Ordering number : ENN6680 2SK3278 N-Channel Silicon MOSFET 2SK3278 DC/DC Converter Applications Features • • Package Dimensions Low ON-resistance. 4V drive. Ultrahigh-speed switching. unit : mm 2083B [2SK3278] 2.3 5.5 1.5 6.5 5.0 4 0.5 7.0 • 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source 4 : Drain 3 2.3 SANYO : TP 2.3 unit : mm 2092B [2SK3278] 6.5 5.0 4 0.5 1.2 7.0 5.5 1.5 2.3 0.5 2 2.5 1 0.6 0.8 0.85 3 1 : Gate 2 : Drain 3 : Source 4 : Drain 1.2 0 to 0.2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol 2.3 Conditions SANYO : TP-FA 2.3 Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N3000 TS IM TA-2613 No.6680-1/4 2SK3278 Continued from preceding page. Parameter Symbol Drain Current (DC) Conditions Ratings Unit ID Drain Current (Pulse) 15 IDP PW≤10µs, duty cycle≤1% A 45 A 1 W Allowable Power Dissipation PD 15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current IGSS VGS(off) Cutoff Voltage Forward Transfer Admittance Rathings Conditions min typ ID=1mA, VGS=0 Unit max 30 V 1 µA ±10 µA VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA 1.0 2.4 VDS=10V, ID=7A RDS(on)1 RDS(on)2 ID=7A, VGS=10V 27 36 mΩ ID=4A, VGS=4.5V 40 56 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 530 pF Output Capacitance Coss VDS=10V, f=1MHz 170 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 90 pF Turn-ON Delay Time See specified Test Circuit 9 ns Rise Time td(on) tr See specified Test Circuit 130 ns Turn-OFF Delay Time td(off) See specified Test Circuit 40 ns tf Qg See specified Test Circuit 60 ns VDS=10V, VGS=10V, ID=15A 10 nC nC Static Drain-to-Source On-State Resistance Fall Time Total Gate Charge 7 V |yfs| 10 Gate-to-Source Charge Qgs Qgd VDS=10V, VGS=10V, ID=15A VDS=10V, VGS=10V, ID=15A 1.5 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=15A, VGS=0 1.0 S 1.0 nC 1.2 V Marking : K3278 Switching Time Test Circuit VDD=15V VIN 10V 0V ID=7A RL=2.1Ω VIN D VOUT PW=10µs D.C.≤1% G P.G 2SK3278 50Ω S ID -- VDS 3 VGS=2.5V 5 4 3 2 2 1 1 0 25°C 4 6 C 5 7 75° 3 6 Tc= 7 8 .0V --2 5°C Drain Current, ID -- A 8 VDS=10V 9 Drain Current, ID -- A 10.0V 8.0V 9 ID -- VGS 10 4.5 6.0V V 3. 5V 10 0 0 0.2 0.4 0.6 0.8 1.0 Drain-to-Source Voltage, VDS -- V 1.2 IT02555 0 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage, VGS -- V 3.5 4.0 IT02556 No.6680-2/4 2SK3278 RDS(on) -- VGS 60 RDS(on) -- Tc 80 55 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Tc=25°C 7A 50 ID=4A 45 40 35 30 25 20 15 10 70 60 4A I D= , V .5 50 =4 V GS 40 A I =7 10V, D V GS= 30 20 10 5 0 --60 0 10 12 14 16 18 VDS=10V 3 2 10 7 5 C --25° Tc= 75°C 25°C 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 IT02559 3 2 Coss 100 Crss 7 5 3 2 5 10 15 20 25 Drain-to-Source-Voltage, VDS -- V Drain Current, ID -- A 3 5 7 10 IT02563 Switching Time, SW Time -- ns 0.9 1.0 1.1 1.2 IT02560 VGS -- Qg VDS=10V ID=7A 8 6 4 2 100 7 5 Drain Current, ID -- A 2 0.8 1 2 3 4 5 6 7 8 9 3 2 10 11 IT02562 ASO IDP=45A <10µs ID=15A 100µs s 1.0 0.7 10 7 5 3 2 on ati 7 0.6 1m 5 0.5 er 3 0.4 10 1.0 7 5 3 2 2 0.3 s tr 2 1.0 0.1 0.01 7 5 3 2 m td(on) 160 IT02558 op 3 0.1 7 5 3 2 10 10 7 5 140 DC td(off) 120 Total Gate Charge, Qg -- nC 2 3 2 100 1.0 7 5 3 2 0 VDD=15V VGS=10V tf 80 VGS=0 IT02561 3 100 7 5 60 0 30 SW Time -- ID 1000 7 5 40 IF -- VSD 12 10 0 20 Diode Forward Voltage, VSD -- V Gate-to-Source Voltage, VGS -- V Ciss 5 0 10 7 5 3 2 0.001 0.2 f=1MHz 7 Ciss, Coss, Crss -- pF 7 Ciss, Coss, Crss -- VDS 1000 --20 Case Temperature, Tc -- °C |yfs| -- ID 100 7 5 --40 IT02557 Forward Drain Current, IF -- A Forward Transfer Admittance, |yfs| -- S Gate-to-Source Voltage, VGS -- V 20 C 8 25°C 6 --25° 4 75°C 2 Tc= 0 Operation in this area is limited by RDS(on). Tc=25°C Single pulse 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT02564 No.6680-3/4 2SK3278 PD -- Ta PD -- Tc 25 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.2 1.0 0.8 0.6 0.4 0.2 20 15 10 5 0 0 0 20 40 60 80 100 120 Amibient Tamperature, Ta -- °C 140 160 IT02565 0 20 40 60 80 100 120 140 Case Tamperature, Tc -- °C 160 IT02566 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2000. Specifications and information herein are subject to change without notice. PS No.6680-4/4