Ordering number:ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Package Dimensions · Adoption of FBET, MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitates miniaturization in end products. unit:mm 2018B [2SA1973/2SC5310] 0.4 0.5 Features 3 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Base 2 : Emitter 3 : Collector SANYO : CP 0.8 1.1 1 0.5 1.5 0 to 0.1 Specifications ( ) : 2SA1973 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)30 V Collector-to-Emitter Voltage VCEO VEBO (–)25 V (–)6 V IC (–)1 A Collector Current (Pulse) ICP (–)3 Base Current (–)200 mA Collector Dissipation IB PC 250 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Emitter-to-Base Voltage Collector Current Mounted on a glass-epoxy board (20×30×1.6mm) A Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(–)20V, IE=0 (–)0.1 µA Emitter Cutoff Current IEBO VEB=(–)3V, IC=0 (–)0.1 µA DC Current Gain hFE VCE=(–)2V, IC=(–)100mA 135* * : The 2SA1973/2SC5310 are classified by 100mA hFE as follows : Rank hFE 5 135 to 400* Continued on next page. 6 270 200 to 400 Marking : 2SA1973 : NS 2SC5310 : NN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60100TS (KOTO) TA-1556 No.5613–1/4 2SA1973/2SC5310 Continued on preceding page. Parameter Symbol Gain-Bandwidth Product fT Cob Output Capacitance typ Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)500mA, IB=(–)25mA Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage V(BR)EBO MHz (32)19 IC=(–)500mA, IB=(–)25mA V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ Unit max 150 VCB=(–)10V, f=1MHz VCE(sat) (–150) IE=(–)10µA, IC=0 pF (–300) mV 100 200 mV (–)0.85 (–)1.2 ton See specified Test Circuit Storage Time tstg See specified Test Circuit tf See specified Test Circuit V (–)30 V (–)25 V (–)6 Turn-ON Time Fall Time min VCE=(–)10V, IC=(–)50mA Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Ratings Conditions V (60)60 ns (350) ns 500 ns (25)25 ns Switching Time Test Circuit IB1 PW=20µs D.C.≤1% INPUT IB2 OUTPUT 1kΩ RL VR + + 50Ω 100µF 470µF VBE=--5V VCC=12V 20IB1= --20IB2= IC=500mA (For PNP, the polarity is reversed.) IC -- VCE Collector Current, IC – A --0.8 --0.6 --6mA --0.4 --4mA --0.2 --2mA --0.4 --0.8 --1.2 4mA 0.4 2mA IB=0 0 0.4 0.8 --600 Ta=7 5°C 25°C --25°C --200 0 1.6 2.0 ITR08235 IC -- VBE 1000 --800 1.2 Collector-to-Emitter Voltage, VCE – V ITR08234 2SA1973 VCE=--2V Pulse Collector Current, IC – mA 0.6 --2.0 IC -- VBE --400 6mA 0 --1.6 Collector-to-Emitter Voltage, VCE – V --1000 0.8 2SC5310 VCE=2V Pulse 800 600 Ta=75 °C 25°C --25°C 0 2SC5310 Pulse 0.2 IB=0 0 IC -- VCE 1.0 2SA1973 Pulse Collector Current, IC – mA Collector Current, IC – A --1.0 400 200 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE – V --1.2 ITR08236 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE – V 1.0 1.2 ITR08237 No.5613–2/4 2SA1973/2SC5310 hFE -- IC 1000 2SA1973 VCE=--2V Pulse 7 2SC5310 VCE=2V Pulse 3 3 Ta=75°C 25°C 2 --25°C DC Current Gain, hFE 5 DC Current Gain, hFE hFE -- IC 5 Ta=75°C 25°C 2 --25°C 100 100 7 7 5 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 3 5 3 2 100 7 5 3 2 2 3 5 7 2 --100 3 5 Collector Current, IC – mA 2 3 5 7 1.0 2 3 ITR08239 f T -- IC 2SC5310 VCE=10V Pulse 5 3 2 100 7 5 3 2 2 10 3 5 Output Capacitance, Cob – pF 5 3 2 7 2 100 3 5 Collector Current, IC – mA 7 1000 ITR08241 Cob -- VCB 100 2SA1973 f=1MHz 10 2SC5310 f=1MHz 7 5 3 2 10 7 --1.0 2 3 5 7 2 --10 Collector-to-Base Voltage, VCB -- V 3 5 7 VCE(sat) -- IC 5 2SA1973 IC / IB=20 Pulse 3 2 --100 7 5 5°C 3 7 Ta= 2 5°C --2 C 25° --10 7 7 --0.01 2 3 1.0 ITR08242 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 7 0.1 7 7 --1000 ITR08240 7 5 5 1000 Cob -- VCB 100 7 3 10 10 --10 --1000 2 Collector Current, IC – A Gain-Bandwidth Product, fT – MHz 2SA1973 VCE=--10V Pulse 7 Output Capacitance, Cob – pF 7 0.01 ITR08238 f T -- IC 1000 Gain-Bandwidth Product, fT – MHz 2 3 2 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V 3 5 ITR08243 VCE(sat) -- IC 2SC5310 IC / IB=20 Pulse 2 100 7 5 °C 75 5 °C --2 5°C = Ta 3 2 2 10 7 5 7 --0.1 2 3 5 Collector Current, IC – A 7 --1.0 2 3 ITR08244 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC – A 7 1.0 2 3 ITR08245 No.5613–3/4 2SA1973/2SC5310 VBE(sat) -- IC 2 --1.0 --25°C 7 Ta=75°C 25°C 5 3 3 5 7 --0.1 2 3 5 Collector Current, IC – A 7 --1.0 2 2 1.0 --25°C 7 Ta=75°C 25°C 5 3 7 0.01 Collector Dissipation, PC – mW s s DC 3 2 ms 0µ 10 1m 1.0 7 5 op era tio 0.1 7 5 n Ta=25°C Single pulse Mounted on a glass-epoxy board (20×30×1.6mm) For PNP, the minus sign (–) is omitted. 2 3 5 7 1.0 2 3 5 7 3 5 7 0.1 2 3 5 Collector Current, IC – A 7 1.0 2 3 ITR08247 PC -- Ta 280 0 =1 PT IC 2 ITR08246 2SA1973 / 2SC5310 ICP 3 2 Collector Current, IC – A 2 ASO 7 5 0.01 7 5 2SC5310 IC / IB=20 Pulse 3 7 --0.01 3 2 VBE(sat) -- IC 3 2SA1973 IC / IB=20 Pulse Base-to-Emitter Saturation Voltage, VBE (sat) – V Base-to-Emitter Saturation Voltage, VBE (sat) – V 3 2SA1785 / 2SC5310 2SC4645 2SA1973 250 240 M ou nt 200 ed on ag las s-e po 160 xy bo ar 120 d (2 0× 30 80 ×1 . 6m m ) 40 0 10 2 Collector-to-Emitter Voltage, VCE – V 3 5 ITR08248 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 ITR08249 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2000. Specifications and information herein are subject to change without notice. PS No.5613–4/4