VISHAY TP0101K-T1-GE3

TP0101K
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 20
ID
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• ESD Protected: 3000 V
(A)e
0.65 at VGS = - 4.5 V
- 0.58
0.85 at VGS = - 2.5 V
- 0.5
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems, DC/DC Converters
• Power Supply Converter Circuits
• Load/Power Switching-Cell Phones, Pagers
D
TO-236
(SOT-23)
Marking Code: K4ywl
G
100 Ω
1
G
K4 = Part Number Code for TP0101K
3
D
2
S
y = Year Code
w = Week Code
l = Lot Traceability
Top View
S
Ordering Information: TP0101K-T1-E3 (Lead (Pb)-free)
TP0101K-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)b
TA = 25 °C
TA = 70 °C
Pulsed Drain Currenta
Continuous Source-Drain (Diode Current)b
TA = 25 °C
Power Dissipationb
TA = 70 °C
V
- 0.58
ID
- 0.46
IDM
-2
IS
- 0.3
A
0.35
PD
W
0.22
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 150
°C
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 10 s.
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance,
Junction-to-Ambientb
Symbol
Limits
Unit
RthJA
357
°C/W
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 72692
S-83053-Rev. B, 29-Dec-08
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1
TP0101K
Vishay Siliconix
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
- 0.7
- 1.0
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
VDS
VGS = 0 V, ID = - 10 µA
- 20
VGS(th)
VDS = VGS, ID = - 50 µA
- 0.5
IGSS
VDS = - 0 V, VGS = ± 4.5 V
±5
VDS = - 20 V, VGS = 0 V
-1
IDSS
ID(on)
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
µA
- 10
VDS ≤ - 5 V, VGS = - 4.5 V
- 1.2
VDS ≤ - 5 V, VGS = - 2.5 V
- 0.5
A
VGS = - 4.5 V, ID = - 0.58 A
0.42
0.65
VGS = - 2.5 V, ID = - 0.5 A
0.64
0.85
gfs
VDS = - 5 V, ID = - 0.58 A
1300
VSD
IS = - 0.3 A, VGS = 0 V
- 0.9
- 1.2
1400
2200
RDS(on)
V
Ω
mS
V
b
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Time
Turn-Off Time
VDS = - 6 V, VGS = - 4.5 V
ID ≅ - 0.58 A
td(off)
tf
250
Ω
150
td(on)
tr
pC
300
VDD = - 6 V, RL = 10 Ω
ID ≅ - 0.58 A, VGEN = - 4.5 V, Rg = 6 Ω
25
35
30
45
55
85
38
60
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 72692
S-83053-Rev. B, 29-Dec-08
TP0101K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
2.0
TJ = - 55 °C
VGS = 5 thru 3 V
2.5 V
1.6
I D - Drain Current (A)
I D - Drain Current (A)
1.6
1.2
2V
0.8
1V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.2
125 °C
0.8
0.4
1.5 V
0.4
25 °C
0.0
0.0
4.0
0.5
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.0
200
175
2.5
Ciss
150
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1.0
2.0
1.5
VGS = 2.5 V
1.0
125
100
75
Coss
50
VGS = 4.5 V
Crss
0.5
25
0.0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
4
ID - Drain Current (A)
8
16
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
5
1.7
VDS = 6 V
ID = 0.6 A
4
1.5
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
12
3
2
1
0
0.0
VGS = 4.5 V
ID = 0.6 A
1.3
1.1
0.9
0.3
0.6
0.9
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 72692
S-83053-Rev. B, 29-Dec-08
1.2
1.5
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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TP0101K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
4
TJ = 150 °C
2.5
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
1
0.1
TJ = 25 °C
0.01
2.0
ID = 0.6 A
1.5
1.0
0.5
0.001
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
100 000
10 000
0.3
ID = 50 µA
I GSS - Gate Current (µA)
V GS(th) Variance (V)
1
VSD - Source-to-Drain Voltage (V)
0.2
0.1
0.0
1000
100
TJ = 150 °C
10
1
0.1
TJ = 25 °C
- 0.1
0.01
- 0.2
- 50
0.001
- 25
0
25
50
75
100
125
150
0
4
2
TJ - Temperature (°C)
6
8
10
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
Gate Current vs. Gate-Source Voltage
10
5
IDM Limited
RDS(on) Limited *
I D - Drain Current (A)
Power (W)
4
3
2
1
1 ms
10 ms
ID(on)
Limited
0.1
1s
10 s
DC
TA = 25 °C
Single Pulse
0.01
1
100 ms
BVDSS Limited
0
0.01
0.001
0.1
1
10
100
Time (s)
Single Pulse Power, Junction-to-Ambient
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4
600
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 72692
S-83053-Rev. B, 29-Dec-08
TP0101K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72692.
Document Number: 72692
S-83053-Rev. B, 29-Dec-08
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5
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
Min
INCHES
Max
Min
Max
0.044
A
0.89
1.12
0.035
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
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1
AN807
Vishay Siliconix
Mounting LITTLE FOOTR SOT-23 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
ambient air. This pattern uses all the available area underneath the
body for this purpose.
0.114
2.9
0.081
2.05
0.150
3.8
0.059
1.5
0.0394
1.0
0.037
0.95
FIGURE 1. Footprint With Copper Spreading
The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.
Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the
Document Number: 70739
26-Nov-03
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.
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Application Note 826
Vishay Siliconix
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
Document Number: 72609
Revision: 21-Jan-08
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25
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000