VISHAY BY527_05

BY527
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
Features
•
•
•
•
•
•
•
Controlled avalanche characteristics
Glass passivated junction
e2
Hermetically sealed package
Low reverse current
High surge current capability
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
949539
Applications
Mechanical Data
General purpose
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
Parts Table
Part
Type differentiation
VR = 800 V; IFAV = 2 A
BY527
Package
SOD-57
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Peak reverse voltage, non
repetitive
IR = 100 µA
Reverse voltage
see electrical characteristics
Peak forward surge current
tp = 10 ms, half sinewave
Repetitive peak forward current
Symbol
Value
Unit
VRSM
1250
V
VR
800
V
IFSM
50
A
A
IFRM
12
Average forward current
ϕ = 180 °
IFAV
2
A
Pulse avalanche peak power
Tj = 175 °C, tp = 20 µs,
half sinus wave
PR
1000
W
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
I(BR)R = 1 A, Tj = 175 °C
ER
20
mJ
i2 * t-rating
i2*t
8
A2*s
Tj = Tstg
- 55 to + 175
°C
Junction and storage
temperature range
Document Number 86007
Rev. 1.6, 14-Apr-05
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BY527
Vishay Semiconductors
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient
Symbol
Value
Unit
l = 10 mm, TL = constant
RthJA
45
K/W
on PC board with spacing 25
mm
RthJA
100
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Reverse current
VF
IF = 10 A
VF
Typ.
Max
Unit
0.9
1.0
V
1.65
V
IR
0.1
1
µA
VR = 800 V, Tj = 100 °C
IR
5
10
µA
IR = 100 µA, tp/T = 0.01, tp = 0.3
ms
Diode capacitance
VR = 4 V, f = 1 MHz
Reverse recovery charge
Min
VR = 800 V
Breakdown voltage
Reverse recovery time
Symbol
IF = 1 A
V(BR)
1250
V
CD
16
pF
µs
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
4
IF = 1 A, di/dt = 5 A/µs, VR = 50 V
trr
4
µs
IF = 1 A, di/dt = 5 A/µs
Qrr
3
µC
120
l
l
100
100
I F - Forward Current ( A )
RthJA Therm. Resist. Junction/Ambient (K/W)
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
80
TL= constant
60
40
20
0
Tj = 175° C
1
Tj = 25°C
0.1
0.01
0.001
0
5
94 9101
10
15
20
25
30
l - Lead Length ( mm )
Figure 1. Typ. Thermal Resistance vs. Lead Length
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2
10
0
16422
0.5
1.0
1.5
2.0
2.5
3.0
V F - Forward V oltage ( V )
Figure 2. Forward Current vs. Forward Voltage
Document Number 86007
Rev. 1.6, 14-Apr-05
BY527
Vishay Semiconductors
PR - Reverse Power Dissipation ( mW )
I FA - Average Forward Current ( A )
2.5
V R = V RRM
half sinewave
R thJA = 45 K/W
l = 10 mm
2.0
1.5
1.0
0.5
R thJA = 100 K/W
PCB: d = 25 mm
0
0
PR -Limit
@100 % VR
150
100
PR -Limit
@80 % VR
50
0
50
75
100
125
150
175
Tj - Junction Temperature ( °C )
16425
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
40
CD - Diode Capacitance ( pF )
1000
V R = VRRM
I R - Reverse Current ( µA )
200
25
Tamb - Ambient Temperature ( ° C )
Figure 3. Max. Average Forward Current vs. Ambient Temperature
100
10
25
50
75
100
125
150
f = 1 MHz
35
30
25
20
15
10
5
0
0.1
175
Tj - Junction T emperature ( ° C )
16424
1
10
100
V R - Reverse Voltage ( V )
16426
Figure 6. Diode Capacitance vs. Reverse Voltage
Figure 4. Reverse Current vs. Junction Temperature
Zthp–Thermal Resistance for PulseCond.(K/W)
V R = VRRM
250
20 40 60 80 100 120 140 160 180
16423
1
300
1000
VRRM = 1000 V, RthJA = 100K/W
100
tp/T = 0.5
10
tp/T = 0.2
Tamb = 25°C
tp/T = 0.1
Tamb = 45°C
tp/T = 0.05
Tamb = 60 °C
tp/T = 0.02
Tamb = 70°C
tp/T = 0.01
Tamb = 100°C
1
10–5
10–4
94 9178
10–3
10–2
10–1
10 0
10 1
tp – Pulse Length ( s )
10 0
10 1
102
I FRM – Repetitive Peak
Forward Current ( A )
Figure 7. Thermal Response
Document Number 86007
Rev. 1.6, 14-Apr-05
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3
BY527
Vishay Semiconductors
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-57
3.6 (0.140)max.
94 9538
Cathode Identification
ISO Method E
0.82 (0.032) max.
26(1.014) min.
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4
4.0 (0.156) max.
26(1.014) min.
Document Number 86007
Rev. 1.6, 14-Apr-05
BY527
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 86007
Rev. 1.6, 14-Apr-05
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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