THYRISTOR MODULE PK(PD,PE,KK)40F UL:E76102 （M） 17.5 150 A/μs 500V/μs 3.5 ● di/dt 92 20 20 25 12.5 12 ● IT(AV) 40A, IT(RMS) 62A, ITSM 1300A 20 ● dv/dt M5X10 K2 G2 2 1 （K2） K1 G1 （A2） 3 A1K2 2 PK PE K2 3 A1K2 2 1 （K2） #110TAB 1 K1 （A2） （K2） K1 G1 （A2） 2 1 K1 G1 （A2） （A1） PD 80±0.2 K2 G2 1 6.5 29max 3 A1K2 2.8 K2 G2 31max 19.5 （Applications） Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches 7.5 3.5 2- 6 K1 G1 K2 G2 Power Thyristor/Diode Module PK40F series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. High precision 25mm (1inch) width package and electrically isolated mounting base make your mechanical design easy. Unit：A KK ■Maximum Ratings Ratings Symbol VRRM VRSM VDRM Symbol IT（AV） IT（RMS） ITSM I2t PGM PG（AV） IFGM VFGM VRGM di／dt VISO Tj Tstg Item ＊Repetitive Peak Reverse Voltage ＊Non-Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage Item ＊Average On-State Current ＊R.M.S. On-State Current ＊Surge On-State Current ＊I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage (Forward) Peak Gate Voltage (Reverse) Critical Rate of Rise of On-State Current ＊Isolation Breakdown Voltage (R.M.S.) ＊Operating Junction Temperature ＊Storage Temperature Mounting（M5） Mounting Torque Terminal（M5） Mass PK40F40 PD40F40 PE40F40 KK40F40 PK40F80 PD40F80 PE40F80 KK40F80 PK40F120 PD40F120 PE40F120 KK40F120 PK40F160 PD40F160 PE40F160 KK40F160 400 480 400 800 960 800 1200 1300 1200 1600 1700 1600 Conditions Single phase, half wave, 180°conduction, Tc：96℃ Single phase, half wave, 180°conduction, Tc：96℃ 1 ／2cycle, 50Hz/60Hz, peak Value, non-repetitive Value for one cycle of surge current IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs A.C.1minute Recommended Value 1.5-2.5（15-25） Recommended Value 1.5-2.5（15-25） Unit V V V Ratings 40 62 1200/1300 7200 10 3 3 10 5 150 2500 −40 to ＋125 −40 to ＋125 2.7（28） 2.7（28） 170 Unit A A A A2S W W A V V A/μs V ℃ ℃ N･ｍ （㎏f･B） g Ratings 15 15 1.40 70/3 0.25 10 500 50 100 0.55 Unit mA mA V mA/V V μs V/μs mA mA ℃/W ■Electrical Characteristics Symbol Item DRM I Repetitive Peak Off-State Current, max. IRRM ＊Repetitive Peak Reverse Current, max. VTM ＊Peak On-State Voltage, max. IGT／VGT Gate Trigger Current/Voltage, max. VGD Non-Trigger Gate, Voltage. min. tgt Turn On Time, max. Critical Rate of Rise of Off-State Voltage, min. dv／dt IH Holding Current, typ. IL Lutching Current, typ. Rth（j-c）＊Thermal Impedance, max. Conditions at VDRM, single phase, half wave, Tj＝125℃ at VDRM, single phase, half wave, Tj＝125℃ On-State Current 120A, Tj＝25℃ Inst. measurement Tj＝25℃，IT＝1A，VD＝6V Tj＝125℃，VD＝1／2VDRM IT＝40A，IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs Tj＝125℃, VD＝2／3VDRM, Exponential wave. Tj＝25℃ Tj＝25℃ Junction to case ＊mark：Thyristor and Diode part. No mark：Thyristor part SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] ;; PK(PD,PE,KK)40F Gate Characteristics Peak Forward Gate Voltage（10V） Av er ag e ５ ２ ５ Pe Po ak G we a （ r te 10 Ga W ） te Po we （ r 3W ） １００ ５ 125℃ ２ 25℃ On-State Current（A） −30℃ ２ １０２ ５ ２ ５ １０３ １０２ ５ ２ １０１ Maximum Gate Voltage that will not trigger any unit １０−１ −１ １０ ２ ２ ５ ０ ５ １ ２ Gate Current（mA） Average On-State Current Vs Power Dissipation （Single phase half wave） １３０ Allowable Case Temperature（℃） Power Dissipation（W） ８０ D.C. ７０ ５０ ４０ Per one element 2 。 360 2 θ＝60゜ 。 360 : Conduction Angle ２０ ０ ０ １０ ２０ ３０ ４０ : Conduction Angle １００ θ＝30゜ ３０ ５０ ６０ ７０ ８０ ９０ ８０ ７０ θ＝60゜ θ＝120゜ θ＝180゜ θ＝30゜ θ＝90゜ ６０ ５０ ０ １０ Average On-State Current（A） ２０ ３０ ４０ D.C. ５０ ６０ ７０ ８０ Average On-State Current（A） Transient Thermal Impedance θj-c（℃/W） Surge On-State Current Rating （Non-Repetitive） １． ０ Per one element Ｔ ｊ=２５℃ start Surge On-State Current（A） ５ Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） １１０ θ＝180゜ θ＝120゜ θ＝90゜ １０ Transient Thermal Impedance Per one element ０． ９ Junction to case ０． ８ １２００ ０． ７ ０． ６ ８００ ０． ５ 60Hz ０． ４ 50Hz ０． ３ ４００ ０． ２ ０． １ ０ 0 １０ ２ ５ １０１ ２ １０2 ５ ０ -３ １０ １０-２ １０-１ １００ ４００ Output Current W１；Bidirectional connection B２；Two Pluse bridge connection Conduction Angle 180゜ ２００ B6 Rth:1.0℃/W Rth:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.2℃/W Rth:0.1℃/W Rth:1.0℃/W Rth:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.2℃/W B2 ９０ W1 １００ １１０ Output Current（A） ４０ ８０ １２０ １０３ １０４ B６；Six pulse bridge connection Ｗ３；Three phase bidiretional connection ９０ １２０ １２５ Ambient Temperature（℃） ０ ４０ ８０ １２０ Ambient Temperature（℃） Rth:0.8℃/W Rth:0.6℃/W Rth:0.4℃/W Rth:0.2℃/W Rth:0.1℃/W ９０ １００ １１０ １００ ０ ２０ ４０ ６０ ８０ １００ ０ １０２ Id（Aav.） Id（Ar.m.s.） W3 ３００ １０１ Time t（sec） Time（Cycles） Total Power Dissipation（W） 4 １２０ Per one element ６０ １６００ ３ On-State Voltage（V） １２０ １２５ ０ １００ １１０ Id（Aav.） １２０ Id（Ar.m.s.） １２５ ４０ ８０ １２０ Ambient Temperature（℃） Allowable Case Temperature（℃） Gate Voltage（V） １０１ On-State Voltage max １０3 Peak Gate Current（3A） ２