Ordering number:ENN6367 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2022/2SC5610 DC/DC Converter Applications Applications Package Dimensions · Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2041A Features [2SA2022/2SC5610] · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · High allowable power dissipation. 4.5 2.8 3.5 7.2 10.0 5.6 18.1 16.0 3.2 2.4 14.0 1.6 1.2 0.7 0.75 1 2 2.55 2.4 Specifications 2.55 ( ) : 2SA2022 Absolute Maximum Ratings at Ta = 25˚C Parameter 1 : Base 2 : Collector 3 : Emitter SANYO : TO220ML 3 2.55 Symbol 2.55 Conditions Ratings Unit Collector-to-Base Voltage VCBO (–50)60 V Collector-to-Emitter Voltage VCEO VEBO (–)50 V (–)6 V IC (–)7 A ICP (–)10 A IB (–)1.2 A 2 W Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 18 W 150 ˚C –55 to +150 ˚C Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(–)40V, IE=0 (–)0.1 µA Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 (–)0.1 µA DC Current Gain hFE VCE=(–)2V, IC=(–)1A Gain-Bandwidth Product Output Capacitance fT Cob 150 VCE=(–)10V, IC=(–)500mA VCB=(–)10V, f=1MHz 300 (290) MHz 330 MHz (50)28 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21000TS (KOTO) TA-2470 No.6367–1/5 2SA2022/2SC5610 Continued on preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)2.5A, IB=(–)125mA Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)2.5A, IB=(–)125mA Collector-to-Base Breakdown Voltage V(BR)CBO IC=(–)10µA, IE=0 Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO IE=(–)10µA, IC=0 Emitter-to-Base Breakdown Voltage min Unit typ max (–150) (–300) mV 130 260 mV (–)0.85 (–)1.2 V (–50) V 60 V (–)50 V (–)6 Turn-ON Time ton See specified Test Circuit Storage Time tstg See specified Test Circuit tf See specified Test Circuit Fall Time Ratings Conditions V 30 ns (250) ns 300 ns 15 ns Switching Time Test Circuit IB1 PW=20µs D.C.≤1% (For PNP, the polarity is reversed.) IB2 OUTPUT INPUT RB VR RL + + 50Ω 100µF 470µF VBE=--5V VCC=20V 10IB1= --10IB2= IC=2A --20 0mA --3 --20mA --10mA --2 --5mA --1 IB=0 0 0 --0.4 --0.8 --1.2 --1.6 Collector-to-Emitter Voltage, VCE – V IC -- VBE --2 25°C --25°C C --3 1 40mA 20mA 3 2 10mA 1 5mA IB=0 0.4 0.8 1.2 1.6 2.0 IT01353 IC -- VBE 2SC5610 VCE=2V 6 --4 60mA 60mA 4 7 --5 80mA 100mA Collector-to-Emitter Voltage, VCE – V 2SA2022 VCE=--2V Ta=7 5° Collector Current, IC – A --6 5 IT01345 Collector Current, IC – A --7 180mA 0 0 --2.0 mA 120 A 140m 5 4 3 Ta=7 5°C 25°C --25°C --4 --40mA 6 IC -- VCE 2SC5610 A --5 A --80m A m 0 --6 Collector Current, IC – A --100mA --120mA --140mA --160mA --180mA --6 Collector Current, IC – A 7 2SA2022 200m IC -- VCE --7 2 1 --1 0 0 0 --0.2 --0.4 --0.6 --0.8 Base-to-Emitter Voltage, VBE – V --1.0 --1.2 IT01346 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE – V 1.0 1.2 IT01354 No.6367–2/5 2SA2022/2SC5610 hFE -- IC 1000 2SA2022 VCE=--2V 7 5 2 DC Current Gain, hFE Ta=75°C 3 25°C --25°C 100 5 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A 10 0.01 5 7 --10 IT01347 VCE(sat) -- IC 3 2 = Ta 5 5°C --2 3 25°C 2 2 3 5 7 1.0 2 3 Collector Current, IC – A 5 7 10 IT01355 VCE(sat) -- IC 2SC5610 IC / IB=20 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A 5 7 --10 IT01348 Collector-to-Emitter Saturation Voltage, VCE (sat) – V --1.0 7 5 3 2 °C =75 --0.1 7 5 Ta 3 2 2 3 5 7 --0.1 2 3 °C --25 5 7 --1.0 25°C 2 3 Collector Current, IC – A 5 7 --10 IT01349 3 2 Ta=--25°C 7 25°C 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 3 5 7 0.1 2 3 5 7 --10 IT01350 2 3 25°C C 5° --2 5 7 1.0 2 3 5 7 10 IT01356 VCE(sat) -- IC 2SC5610 IC / IB=50 3 2 1.0 7 5 3 2 0.1 7 5 7 Ta= 5°C --25 3 25°C °C 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT01357 VBE(sat) -- IC 2SC5610 IC / IB=20 7 Base-to-Emitter Saturation Voltage, VBE (sat) – V 5 75°C 2 10 7 5 2 °C 75 Collector Current, IC – A 2SA2022 IC / IB=20 --1.0 3 0.01 0.01 VBE(sat) -- IC --10 = Ta 10 7 5 2SA2022 IC / IB=50 3 2 5 Collector Current, IC – A VCE(sat) -- IC --10 7 5 7 10 0.01 --10 --0.1 --0.01 5 7 0.1 100 °C 75 7 --0.01 --0.01 3 7 5 --0.01 2 1000 2SA2022 IC / IB=20 --100 Collector-to-Emitter Saturation Voltage, VCE (sat) – V --25°C 2 10 --0.01 Base-to-Emitter Saturation Voltage, VBE (sat) – V 2 3 7 25°C Ta=75°C 3 100 7 --1000 2SC5610 VCE=2V 7 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV DC Current Gain, hFE 5 hFE -- IC 1000 5 3 2 1.0 Ta=--25°C 7 5 25°C 75°C 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC – A 2 3 5 7 10 IT01358 No.6367–3/5 2SA2022/2SC5610 Cob -- VCB 5 2SA2022 f=1MHz 100 7 5 3 2 10 7 2 100 7 5 3 2 10 7 5 5 3 3 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V 3 5 3 2 100 7 5 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC – A 7 2 10 IT01359 f T -- IC 2SC5610 VCE=2V 7 5 3 2 100 3 7 5 3 5 5 7 0.01 IT01352 ASO 2 10µs 10 1ms s 0µ IC s 0µ 50 era op 1.0 7 5 ms DC 3 2 tio n 3 2 2SA2022 / 2SC5610 Tc=25°C Single pulse For PNP, the minus sign (–) is omitted 2 3 5 7 1.0 2 3 5 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC – A 2 3 5 IT01360 PC -- Ta 2SA2022 / 2SC5610 2.0 Collector Dissipation, PC – W 10 7 5 2 2.2 100ms ICP 10 Collector Current, IC – A 5 2 5 7 --0.01 3 2 3 1000 2 0.1 7 5 2 Collector-to-Base Voltage, VCB -- V IT01351 2SA2022 VCE=--2V 7 2 1.0 5 f T -- IC 1000 Gain-Bandwidth Product, fT – MHz Output Capacitance, Cob – pF 2 2 --1.0 2SC5610 f=1MHz 3 Gain-Bandwidth Product, fT – MHz Output Capacitance, Cob – pF 3 Cob -- VCB 5 1.8 1.6 No 1.4 1.2 he at 1.0 sin k 0.8 0.6 0.4 0.2 0 7 10 2 3 5 Collector-to-Emitter Voltage, VCE – V 7 100 IT01361 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 IT01362 PC -- Tc 22 2SA2022 / 2SC5610 Collector Dissipation, PC – W 20 18 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 Case Temperature, Tc – ˚C 140 160 IT01870 No.6367–4/5 2SA2022/2SC5610 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice. PS No.6367–5/5