UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability 3 • Solder dip 260 °C, 40 s 2 1 • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TO-247AD (TO-3P) PIN 1 PIN 2 PIN 3 CASE TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 50 V to 200 V IFSM 300 A trr 25 ns VF 0.85 V TJ max. 150 °C MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current at TC = 120 °C IF(AV) 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 300 A TJ, TSTG - 65 to + 150 °C Operating and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode Maximum DC reverse current at rated DC blocking voltage per diode Document Number: 88762 Revision: 05-Jun-08 TEST CONDITIONS 15 A 30 A 10 A SYMBOL UG30BPT UG30CPT UG30DPT UNIT VF 1.0 1.15 0.85 V IR 15 800 µA TJ = 100 °C TA = 25 °C TA = 100 °C UG30APT For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 UG30APT thru UG30DPT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Maximum reverse recovery time IF = 15 A, VR = 30 V, dI/dt = 50 A/µs, IRR = 10 % IRM Maximum recovered stored charge IF = 15 A, VR = 30 V, dI/dt = 50 A/µs, IRR = 10 % IRM Typical junction capacitance 4.0 V, 1 MHz SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT trr 25 ns TJ = 25 °C TJ = 100 °C trr 35 50 ns TJ = 25 °C TJ = 100 °C Qrr 22 50 nC CJ 70 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode (1) UG30APT RθJC UG30BPT UG30CPT UG30DPT 2.0 UNIT °C/W Note: (1) Thermal resistance from junction to case per diode mounted on heatsink ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-247AD UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 6.15 30 30/tube Tube UG30DPT-E3/45 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) 36 30 24 18 12 6 0 TC = 120 °C 8.3 ms Single Half Sine-Wave 100 10 0 25 50 75 100 125 150 175 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Figure 1. Maximum Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88762 Revision: 05-Jun-08 UG30APT thru UG30DPT Vishay General Semiconductor 60 10 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 1 0.1 0.01 0.4 IF = 15 A VR = 30 V Recovered Store Change/Reverse Recovery Time (nC/ns) Instantaneous Forward Current (A) 100 40 dI/dt = 100 A/µs dI/dt = 50 A/µs dI/dt = 100 A/µs 30 dI/dt = 150 A/µs dI/dt = 50 A/µs dI/dt = 20 A/µs 20 10 0 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 Junction Temperature (°C) Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Reverse Switching Characteristics Per Diode 1000 100 TJ = 100 °C 100 Junction Capacitance (pF) Instantaneous Reverse Leakage Current (µA) dI/dt = 150 A/µs dI/dt = 20 A/µs 50 10 TJ = 25 °C 1 0.1 10 TJ = 125 °C f = 1.0 MHz Vsig = 50 mVp-p 0.01 0 20 40 60 80 1 0.1 100 1 Percent of Rated Peak Reverse Voltage (%) 10 100 Reverse Voltage (V) Figure 4. Typical Reverse Leakage Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-247AD (TO-3P) 0.645 (16.4) 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30° 0.078 (1.98) REF. 10 0.170 (4.3) 0.840 (21.3) 0.142 (3.6) 0.138 (3.5) 0.820 (20.8) 1 2 10° TYP. Both Sides 3 1° REF. Both Sides 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.117 (2.97) 0.118 (3.0) 0.108 (2.7) 0.795 (20.2) 0.775 (19.6) 0.048 (1.22) 0.044 (1.12) 0.225 (5.7) 0.205 (5.2) Document Number: 88762 Revision: 05-Jun-08 0.030 (0.76) 0.020 (0.51) PIN 1 PIN 2 PIN 3 CASE For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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