Ordering number : ENN7127 2SJ522 P-Channel Silicon MOSFET 2SJ522 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm 2093A [2SJ522] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 11.0 9.4 20.9 1.2 0.8 0.4 2 3 1 : Gate 2 : Drain 3 : Source 2.7 1 2.55 2.55 SANYO : SMP unit : mm 2090A [2SJ522] 4.5 1.3 3 1.2 2.55 2.7 2.55 2 2.55 0 to 0.3 0.4 1.35 1 0.8 1.4 1.5max 8.8 0.8 10.2 9.9 3.0 • 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80902 TS IM TA-100038 No.7127-1/4 2SJ522 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --400 V Gate-to-Source Voltage VGSS ±30 V ID IDP --5 A Drain Current (Pulse) --20 A Allowable Power Dissipation PD 1.65 W Channel Temperature Storage Temperature Drain Current (DC) Tc=25°C 70 W Tch 150 °C Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Conditions Ratings min V(BR)DSS IDSS ID=--10mA, VGS=0 VDS=--320V, VGS=0 IGSS VGS(off) VGS=±30V, VDS=0 VDS=--10V, ID=--1mA --2.0 yfs RDS(on) VDS=--10V, ID=--2.5A 1.3 Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance typ max --400 Unit V --1.0 mA ±100 nA --3.0 V 2.0 Ω 2.6 Input Capacitance Ciss 1500 pF Output Capacitance Coss VDS=--20V, f=1MHz 240 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 90 pF Turn-ON Delay Time td(on) See specified Test Circuit. 25 ns Rise Time tr td(off) See specified Test Circuit. 70 ns See specified Test Circuit. 340 ns tf See specified Test Circuit. 150 ns Turn-OFF Delay Time Fall Time Diode Forward Voltage VSD IS=--5A, VGS=0 1.5 S ID=--2.5A, VGS=--10V VDS=--20V, f=1MHz -1.5 - V Marking : J522 *(Note) Be careful in handling the 2SJ522 because it has no protection diode between gate and source. Switching Time Test Circuit VDD= --200V VIN ID= --2.5A RL=80Ω 0V --10V VOUT D VIN PW=10µs D.C.≤1% G P.G 50Ω 2SJ522 S No.7127-2/4 2SJ522 ID -- VDS --8 ID -- VGS --8 Tc= --25°C VDS= --10V 0V 10. -- V --6.0 --6 Drain Current, ID -- A --7 --5.0V --5 --4 --4.5V --3 --2 --4.0V --1 VGS= --3.5V 25°C --6 Drain Current, ID -- A --7 --5 75°C --4 --3 --2 --1 0 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 Drain-to-Source Voltage, VDS -- V 0 --20 --5.0 --7.5 --10.0 --12.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 3.5 --2.5 IT03697 --15.0 IT03698 RDS(on) -- Tc 3.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Tc=25°C 3.0 ID= --5A 2.5 --2.5A --1A 2.0 1.5 1.0 --2 --4 --6 --8 --10 --12 Gate-to-Source Voltage, VGS -- V yfs -- ID 5 2.5 2.0 V -10 =S 0V VG --2 1.5 1.0 0.5 --50 --14 --25 0 25 50 75 100 Forward Transfer Admitance, yfs -- S VDS= --10V ID= --1mA Cutoff Voltage, VGS(off) -- V 3 2 °C Tc 75 --1.0 ° 25 C °C 7 5 3 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A --2.0 --1.5 --25 0 25 50 75 100 125 Case Temperature, Tc -- °C VGS=0 150 IT03702 Ciss, Coss, Crss -- VDS 10000 f=1MHz 7 5 Ciss, Coss, Crss -- pF 3 3 2 --1.0 7 5 3 2 C --25° Tc= 75 ° C 25°C 3 2 --0.01 --0.2 --2.5 IT03701 --10 7 5 --0.1 7 5 --3.0 --1.0 --50 7 IF -- VSD 3 2 Forward Current, IF -- A 5 150 IT03700 VGS(off) -- Tc --3.5 VDS= --10V -25 =- 125 Case Temperature, Tc -- °C IT03699 2 Ciss 1000 7 5 Coss 3 2 Crss 100 7 5 3 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V --1.2 IT03703 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT03704 No.7127-3/4 2SJ522 Forward Bias A S O 5 IDP= --20A 10µs 10 --10 7 5 0µ ID= --5A 10 DC Operation in this area is limited by RDS(on). 3 2 s 10 ms 0m s op era tio n --0.1 7 5 3 2 Tc=25°C Single pulse --0.01 --1.0 2 3 1.65 1.5 1.0 0.5 0 5 7 --10 2 3 5 7 --100 2 Drain-to-Source Voltage, VDS -- V 3 5 7 IT03705 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT03706 PD -- Tc 80 Allowable Power Dissipation, PD -- W s 1m 3 2 --1.0 7 5 Allowable Power Dissipation, PD -- W Drain Current, ID -- A 3 2 PD -- Ta 2.0 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT03707 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2002. Specifications and information herein are subject to change without notice. PS No.7127-4/4