Ordering number : ENN5412B 2SK2378 N-channel Silicon MOSFET 2SK2378 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Micaless package facilitaing mounting. unit : mm 2063A [2SK2378] 4.5 2.8 10.0 3.5 7.2 • 18.1 16.0 3.2 2.4 14.0 5.6 1.6 1.2 0.7 0.75 1 2 3 2.55 1 : Gate 2 : Drain 3 : Source 2.4 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Conditions Ratings Unit VDSS VGSS ±20 V ID 13 A Drain Current (DC) Drain Current (Pulse) SANYO : TO-220ML 2.55 IDP 200 PW≤10µs, duty cycle≤1% V 52 A 2.0 W Allowable Power Dissipation PD 30 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS V(BR)GSS ID=1mA, VGS=0 IG=±100µA, VDS=0 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) yfs VDS=200V, VGS=0 VGS=±16V, VDS=0 Gate-to-Source Breakdown Voltage Cutoff Voltage Forward Transfer Admittance VDS=10V, ID=1mA VDS=10V, ID=7A Ratings min typ max 200 V ±20 V 1.5 5 Unit 100 µA ±10 µA 2.5 8.5 V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1000 TS IM TA-0174 No.5412-1/4 2SK2378 Continued from preceding page. Ratings Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on) Ciss ID=7A, VGS=10V VDS=20V, f=1MHz 1100 pF Coss VDS=20V, f=1MHz 240 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 95 pF Turn-ON Delay Time td(on) See specified Test Circuit 20 ns Rise Time tr td(off) See specified Test Circuit 50 ns See specified Test Circuit 340 ns tf See specified Test Circuit 140 ns IS=13A, VGS=0 1.0 Input Capacitance Output Capacitance Turn-OFF Delay Time Fall Time Diode Forward Voltage Conditions VSD min typ Unit max 160 210 mΩ 1.5 V Marking : K2378 Switching Time Test Circuit VDD=100V VIN 10V 0V ID=7A RL=14.3Ω VIN D VOUT PW=10µs D.C.≤1% G P.G 2SK2378 50Ω S ID -- VDS 4.0V 15 3.5V 10 3.0V 5 0 4 8 12 16 0.1 0 6 8 10 Gate-to-Source Voltage, VGS -- V 25°C 1 12 14 IT01931 2 3 4 5 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0 0.3 0.2 4 8 IT01929 Tc=25°C ID=7A 2 12 0 RDS(on) -- VGS 0 75°C 16 20 Drain-to-Source Voltage, VDS -- V 0.3 20 25°C 4 2.5V 0 Tc= -- 20 VDS=10V 24 V 5.0 V GS=1 Drain Current, ID -- A 25 ID -- VGS 28 Drain Current, ID -- A 0.0V 30 6 IT01930 RDS(on) -- Tc VGS=10V ID=7A 0.2 0.1 0 --80 --40 0 40 80 Case Temperature, Tc -- °C 120 160 IT01932 No.5412-2/4 2SK2378 |yfs| -- ID 3 10000 7 5 2 3 Ciss, Coss, Crss -- pF VDS=10V 10 7 5 = Tc 3 5°C --2 2 °C 25 75° C 1.0 7 2 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 3 2 Ciss 1000 7 5 Coss 3 2 Crss 100 7 5 0 5 td (off) 2 tf 100 tr 7 5 3 td(on) 2 3 2 5 7 2 1.0 3 5 7 10 Drain Current, ID -- A 2 3 1m s 3 2 DC No he at 1.2 sin k 0.8 0.4 s 0m era s tio n Tc=25°C Single pulse 2 3 5 7 2 10 3 5 7 2 100 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.6 10m 10 op Operation in this area is limited by RDS(on). 1.0 7 5 3 IT01958 PD -- Tc 32 2.0 µs 0µ s 10 7 5 5 30 IT01934 10 IT01935 PD -- Ta 2.4 25 10 ID= 13A 0.1 7 3 20 IDP=52A 3 2 10 2 15 ASO 100 7 5 3 10 Drain-to-Source Voltage, VDS -- V VDD=100V VGS=10V 7 5 5 IT01933 SW Time -- ID 1000 Switching Time, SW Time -- ns f=1MHz 3 2 3 0.1 Allowable Power Dissipation, PD -- W Ciss, Coss, Crss -- VDS 5 Drain Current, ID -- A Forward Transfer Admittance, |yfs| -- S 5 30 28 24 20 16 12 8 4 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01959 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT01960 No.5412-3/4 2SK2378 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2000. Specifications and information herein are subject to change without notice. PS No.5412-4/4