Ordering number : ENN6912 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Current Switching Applications Features Package Dimensions DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2045B Features 7.0 1.5 5.5 0.5 0.85 0.7 1.2 7.5 0.8 1.6 0.6 0.5 1 2 1 : Base 2 : Collector 3 : Emitter 4 : Collector 3 2.3 SANYO : TP 2.3 Package Dimensions unit : mm 2044B [2SA2039 / 2SC5706] 6.5 5.0 4 2.3 0.5 0.5 0.85 1 0.6 2.3 2 1.2 • 1.5 • 2.3 7.0 • 6.5 5.0 4 5.5 • [2SA2039 / 2SC5706] Adoption of FBET, MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.8 • 2.5 • 3 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30101 TS IM TA-3232 No.6912-1/5 2SA2039 / 2SC5706 Specifications Note*( ) : 2SA2039 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--50)80 V Collector-to-Emitter Voltage VCES (--50)80 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V (--)5 A (--)7.5 A Collector Current IC ICP IB Collector Current (Pulse) Base Current Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C (--)1.2 A 0.8 W 15 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE DC Current Gain Gain-Bandwidth Product fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Conditions VCE=(--)2V, IC=(--)500mA Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)CEO IC=(--)100µA, RBE=0 IC=(--)1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0 See specified test circuit. Storage Time tf Unit (--)1 µA (--)1 µA 560 MHz (24)15 IC=(--)1A, IB=(--)50mA IC=(--)2A, IB=(--)100mA Collector-to-Emitter Breakdown Voltage max (360)400 VCB=(--)10V, f=1MHz V(BR)CBO Fall Time 200 VCE=(--)10V, IC=(--)500mA Collector-to-Base Breakdown Voltage ton tstg typ VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 IC=(--)2A, IB=(--)100mA IC=(--)10µA, IE=0 Turn-On Time Ratings min pF (--115)90 (--195)135 mV (--255)160 (--430)240 mV (--)0.89 (--)1.2 V (--50)80 V (--50)80 V (--)50 V (--)6 V (30)35 ns See specified test circuit. (230)300 ns See specified test circuit. (15)20 ns Swicthing Time Test Circuit PW=20µs D.C.≤1% IB1 IB2 OUTPUT INPUT VR10 50Ω RB + 100µF VBE= --5V 25Ω + 470µF VCC=25V 10IB1= --10IB2= IC=1A For PNP, the polarity is reversed. No.6912-2/5 2SA2039 / 2SC5706 IC -- VCE --5 IC -- VCE 5 2SA2039 2SC5706 A m --90 A 0m 0 --1 --2 --40mA A --30m --20mA --10mA --5mA IB=0 A 2 10mA 5mA --0.8 --1.0 --1.2 Collector-to-Emitter Voltage, VCE -- V 0 --2.5 --2.0 Ta=7 5 --1.0 --0.5 25°C --25° C °C --1.5 --0.2 --0.4 --0.6 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V 2.0 1.5 1.0 7 5 3 5 7 --1.0 2 3 Collector Current, IC -- A 2 --1000 7 5 3 2 --100 7 5 C 75° Ta= °C --25 3 --25°C 100 7 5 2 3 °C 25 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 1.4 IT00155 Ta=75°C 5 7 10 IT00157 VCE(sat) -- IC 1000 2SA2039 IC / IB=20 1.2 25°C 10 0.01 5 7 --10 IT00156 VCE(sat) -- IC --10000 7 5 1.0 2SC5706 VCE=2V 2 2 2 0.8 3 3 5 7 --0.1 0.6 hFE -- IC 5 2 3 0.4 7 3 2 0.2 Base-to-Emitter Voltage, VBE -- V DC Current Gain, hFE Ta=75°C 25°C --25°C 100 10 --0.01 0 IT00154 2SA2039 VCE= --2V 5 2 2.5 1000 7 3 3.0 0 --1.4 hFE -- IC 1000 1.4 IT02975 2SC5706 VCE=2V 0.5 --0.8 1.2 3.5 0 0 1.0 IC -- VBE 4.0 Collector Current, IC -- A --3.0 0.8 Collector-to-Emitter Voltage, VCE -- V 2SA2039 VCE= --2V --3.5 0.4 IT02974 IC -- VBE --4.0 IB=0 0 --1.4 2SC5706 IC / IB=20 7 5 3 2 100 7 5 75 = Ta 3 °C °C --0.4 Ta=7 5°C 25°C --25°C 0 Collector Current, IC -- A 20mA C 5° 25 0 DC Current Gain, hFE 3 1 --1 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 60mA 50mA 40mA 30mA 90m A -- --60m A --70m 4 A A 80m A -- --3 50mA 100m --4 Collector Current, IC -- A Collector Current, IC -- A 80m 70mA --2 2 2 --10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT02976 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT02978 No.6912-3/5 2SA2039 / 2SC5706 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 --1000 7 5 3 2 5°C 5°C --2 7 Ta= --100 7 5 3 2 --10 --0.01 C 25° 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT02977 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 5 3 2 Ta= --25°C 7 75°C 25°C 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5°C 7 Ta= 100 7 5 5 --2 °C 3 °C 25 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT02979 Collector Current, IC -- A VBE(sat) -- IC 2SC5706 IC / IB=50 7 5 3 2 1.0 Ta= --25°C 7 75°C 5 25°C 3 0.1 0.01 5 7 --10 IT00162 Collector Current, IC -- A 2 3 5 7 0.1 2SA2039 f=1MHz 100 7 5 3 2 10 7 5 5 7 1.0 2 3 5 7 10 IT00163 2SC5706 f=1MHz 3 Output Capacitance, Cob -- pF 2 3 Cob -- VCB 5 3 2 Collector Current, IC -- A Cob -- VCB 5 Output Capacitance, Cob -- pF 3 2 2 --0.1 --0.01 2 100 7 5 3 2 10 7 5 3 2 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 --100 5 7 0.1 3 2 100 7 5 3 2 10 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT00165 f T -- IC 2SC5706 VCE=10V 7 Gain-Bandwidth Product, f T -- MHz 5 3 1000 2SA2039 VCE= --10V 7 2 Collector-to-Base Voltage, VCB -- V IT00164 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 1000 7 5 10 2SA2039 IC / IB=50 5 3 2 10 0.01 VBE(sat) -- IC --1.0 2SC5706 IC / IB=50 7 5 2 Collector Current, IC -- A --10 VCE(sat) -- IC 10000 2SA2039 IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --10000 7 5 5 3 2 100 7 5 3 2 10 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT00166 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT00167 No.6912-4/5 2SA2039 / 2SC5706 ASO 2 Collector Dissipation, PC -- W Collector Current, IC -- A 0.1 7 5 s 3 2 0µ 1.0 7 5 0.9 10 10ms 1ms 50 0µ DC IC=5A s op er ati DC on (T op c= era 25 tio °C n( Ta ) =2 5° C) 3 2 2SA2039 / 2SC5706 100ms ICP=7.5A 10 7 5 2SA2039 / 2SC5706 Tc=25°C Single Puls For PNP, the minus sign(--)is omitted 3 2 0.01 0.1 2 3 5 7 1.0 2 3 PC -- Ta 1.0 0.8 0.7 0.6 No he at 0.5 sin k 0.4 0.3 0.2 0.1 0 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT02980 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT02981 PC -- Tc 18 Collector Dissipation, PC -- W 2SA2039 / 2SC5706 16 15 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT02982 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2001. Specifications and information herein are subject to change without notice. PS No.6912-5/5