figure 6. 5 S1P2655A01/02/03/04/05 LINEAR INTEGRATED CIRCUIT TYPICAL APPLICATIONS PMOS TO LOAD S1P2655A02 TTL TO LOAD S1P2655A03/05 +V +V 1 16 1 16 2 15 2 15 3 14 3 14 4 13 4 13 5 12 5 12 6 11 6 11 7 10 7 10 8 9 8 9 TTL OUTPUT PMOS OUTPUT LAMP TEST Figure 7. Figure 8. Buffer for High-current Load S1P2655A04 USE of Pull-up Resistors to Increase Drive Current S1P2655A03 +V 1 +VCC +V 16 2 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 15 3 14 4 13 5 12 6 11 CMOS OUTPUT 7 10 OUTPUT 8 9 Figure 9. 6 Figure 10.