Ordering number:ENN6321 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2014/2SC5567 DC/DC Converter Applications Applications Package Dimensions · Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2163 Features [2SA2014/2SC5567] · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. 4.5 1.6 3 2 2.5 4.25max 1.0 1.5 1 0.4 0.5 0.4 1.5 3.0 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) 0.75 Specifications ( ) : 2SA2014 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)15 V Collector-to-Emitter Voltage VCEO VEBO (–)15 V (–)5 V IC (–)9 A ICP (–)12 A IB (–)1.2 A 1.3 W Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Mounted on a ceramic board (250mm2×0.8mm) 3.5 W 150 ˚C –55 to +150 ˚C Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(–)12V, IE=0 (–)0.1 µA Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 (–)0.1 µA DC Current Gain hFE VCE=(–)2V, IC=(–)500mA fT VCE=(–)2V, IC=(–)500mA Gain-Bandwidth Product Output Capacitance Cob 200 VCB=(–)10V, f=1MHz 560 (220) MHz 280 MHz (90)50 Marking : 2SA2014 : AU 2SC5567 : FD pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21000TS (KOTO) TA-2598 No.6321–1/5 2SA2014/2SC5567 Continued on preceding page. Parameter Symbol Ratings Conditions min IC=(–)3A, IB=(–)60mA Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)4.5A, IB=(–)90mA Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage IC=(–)3A, IB=(–)60mA V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time V(BR)EBO ton Storage Time tstg See specified Test Circuit tf See specified Test Circuit Fall Time IE=(–)10µA, IC=0 Unit typ max (–110) (–170) mV 120 180 mV (–160) (–240) mV 180 280 mV (–)0.85 (–)1.2 V (–)15 V (–)15 V (–)5 V 30 ns (120) ns 180 ns (14)25 ns See specified Test Circuit Switching Time Test Circuit IB1 PW=20µs D.C.≤1% (For PNP, the polarity is reversed.) IB2 OUTPUT INPUT RB VR RL + + 50Ω 100µF 470µF VBE=--5V VCC=5V 20IB1= --20IB2= IC=3A IC -- VCE Collector Current, IC – A --7 A --50mA m 0 10 -- --5 --40mA --30mA --4 --20mA --3 --2 80m A 7 70mA 60mA 50mA 6 40mA 90mA 8 A A --80m m 0 --7 A --60mA 2SC5567 0m --90mA --8 --6 IC -- VCE 9 10 2SA2014 Collector Current, IC – A --9 30mA 5 4 20mA 3 10mA 2 --10mA --1 1 IB=0 --0.1 --0.2 --0.3 --0.4 Collector-to-Emitter Voltage, VCE – V 25°C --5 --4 °C --3 --2 --0.2 --0.4 --0.6 --25°C --1 --0.8 0.2 --1.0 --1.2 --1.4 IT00172 0.4 0.5 IT00171 2SC5567 VCE=2V 8 7 6 25°C 5 4 3 2 1 Base-to-Emitter Voltage, VBE – V 0.3 IC -- VBE 9 Collector Current, IC – A --6 Ta=7 5 Collector Current, IC – A --7 0.1 Collector-to-Emitter Voltage, VCE – V IT00170 2SA2014 VCE=--2V --8 0 0 0 IC -- VBE --9 IB=0 0 --0.5 0 0 0.2 0.4 0.6 --25° C 0 Ta=7 5°C 0 0.8 1.0 Base-to-Emitter Voltage, VBE – V 1.2 1.4 IT00173 No.6321–2/5 2SA2014/2SC5567 hFE -- IC 1000 2SA2014 VCE=--2V 7 2 25°C --25°C 100 7 5 2 3 5 7 --1.0 2 5 5 3 2 --100 7 °C 75 = Ta 3 25°C C 5° --2 2 --10 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A 7 5 3 2 --100 5°C =7 Ta 5 3 25°C 5°C --2 2 --10 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A 7 5 3 2 --1000 Ta=--25°C 7 5 75°C 25°C 3 2 --100 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 2 3 5 7 --10 IT00180 2 3 5 7 10 IT00175 VCE(sat) -- IC 2SC5567 IC / IB=20 3 2 100 7 C 5° =7 a T C 5° --2 5 3 2 25°C 10 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT00178 VCE(sat) -- IC 2SC5567 IC / IB=50 5 3 2 100 C 5° =7 a T C 5° --2 7 5 3 25°C 2 10 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC – A 5 7 10 IT00179 VBE(sat) -- IC 10000 2SA2014 IC / IB=50 5 7 1.0 7 5 7 --10 IT00177 VBE(sat) -- IC --10000 3 Collector Current, IC – A 2SC5567 IC / IB=50 7 Base-to-Emitter Saturation Voltage, VBE (sat) – mV --0.01 3 2 Collector Current, IC – A 5 7 5 0.01 7 5 2 5 7 0.1 1000 2SA2014 IC / IB=50 7 3 7 5 7 --10 IT00176 VCE(sat) -- IC --1000 2 1000 2SA2014 IC / IB=20 5 10 0.01 5 7 --10 IT00174 VCE(sat) -- IC 7 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 3 Collector Current, IC – A Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 5 7 --0.1 25°C 7 2 3 --25°C 100 3 --1000 Base-to-Emitter Saturation Voltage, VBE (sat) – mV 2 2 2 Ta=75°C 3 3 10 --0.01 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 5 DC Current Gain, hFE 3 Ta=75°C 2SC5567 VCE=2V 7 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV DC Current Gain, hFE 5 hFE -- IC 1000 5 3 2 1000 Ta=--25°C 7 75°C 5 25°C 3 2 100 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC – A 2 3 5 7 10 IT00181 No.6321–3/5 2SA2014/2SC5567 Cob -- VCB 3 2 100 7 5 3 2 10 7 5 2 3 5 7 2 --10 Collector-to-Base Voltage, VCB -- V Gain-Bandwidth Product, fT – MHz 100 7 5 3 2 10 7 5 2SA2014 VCE=--2V 3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 7 2 10 3 IT00183 2SC5567 VCE=2V 3 2 100 7 5 3 2 10 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT00185 Collector Current, IC – A PC -- Ta 1.5 2SA2014 / 2SC5567 10 s 0µ 1.0 7 5 10 op Collector Dissipation, PC – W DC s 0µ 10 3 2 1.3 50 1m s ms IC 0m era s tio n 3 2 2SA2014 / 2SC5567 Tc=25°C Single pulse For PNP, the minus sign (–) is omitted 0.01 0.1 5 f T -- IC 1.0 0.01 ASO ICP 10 7 5 3 1000 7 5 5 7 --10 IT00184 Collector Current, IC – A 3 2 2 Collector-to-Base Voltage, VCB -- V IT00182 f T -- IC 1000 7 5 Collector Current, IC – A 3 2 1.0 1.0 3 Gain-Bandwidth Product, fT – MHz 1.0 --1.0 3 2 2SC5567 f=1MHz 3 2 3 2 0.1 7 5 Cob -- VCB 1000 7 5 2SA2014 f=1MHz Output Capacitance, Cob – pF Output Capacitance, Cob – pF 1000 7 5 2 3 5 7 1.0 2 3 M 1.0 ou nt ed on ac er am ic 0.5 bo ar d (2 50 m m2 ×0 .8 m m ) 0 5 7 2 10 Collector-to-Emitter Voltage, VCE – V 3 IT00186 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 IT00187 PC -- Tc 4.0 2SA2014 / 2SC5567 Collector Dissipation, PC – W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc – ˚C 140 160 IT01871 No.6321–4/5 2SA2014/2SC5567 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice. PS No.6321–5/5