SANYO 2SC5551F

Ordering number:ENN6328
NPN Epitaxial Planar Silicon Transistor
2SC5551
High-Frequency Medium-Output
Amplifier Applications
Features
Package Dimensions
· High fT : (fT=3.5GHz typ).
· Large current : (IC=300mA).
· Large allowable collector dissipation (1.3W max).
unit:mm
2038A
[2SC5551]
4.5
1.6
0.4
1.0
2.5
4.25max
1.5
0.5
3
1.5
2
1
0.4
3.0
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
40
V
Collector-to-Emitter Voltage
VCEO
VEBO
30
V
IC
300
mA
600
mA
Emitter-to-Base Voltage
Collector Current
Collector Current (pulse)
ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
2
Mounted on a ceramic board (250mm2× 0.8mm)
V
1.3
W
150
˚C
–55 to +150
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=20V, IE=0
1.0
µA
Emitter Cutoff Current
IEBO
5.0
µA
DC Current Gain
hFE1
hFE2
VEB=1V, IC=0
VCE=5V, IC=50mA
90
VCE=5V, IC=300mA
20
270
Continued on next page.
* : The 2SC5551 is classified by 50mA hFE as follows :
Marking
EB
Rank
E
F
hFE
90 to 180
135 to 270
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21000TS (KOTO) TA-2665 No.6328–1/5
2SC5551
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
max
Unit
fT
Cob
VCE=5V, IC=50mA
3.5
Output Capacitance
VCB=10V, f=1MHz
2.9
Reverse Transfer Capacitance
Cre
VCB=10V, f=1MHz
1.5
Collector-to-Emitter Saturation Voltage
VCE(sat)
0.15
0.3
V
Collector-to-Base Saturation Voltage
VBE(sat)
IC=50mA, IB=5mA
IC=50mA, IB=5mA
0.9
1.2
V
Gain-Bandwidth Product
IC -- VCE
500µA
450µA
80
300µA
250µA
200µA
150µA
100µA
20
IB=0
0
4
8
12
Collector-to-Emitter Voltage, VCE – V
Output Capacitance,
Reverse Transfer Capacitance, Cob, Cre – pF
Forward Transfer Gain, S21e – dB
IC / IB=10
2
5
3
2
0.1
7
5
3
2
0.01
1.0
2
3
5
7 10
2
3
5 7 100
2
3
Cob, Cre -- VCB
7
5
Cob
2
Cre
1.0
1.0
3
2
3
5 7 10
3
2
5 7 100
2
3
Collector Current, IC – mA
S21e2 -- IC
5 7 1000
IT01067
VCE=5V
18
Hz
0M
0
2
f=
16
14
12
z
0MH
10
f=50
8
6
4
2
2
3
5
7 10
2
3
5 7 100
2
3
Collector Current, IC – mA
5 7 1000
IT01069
f T -- IC
10
f=1MHz
3
5
0
1.0
5 7 1000
IT01068
Collector Current, IC – A
10
7
20
VCE=5V
7
Gain-Bandwidth Product, fT – GHz
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
7
100
IT01066
VCE(sat) -- IC
1.0
2
10
1.0
20
16
3
2
50µA
0
VCE=5V
5
350µA
40
pF
7
400µA
60
pF
hFE -- IC
1000
DC Current Gain, hFE
Collector Current, IC – mA
100
GHz
4.0
5
3
2
1.0
7
5
3
2
0.1
2
3
5
7
10
2
3
Collector-to-Base Voltage, VCB -- V
5
7
100
IT01070
1.0
2
3
5 7 10
2
3
5 7 100
Collector Current, IC – mA
2
3
5 7 1000
IT01071
No.6328–2/5
2SC5551
ASO
1000
7
ICP=600mA
1.3
DC
Collector Dissipation, PC – W
Collector Current, IC – mA
10
s
1m
IC=300mA
2
m
s
op
era
tio
100
n
7
5
3
2
M
1.2
5
3
PC -- Ta
1.4
Ta=25°C
Single pulse
Mounted on a ceramic board (250mm2×0.8mm)
10
1.0
2
3
5
7
10
2
Collector-to-Emitter Voltage, VCE – V
ou
nt
1.0
ed
on
ac
0.8
er
am
ic
bo
ar
0.6
d
(2
50
0.4
m
m2
×0
.8
m
m
)
0.2
0
3
5
0
20
40
60
80
100
140
120
Ambient Temperature, Ta – ˚C
IT01072
160
IT01073
S Parameters (Common emitter)
VCE=5V, IC=1mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
100
0.941
–101.1
2.373
119.9
0.088
38.7
0.884
–17.8
200
0.859
–141.0
1.425
93.8
0.097
18.3
0.821
–25.2
300
0.829
–158.6
0.990
79.4
0.088
12.0
0.755
–33.8
400
0.831
–169.5
0.845
69.2
0.074
10.7
0.766
–41.9
500
0.840
–178.6
0.715
61.1
0.058
25.2
0.798
–49.9
600
0.816
172.3
0.638
54.7
0.055
51.6
0.790
–58.4
700
0.816
164.9
0.507
49.8
0.064
78.4
0.771
–66.7
800
0.814
157.3
0.466
47.0
0.098
87.3
0.813
–75.0
900
0.800
150.9
0.443
45.7
0.134
90.2
0.792
–82.8
1000
0.804
145.0
0.388
47.3
0.173
92.2
0.782
–90.0
VCE=5V, IC=5mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
100
0.803
–114.9
7.414
115.7
0.068
41.3
0.635
–36.3
200
0.724
–151.3
4.172
93.7
0.076
31.5
0.472
–41.7
300
0.701
–165.9
2.952
82.3
0.078
35.0
0.431
–45.4
400
0.700
–175.1
2.286
73.9
0.082
42.9
0.432
–50.2
500
0.693
177.1
1.857
66.6
0.091
51.9
0.437
–56.6
600
0.689
170.2
1.559
60.0
0.100
58.6
0.443
–63.4
700
0.695
164.3
1.371
54.3
0.117
64.7
0.451
–70.3
800
0.691
158.3
1.174
48.8
0.137
69.1
0.463
–77.3
900
0.693
153.0
1.067
44.5
0.161
71.4
0.479
–84.1
1000
0.705
147.9
0.988
40.9
0.189
72.3
0.496
–90.3
VCE=5V, IC=10mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
100
0.718
–127.2
10.489
111.3
0.059
43.0
0.509
–50.8
200
0.658
–157.9
5.747
92.2
0.069
41.0
0.329
–58.8
300
0.639
–170.4
3.882
82.7
0.079
47.7
0.286
–61.0
400
0.632
–178.7
2.954
75.4
0.092
52.8
0.271
–65.2
500
0.628
174.6
2.405
68.8
0.107
57.4
0.273
–70.5
600
0.627
168.5
2.040
62.8
0.124
60.5
0.280
–76.9
700
0.626
162.9
1.778
57.4
0.143
62.9
0.296
–81.6
800
0.629
157.4
1.571
52.3
0.162
64.7
0.306
–87.9
900
0.631
152.7
1.405
47.9
0.185
64.8
0.318
–93.9
1000
0.633
148.0
1.292
43.7
0.209
64.8
0.339
–98.4
No.6328–3/5
2SC5551
VCE=5V, IC=20mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
100
0.653
–137.8
13.042
107.6
0.051
46.8
0.423
–68.5
200
0.608
–163.6
6.841
91.3
0.067
50.0
0.252
–84.4
300
0.591
–174.4
4.610
83.0
0.083
56.1
0.201
–91.5
400
0.584
178.4
3.504
76.4
0.102
59.2
0.186
–95.7
500
0.580
172.2
2.852
70.5
0.122
61.1
0.186
–100.2
600
0.579
166.7
2.427
65.3
0.144
62.2
0.195
–104.0
700
0.576
161.2
2.100
60.1
0.165
62.4
0.205
–107.4
800
0.576
156.1
1.871
55.5
0.186
62.3
0.215
–111.9
900
0.578
151.6
1.684
51.1
0.209
61.5
0.229
–115.4
1000
0.581
147.2
1.542
47.2
0.231
60.4
0.241
–118.7
VCE=5V, IC=50mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
100
0.611
–147.0
14.987
104.6
0.047
51.3
0.371
–88.8
200
0.573
–168.9
7.700
90.4
0.066
57.3
0.241
–115.9
300
0.556
–177.8
5.174
83.1
0.088
61.8
0.205
–128.4
400
0.551
175.7
3.932
77.4
0.111
63.4
0.192
–135.3
500
0.545
169.9
3.202
72.0
0.136
63.8
0.190
–138.5
600
0.542
164.5
2.710
67.1
0.160
63.3
0.195
–140.7
700
0.540
159.3
2.347
62.7
0.184
62.3
0.200
–142.5
800
0.537
154.2
2.096
58.4
0.207
61.1
0.207
–144.8
900
0.540
149.9
1.882
54.4
0.230
59.4
0.215
–146.8
1000
0.541
145.6
1.729
50.5
0.254
57.9
0.223
–148.4
VCE=5V, IC=100mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
100
0.606
–159.9
15.141
100.1
0.046
50.9
0.369
–102.2
200
0.572
–174.1
7.687
88.9
0.066
59.1
0.254
–129.7
300
0.558
179.3
5.186
82.6
0.090
63.0
0.223
–142.0
400
0.551
174.1
3.952
77.1
0.116
64.3
0.213
–148.5
500
0.542
168.6
3.229
72.1
0.141
64.4
0.210
–151.5
600
0.536
163.0
2.738
67.4
0.167
63.3
0.213
–153.0
700
0.531
157.4
2.375
62.6
0.192
62.0
0.219
–154.5
800
0.528
152.2
2.114
58.5
0.215
60.3
0.226
–156.5
900
0.529
147.7
1.900
54.8
0.239
58.5
0.234
–158.6
1000
0.530
143.5
1.737
51.1
0.262
57.0
0.239
–160.3
No.6328–4/5
2SC5551
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2000. Specifications and information herein are subject
to change without notice.
PS No.6328–5/5