2SC5994 Ordering number : ENN8035 2SC5994 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 100 V Collector-to-Emitter Voltage VCES 100 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 6 V IC 2 A Collector Current Collector Current (Pulse) Base Current ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 4 A 400 mA Mounted on a ceramic board (450mm2✕0.8m) 1.3 W Tc=25°C 3.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol Conditions ICBO IEBO VCB=50V, IE=0 VEB=4V, IC=0 hFE1 hFE2 VCE=2V, IC=100mA VCE=2V, IC=1.5A Ratings min typ Unit max 200 1 µA 1 µA 560 40 Marking : FJ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21505EA TS IM TB-00001137 No.8035-1/4 2SC5994 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) V(BR)CBO Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Fall Time min typ Unit max VCE=10V, IC=300mA VCB=10V, f=1MHz 420 MHz IC=1A, IB=50mA IC=1A, IB=50mA 135 300 0.9 1.2 9 IC=10µA, IE=0 IC=100µA, RBE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 ton tstg tf Storage Time Ratings Conditions pF mV V 100 V 100 V 50 V 6 V See specified Test Circuit. 30 ns See specified Test Circuit. 330 ns See specified Test Circuit. 40 ns Package Dimensions unit : mm 2038B Switching Time Test Circuit IB1 PW=20µs D.C.≤1% 4.5 1.6 OUTPUT IB2 INPUT 1.5 VR RB RL 1 2 + 470µF + 100µF 4.0 1.0 2.5 50Ω VBE= --5V 3 0.4 0.4 VCC=25V IC=10IB1= --10IB2=700mA 0.5 1.5 3.0 0.75 1 : Base 2 : Collector 3 : Emitter SANYO : PCP IC -- VCE VCE=2V 1.8 Collector Current, IC -- A 50mA 10mA 1.2 5mA 1.0 3mA 0.8 2mA 0.6 1mA 0.4 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.2 IB=0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Collector-to-Emitter Voltage, VCE -- V 1.8 2.0 IT07587 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 --25°C 15mA 1.6 1.4 IC -- VBE 2.0 20mA 5°C 25°C A 30m 1.8 Collector Current, IC -- A 25mA Ta= 7 2.0 0.8 0.9 Base-to-Emitter Voltage, VBE -- V 1.0 1.1 IT07588 No.8035-2/4 2SC5994 hFE -- IC 1000 VCE=10V DC Current Gain, hFE Gain-Bandwidth Product, f T -- MHz 7 Ta=75°C 5 25°C --25°C 3 2 100 7 5 0.01 2 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC -- A 7 5 3 2 100 7 5 3 0.01 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 2 10 7 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5°C =7 Ta 5 3 C 5° --2 25° C 2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A 0.1 7 °C 75 5 = Ta 3 C 5° --2 °C 2 25 2 3 5 7 0.1 2 3 5 7 1.0 100 s µs ms 0µ DC 50 s op 3 s era tio n 2 0.1 7 5 3 2 0.01 0.1 3 5 7 1.0 25°C 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 IT07594 PC -- Ta 1.3 M ou nt 1.0 ed on ac er 0.8 am ic bo ar 0.6 d (4 50 m 0.4 m2 ✕ 0. 8m m ) 0.2 Tc=25°C Single Pulse 2 75°C 7 1.2 1m 0m 1.0 7 5 Ta= --25°C Collector Current, IC -- A <10µs 10 1.0 1.4 10 3 2 3 0.01 3 ASO IC=2A 2 IT07592 VBE(sat) -- IC IT07593 ICP=4A 3 IT07590 IC / IB=20 0.1 7 2 1.0 Collector Current, IC -- A Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 2 3 2 2 3 3 IT07591 3 3 2 IC / IB=50 5 10 7 5 7 0.1 IC / IB=20 0.01 0.01 7 VCE(sat) -- IC 7 Collector Current, IC -- A 5 5 VCE(sat) -- IC 5 3 2 3 Collector Current, IC -- A f=1MHz 5 0.1 2 IT07589 Cob -- VCB 5 f T -- IC 1000 VCE=2V 0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT07595 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07596 No.8035-3/4 2SC5994 PC -- Tc 4.0 Collector Dissipation, PC -- W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT07597 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. PS No.8035-4/4